70HFR120.pdf 데이터시트 (총 5 페이지) - 파일 다운로드 70HFR120 데이타시트 다운로드

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70HF120/70HFR120
70HF120/70HFR120
Pb
Pb Free Plating Product
70A/1200V Metal Stud Type Rectifier Diodes
Unit:mm(inch)
DO-203AB (DO-5)
POLARITY
AC
NormCal
A
Reverse
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
TEST CONDITIONS
70HF series/70HFR series
10 TO 120
140/160
IF(AV)
IF(RMS)
IFSM
TC
50 Hz
60 Hz
70
140
110
1200
1250
70
110
110
1200
1250
50 Hz
I2t
60 Hz
7100
6450
7100
6450
VRRM
TJ
Range
100 to 1200
-65 to +180
1400/1600
-65 to +150
UNITS
A
°C
A
A
A2s
V
°C
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE
NUMBER
VOLTAGE
CODE
VRRM, MAXIMUM
REPETITIVE PEAK
REVERSE VOLTAGE
V
70HF10/70HFR10
10
100
70HF20/70HFR20
20
200
70HF30/70HFR30
30
300
70HF40/70HFR40
40
400
70HF60/70HFR60
60
600
70HF80/70HFR80
80
800
70HF100/70HFR100
100
1000
70HF120/70HFR120
120
1200
70HF140/70HFR140
140
1400
70HF160/70HFR160
160
1600
VRSM, MAXIMUM
NON-REPETITIVE PEAK
REVERSE VOLTAGE
V
200
300
400
500
720
960
1200
1440
1650
1900
VR(BR), MINIMUM
AVALANCHE VOLTAGE
V
200
300
400
500
725
950
1150
1350
1550
1750
IRRM MAXIMUM
AT TJ = TJ MAXIMUM
mA
15
9
4.5
Rev.08C
© 2006 Thinki Semiconductor Co., Ltd.
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70HF120/70HFR120
FORWARD CONDUCTION
PARAMETER
Maximum average forward current
at case temperature
Maximum RMS forward current
Maximum peak, one cycle forward,
non-repetitive surge current
Maximum I2t for fusing
Maximum I2t for fusing
Low level value of threshold voltage
High level value of threshold voltage
Low level value of forward
slope resistance
High level value of forward
slope resistance
Maximum forward voltage drop
SYMBOL
IF(AV)
IF(RMS)
IFSM
I2t
I2t
VF(TO)1
VF(TO)2
rf1
rf2
VFM
TEST CONDITIONS
180° conduction, half sine wave
t = 10 ms No voltage
t = 8.3 ms reapplied
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
100 % VRRM
reapplied
No voltage
reapplied
Sinusoidal half wave,
initial TJ = TJ maximum
t = 10 ms 100 % VRRM
t = 8.3 ms reapplied
t = 0.1 ms to 10 ms, no voltage reapplied
(16.7 % x x IF(AV) < I < x IF(AV)), TJ = TJ maximum
(I > x IF(AV)), TJ = TJ maximum
70HF-/70HFR-
10 to 120 140/160
70
140 110
110
1200
1250
1000
1050
7100
6450
5000
4550
71 000
0.79
1.00
UNITS
A
°C
A
A
A2s
A2s
V
(16.7 % x x IF(AV) < I < x IF(AV)), TJ = TJ maximum
(I > x IF(AV)), TJ = TJ maximum
2.33
1.53
m
Ipk = 220 A, TJ = 25 °C, tp = 400 μs rectangular wave 1.35 1.46 V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction and
storage temperature range
Maximum thermal resistance,
junction to case
Thermal resistance, case to heatsink
Maximum allowable mounting torque
(+0 %, -10 %)
TJ, TStg
RthJC
RthCS
DC operation
Mounting surface, smooth, flat and greased
Not lubricated thread, tighting on nut (1)
Lubricated thread, tighting on nut (1)
Not lubricated thread, tighting on hexagon (2)
Lubricated thread, tighting on hexagon (2)
Approximate weight
Case style
Notes
(1) Recommended for pass-through holes
(2) Recommended for holed threaded heatsinks
See dimensions - link at the end of datasheet
70HF-/70HFR-
UNITS
10 to 120 140/160
-65 to +180 -65 to +150 °C
0.45
K/W
0.25
3.4 (30)
2.3 (20)
4.2 (37)
N·m
(lbf · in)
3.2 (28)
17 g
0.6 oz.
DO-203AB (DO-5)
RthJC CONDUCTION
CONDUCTION ANGLE
SINUSOIDAL CONDUCTION
RECTANGULAR CONDUCTION
TEST CONDITIONS
180°
0.08
0.06
120°
0.10
0.11
90° 0.13
60° 0.19
0.14
0.20
TJ = TJ maximum
30° 0.30
0.30
Note
• The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC
UNITS
K/W
Rev.08C
© 2006 Thinki Semiconductor Co., Ltd.
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70HF120/70HFR120
180
70HF(R) series (100 V to 1200 V)
RthJC (DC) = 0.45 K/W
170
160 Conduction angle
150
140
130
0
90°
60° 120°
30° 180°
10 20 30 40 50 60 70 80
Average Forward Current (A)
Fig. 1 - Current Ratings Characteristics
180
70HF(R) series (100 V to 1200 V)
170 RthJC (DC) = 0.45 K/W
160
Conduction period
150
140
130
120
0
90°
60°
30°
120°
180°
DC
20 40 60 80 100
Average Forward Current (A)
120
Fig. 2 - Current Ratings Characteristics
150
70HF(R) series (1400 V to 1600 V)
RthJC (DC) = 0.45 K/W
140
130 Conduction angle
120
110
100
0
90°
60° 120°
30° 180°
10 20 30 40 50 60 70 80
Average Forward Current (A)
Fig. 3 - Current Ratings Characteristics
150
70HF(R) series (1400 V to 1600 V)
RthJC (DC) = 0.45 K/W
140
130
Conduction period
120
110
100
90
0
90°
60°
30°
120°
180°
DC
20 40
60 80 100
Average Forward Current (A)
120
Fig. 4 - Current Ratings Characteristics
90
180°
80 120°
90°
70 60°
30°
60
RMS limit
50
40
2
1.5
K/W
K/W
3 K/W
4 K/W
30 Conduction angle
5 K/W
20 70HF(R) series
(100 V to 1200 V)
10 TJ = 180 °C
0
0 10 20 30 40 50 60 70 800 20 40 60 80 100 120 140 160 180
Average Forward Current (A)
Maximum Allowable Ambient Temperature (°C)
Fig. 5 - Forward Power Loss Characteristics
Rev.08C
© 2006 Thinki Semiconductor Co., Ltd.
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70HF120/70HFR120
120
DC
180°
100 120°
90°
60°
80 30°
60
RMS limit
40
20
0
0 20 40
Conduction period
70HF(R) series
(100 V to 1200 V)
T = 180 °C
J
1
0.7
K/W
K/W
1.5 K/W
2 K/W
3 K/W
5 K/W
60 80 100 1200 20 40 60 80 100 120 140 160 180
Average Forward Current (A)
Maximum Allowable Ambient Temperature (°C)
Fig. 6 - Forward Power Loss Characteristics
90
80
70
60
50
40
30
20
10
0
0
180°
120°
90°
60°
30°
RMS limit
Conduction angle
70HF(R) series
(1400 V to 1600 V)
TJ = 150 °C
1 K/W
1.5 K/W
2 K/W
3 K/W
4 K/W
5 K/W
10 20 30 40 50 60 70 80
25 50 75 100 125 150
Average Forward Current (A)
Maximum Allowable Ambient Temperature (°C)
Fig. 7 - Forward Power Loss Characteristics
120
DC
180°
100 120°
90°
60°
80 30°
60
RMS limit
1
0.7
0.5
K/W
K/W
K/W
1.5 K/W
2 K/W
40
Conduction period
3 K/W
5 K/W
70HF(R) series
20 (1400 V to 1600 V)
TJ = 150 °C
0
0 20 40 60 80 100 1020 25 50 75 100 125 150
Average Forward Current (A) Maximum Allowable Ambient Temperature (°C)
Fig. 8 - Forward Power Loss Characteristics
Rev.08C
© 2006 Thinki Semiconductor Co., Ltd.
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70HF120/70HFR120
1100
1000
900
800
At any rated load condition and with rated VRRM
applied following surge.
Initial TJ = TJ max.
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
700
600
500
400 70HF(R) series
300
1
10
Number Of Equal Amplitude
Half Cycle Current Pulses (N)
100
Fig. 9 - Maximum Non-Repetitive Surge Current
1200
1100
1000
900
800
Maximum non repetitive surge current
vs. pulse train duration.
Initial TJ = TJ max.
No voltage reapplied
Rated VRRM reapplied
700
600
500
400
300 70HF(R) series
200
0.01
0.1
1
Pulse Train Duration (s)
Fig. 10 - Maximum Non-Repetitive Surge Current
1000
100
1000
100
TJ = 25 °C
10 TJ = TJ max.
70HF(R) series
1
0 0.5 1 1.5 2 2.5 3
Instantaneous Forward Voltage (V)
Fig. 11 - Forward Voltage Drop Characteristics
10
Steady state value
RthJC = 0.45 K/W
1 (DC operation)
0.1
0.01
70HF(R) series
0.001
0.0001 0.001
0.01
0.1
1
Square Wave Pulse Duration (s)
10
Fig. 12 - Thermal Impedance ZthJC Characteristics
TJ = 25 °C
TJ = TJ max.
10
70HF (R) series
(140 to 160)
1
0 0.5 1 1.5 2 2.5 3 3.5 4
Instantaneous Forward Voltage (V)
Fig. 13 - Forward Voltage Drop Characteristics
Rev.08C
© 2006 Thinki Semiconductor Co., Ltd.
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