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TLD6S10AH – TLD6S43AH
Taiwan Semiconductor
4600W, 10V – 43V Surface Mount Transient Voltage Suppressor
FEATURES
● AEC-Q101 qualified
● Junction passivation optimized design technology
● TJ =175 °C capability suitable for high reliability and automotive
requirement
● Moisture sensitivity level: level 1, per J-STD-020
● Compliant to RoHS directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
● Halogen-free according to IEC 61249-2-21
● Meets ISO7637-2 and ISO16750-2 surge specifications
(varied by test conditions)
● Meets IEC 61000-4-2 (Level: 4) / ISO 10605 (Level: L4)
KEY PARAMETERS
PARAMETER VALUE UNIT
VWM
10 – 43
V
VBR
PPPM
(10x1,000μs)
PPPM
(10x10,000μs)
11.1 – 52.8
4600
3600
V
W
W
TJ MAX
Package
175 °C
DO-218AB
APPLICATIONS
● Transient Surge Protection.
● Automotive Load Dump Surge Protection.
MECHANICAL DATA
● Case: DO-218AB
● Molding compound meets UL 94V-0 flammability rating
● Terminal: Matte tin plated leads, solderable per J-STD-002
● Meet JESD 201 class 2 whisker test
● Polarity: Uni-directional
● Weight: 2.682g (approximately)
DO-218AB
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
PARAMETER
SYMBOL
Non-repetitive peak impulse power dissipation with
10/1000μs waveform
Non-repetitive peak impulse power dissipation with
10/10000μs waveform (1)
Steady state power dissipation (Fig.1)
Forward Voltage at IF=100 A (2)
PPPM
PPPM
PD
VF, MAX
Peak forward surge current, 8.3 ms single half sine-wave
IFSM
Junction temperature
TJ
Storage temperature
Notes:
1. Non-repetitive current pulse per Fig. 3.
2. Pulse test with PW=0.3 ms
TSTG
VALUE
4600
3600
6
1.9
600
-55 to +175
-55 to +175
UNIT
W
W
W
V
A
°C
°C
1 Version: C1906

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TLD6S10AH – TLD6S43AH
Taiwan Semiconductor
THERMAL PERFORMANCE
PARAMETER
Junction-to-case thermal resistance per diode
Thermal Performance Note: With ideal heatsink
SYMBOL
RӨJC
TYP
0.85
UNIT
°C/W
ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted)
Part
number
Marking
code
Breakdown
voltage
VBR at IT
(V)
(Note 1)
Test
current
IT
(mA)
Working
stand-off
voltage
VWM
(V)
Min. Max.
Maximum
blocking
leakage
current
IR at VWM
(µA)
(Note 1)
Maximum
blocking
leakage
current
IR at VWM
TJ =175°C
(µA)
(Note 1)
Maximum
peak
impulse
current
IPPM(A)
tp
=10/1000
(μs)
Typical
Maximum temp.
clamping coefficient
voltage of VBR
VC at IPPM
αT
(V) (%/°C)
(Note 2)
TLD6S10AH TLD6S10A 11.1 12.3 5.0 10.0
15
250 271 17.0 0.069
TLD6S11AH TLD6S11A 12.2 13.5 5.0 11.0
10
150 253 18.2 0.072
TLD6S12AH TLD6S12A 13.3 14.7 5.0 12.0
10
150 231 19.9 0.074
TLD6S13AH TLD6S13A 14.4 15.9 5.0 13.0
10
150 214 21.5 0.076
TLD6S14AH TLD6S14A 15.6 17.2 5.0 14.0
10
150 198 23.2 0.078
TLD6S15AH TLD6S15A 16.7 18.5 5.0 15.0
10
150 189 24.4 0.080
TLD6S16AH TLD6S16A 17.8 19.7 5.0 16.0
10
150 177 26.0 0.081
TLD6S17AH TLD6S17A 18.9 20.9 5.0 17.0
10
150 167 27.6 0.082
TLD6S18AH TLD6S18A 20.0 22.1 5.0 18.0
10
150 158 29.2 0.083
TLD6S20AH TLD6S20A 22.2 24.5 5.0 20.0
10
150 142 32.4 0.085
TLD6S22AH TLD6S22A 24.4 26.9 5.0 22.0
10
150 130 35.5 0.086
TLD6S24AH TLD6S24A 26.7 29.5 5.0 24.0
10
150 118 38.9 0.087
TLD6S26AH TLD6S26A 28.9 31.9 5.0 26.0
10
150 106 42.1 0.088
TLD6S28AH TLD6S28A 31.1 34.4 5.0 28.0
10
150 101 45.4 0.089
TLD6S30AH TLD6S30A 33.3 36.8 5.0 30.0
10
150 95 48.4 0.090
TLD6S33AH TLD6S33A 36.7 40.6 5.0 33.0
10
150 86 53.3 0.091
TLD6S36AH TLD6S36A 40.0 44.2 5.0 36.0
10
150 79 58.1 0.091
TLD6S40AH TLD6S40A 44.4 49.1 5.0 40.0
10
150 71 64.5 0.092
TLD6S43AH TLD6S43A 47.8 52.8 5.0 43.0
10
150 66 69.4 0.093
Note:
1. Pulse test with PW=30 ms
2. To calculate VBR vs. junction temperature, use the following formula:
VBR at TJ = VBR at 25 °C x (1 + T x (TJ - 25))
ORDERING INFORMATION
ORDERING CODE
(Note)
PACKAGE
TLD6SxxAH MAG
DO-218AB
Note: "xx" defines voltage from 10V (TLD6S10AH) to 43V (TLD6S43AH)
PACKING
750 / 13” Plastic reel
2 Version: C1906

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TLD6S10AH – TLD6S43AH
Taiwan Semiconductor
CHARACTERISTICS CURVES
(TA = 25°C unless otherwise noted)
Fig.1 Power Derating Curve
8
7
6
5
4
3
2
1
0
0 25 50 75 100 125 150 175
CASE TEMPERATURE (°C)
Fig.3 Clamping Power Pulse Waveform
150
tr=10μs
Pulse width (td) is defined
as the point where the peak
Peak value current decays to 50% of IPPM
100
IPPM
Half value -
IPPM/2
50
Fig.2 Load Dump Power Characteristics
(10ms Exponential Waveform)
6000
5000
4000
3000
2000
1000
0
25
50 75 100 125 150 175
CASE TEMPERATURE (°C)
Fig.4 Reverse Power Capability
10000
td
0
0 5 10 15 20 25 30 35 40
t - TIME (ms)
Fig.5 Typical Transient Thermal Impedance
100
RθJA
10
1
1000
10
PULSE WIDTH (ms)
100
Fig.6 Typical Junction Capacitance
100000
10000
f = 1MHz
Vsig = 50mVP-P
Measured at Zero Bias
0.1 RθJC
0.01
0.01
0.1 1 10
PULSE DURATION (s)
100
1000
Measured at Stand-Off
Voltage VWM
100
10 15 20 25 30 35 40 45
STAND-OFF VOLTAGE, VWM(V)
3 Version: C1906

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PACKAGE OUTLINE DIMENSIONS
DO-218AB
TLD6S10AH – TLD6S43AH
Taiwan Semiconductor
SUGGESTED PAD LAYOUT
MARKING DIAGRAM
P/N
YWW
F
= Marking Code
= Date Code
= Factory Code
4 Version: C1906

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TLD6S10AH – TLD6S43AH
Taiwan Semiconductor
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
assumes no responsibility or liability for any errors or inaccuracies.
Purchasers are solely responsible for the choice, selection, and use of TSC products and TSC assumes no liability
for application assistance or the design of Purchasers’ products.
Information contained herein is intended to provide a product description only. No license, express or implied, to
any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of
sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,
relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose,
merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify TSC for any damages resulting from such improper use or sale.
5 Version: C1906