KZT953.pdf 데이터시트 (총 3 페이지) - 파일 다운로드 KZT953 데이타시트 다운로드

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SMD Type
Transistors
PNP Transistors
FZT953 (KZT953)
Features
Collector Current Capability IC=-5A
Collector Emitter Voltage VCEO=-100V
Complementary to FZT853
SOT-223
6.50±0.2
3.00±0.1
4
123
Unit:mm
2.30 (typ)
4.60 (typ)
0.70±0.1
0.250
Gauge Plane
1.Base
2.Collector
3.Emitter
4.Collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Current - Pulse
Collector Power Dissipation
Junction Temperature
Storage Temperature range
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
TJ
Tstg
Rating
-140
-100
-6
-5
-10
3
150
-55 to 150
Unit
V
A
W
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SMD Type
Transistors
PNP Transistors
FZT953 (KZT953)
Electrical Characteristics Ta = 25
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Collector-emitter cut-off current (R1KΩ)
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
Base-Emitter Turn-On Voltage
DC current gain
(Note.1)
Switching Times
Collector output capacitance
Transition frequency
Note.1: Pulse width=300 us. Duty cycle 2%
Symbol
Test Conditions
VCBO Ic= -100 μAIE=0
VCER Ic= -1uARB1KΩ
VCEO Ic= -10 mAIB=0
VEBO IE= -100μAIC=0
ICBO
VCB= -100 V , IE=0
VCB= -100 V , IE=0 ,Ta = 100
ICER
VCB= -100 V , IE=0
VCB= -100 V , IE=0 ,Ta = 100
IEBO VEB= -6V , IC=0
IC=-100mA, IB=-10mA (Note.1)
IC=-1 A, IB=-100mA (Note.1)
VCE(sat)
IC=-2 A, IB= -200mA (Note.1)
IC=-4 A, IB=-400mA (Note.1)
VBE(sat) IC=-4 A, IB=-400mA (Note.1)
VBE(on) VCE= -1V, IC= -4A (Note.1)
hFE(1) VCE= -1V, IC= -10mA
hFE(2) VCE= -1V, IC= -1A
hFE(3) VCE= -1V, IC= -3 A
hFE(4) VCE= -1V, IC= -4 A
hFE(5) VCE= -1V, IC= -10 A
ton IC=-2A, IB1=-200mA
toff IB2=200mA, VCC=-10V
Cob VCB= -10V, f=1MHz (Note.1)
fT VCE= -10V, IC= -100mA,f=50MHz
Min Typ Max Unit
-140
-140
-100
V
-6
-50 nA
-1 uA
-50 nA
-1 uA
-10 nA
-50
-115
mV
-220
-420
-1.17
-1.16
V
100
100 300
50
30
15
110
ns
460
65 pF
125 MHz
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SMD Type
Transistors
Typical Characterisitics
PNP Transistors
FZT953 (KZT953)
1.6 IC/IB=50
IC/IB=10
1.4
1.2
1.0
0.8
0.6
0.4
0.2
Tamb=25°C
0 0.001
0.01
0.1
1
IC - Collector Current (Amps)
10 20
-55°C
1.6 +25°C
+175°C
1.4
1.2
IC/IB=10
1.0
0.8
0.6
0.4
0.2
0 0.001
0.01
0.1
1
IC - Collector Current (Amps)
10 20
VCE(sat) v IC
+100°C
1.6 +25°C
1.4 -55°C
VCE=1V
300
1.2
1.0 200
0.8
0.6
100
0.4
0.2
0
0.01
0.1
1
10 20
IC - Collector Current (Amps)
hFE v IC
-55°C
1.6
+25°C
+100°C
+175°C
1.4
1.2
1.0
0.8
0.6
0.4
0.2
VCE=1V
0 0.001
0.01
0.1
1
10 20
IC - Collector Current (Amps)
VBE(on) v IC
VCE(sat) v IC
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0 0.001
-55°C
+25°C
+100°C
+175°C
IC/IB=10
0.01
0.1
1
IC - Collector Current (Amps)
10 20
VBE(sat) v IC
Single Pulse Test at Tamb=25°C
10
1
D.C.
1s
100ms
10ms
0.1 1.0ms
0.1ms
0.01
0.1 1 10
VCE - Collector Voltage (Volts)
Safe Operating Area
100
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