MLX92251LSE-AAA pdf, MLX92251LSE-AAA 데이터시트, MLX92251LSE-AAA 데이타시트

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MLX92251LSE-AxA

Dual Hall Effect Latch with Speed & Direction Detection

Features and Benefits

 Operating Voltage from 2.7V to 24V

 Two Integrated Hall plates for Direction

Detection

 Latching Magnetic Characteristics

 Speed & Direction Open-Drain Outputs

 Direction Output updated prior Speed

Output

 Excellent Temperature Stability

 Reverse Supply Voltage Protection

 Output Current Limitation and Auto-Shutoff

 Under-Voltage Lockout Protection

Ordering information

Part No.

MLX92251LSE-AAA-000-RE

MLX92251LSE-ABA-000-RE

Temperature Code

L (-40°C to 150°C)

Applications

 Windows lifter with Anti-Pinch feature

 Rotation speed & direction detection

 Linear speed & direction detection

 Angular position detection

 Power closures with Anti-Pinch features

Sensitivity

± 7.5 mT

± 2.5 mT

Package Code

SE (TSOT-5L)

Packing Form

RE (Tape & Reel)

Legend:

Temperature Code:

Package Code:

Packing Form:

Ordering example:

L for Temperature Range -40°C to 150°C

SE for TSOT,

RE for Reel

MLX92251LSE-AAA-000-RE

1. Functional Diagram

Switched

Hall

Plate

CDS

Amplifier

Switched

Hall

Plate

CDS

Amplifier

VDD

Voltage Regulator

with Reverse Polarity

Protection

Open-Drain

Output

Direction

Detection

Open-Drain

Output

DIR

Reference

Timing

Logic

GND

2. General Description

The Melexis MLX92251 is a second generation Hall-effect

dual latch designed in mixed signal CMOS technology. The

device integrates a voltage regulator, two Hall sensors with

advanced offset cancellation system and two open-drain

output drivers, all in a single package.

Two Hall plates are integrated on the same piece of silicon,

thus using the high precision of the wafer fabrication

process to ensure a fixed

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spacing of 1.45mm between the sensing elements. The

first Hall plate signal is used to provide the speed signal

output. The combination of both the first and second Hall

plate signals is then internally processed to directly deliver

a direction signal output.

The MLX92251 shares the MLX922xx-based platform,

synonym of high performance in terms of electrical

specification, magnetic specification and protection level.

With latching magnetic characteristics, the speed (SP)

output is turned low or high respectively with a sufficiently

strong South or North pole facing the package top side.

When removing the magnetic field, the device keeps its

previous state.

The direction (DIR) output is latched in Low or High state

depending on the movement direction of the applied

magnetic field, as a result of certain magnetic pulse

sequence on both Hall sensors.

The MLX92251 is delivered in a Green compliant 5-pin Thin

Small Outline Transistor (TSOT) for surface-mount process.

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MLX92251LSE-AxA

Dual Hall Effect Latch with Speed & Direction

Contents

1. Functional Diagram ................................................................................................................................ 1

2. General Description ............................................................................................................................... 1

3. Glossary of Terms................................................................................................................................... 3

4. Absolute Maximum Ratings.................................................................................................................... 3

5. General Electrical Specifications............................................................................................................. 4

6. Magnetic Specifications ......................................................................................................................... 5

6.1. MLX92251LSE-AAA-000 ..................................................................................................................... 5

6.2. MLX92251LSE-ABA-000...................................................................................................................... 5

7. Output Behaviour versus Magnetic Pole ................................................................................................ 6

8. Application Information ......................................................................................................................... 7

8.1. Default Application Schematic........................................................................................................... 7

8.2. Recommended Application Schematic for ISO7637-2 (pulses 5a and 5b)..................................... 7

8.3. Speed (SP) Output Behavior vs. BOP/BRP ......................................................................................... 7

8.4. Output Jitter, Speed Signal Delay and Direction Detection ............................................................. 8

8.5. UV lockout and POR behaviour.......................................................................................................... 8

9. Performance Graphs .............................................................................................................................. 9

9.1. Magnetic parameters vs. TA............................................................................................................... 9

9.2. Magnetic parameters vs. VDD............................................................................................................. 9

9.3. VDSON vs. TA .......................................................................................................................................... 9

9.4. VDSON vs. VDD ........................................................................................................................................ 9

9.5. IDD vs. TA............................................................................................................................................... 9

9.6. IDD vs. VDD ............................................................................................................................................ 9

9.7. ILEAK vs. TA .......................................................................................................................................... 10

9.8. ILEAK vs. VDD ........................................................................................................................................ 10

9.9. Power Derating vs. TA ....................................................................................................................... 10

10. Standard information regarding manufacturability of Melexis products with different soldering

processes ............................................................................................................................................ 11

11. ESD Precautions ................................................................................................................................. 11

12. SE Package Information...................................................................................................................... 12

12.1. Pin Definitions and Descriptions.................................................................................................... 12

13. Contact .............................................................................................................................................. 13

14. Disclaimer .......................................................................................................................................... 13

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MLX92251LSE-AxA

Dual Hall Effect Latch with Speed & Direction

3. Glossary of Terms

MilliTesla (mT), Gauss

RoHS

TSOT

ESD

Units of magnetic flux density: 1mT = 10 Gauss

Restriction of Hazardous Substances

Thin Small Outline Transistor (TSOT package) – also referred with the Melexis package code

“SE”

Electro-Static Discharge

code “SE”

4. Absolute Maximum Ratings

Parameter

Supply Voltage

Supply Current

Reverse Supply Voltage

Reverse Supply Current

Output Voltage

Output Current

Reverse Output Voltage

Reverse Output Current

Operating Temperature Range

Storage Temperature Range

Maximum Junction Temperature

ESD Sensitivity – HBM (1)

ESD Sensitivity – CDM (2)

Magnetic Flux Density

Symbol

VDD

IDD

VDDREV

IDDREV

VOUT

IOUT

VOUTREV

IOUTREV

Table 1. Absolute maximum ratings

Value

+27

+20

-27

-20

+27

+20

-0.5

-50

-40 to +150

-55 to +165

+165

2500

1000

Unlimited

Units

C

Exceeding the absolute maximum ratings may cause permanent damage.

Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

__________________

1 Human Body Model according AEC-Q100-002 standard.

2 Charged Device Model according AEC-Q100-011 standard.

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MLX92251LSE-AxA

Dual Hall Effect Latch with Speed & Direction

5. General Electrical Specifications

DC Operating Parameters TA = -40°C to 150°C, VDD = 2.7V to 24V (unless otherwise specified)

Parameter

Symbol Test Conditions

Min

Supply Voltage

Supply Current

Reverse Supply Current

Output Leakage Current

VDD

IDD

IDDREV

IOFF

Operating

VDD = 12V

VDD = -18V

VOUT = 12V, VDD = 12V, B < BRP

2.7

Output Saturation Voltage

Output Rise/Fall Time (2,3)

Output Current Limit

Output ON Time under Current

Limit conditions(5)

Output OFF Time under Current

Limit conditions(5)

Chopping Frequency

Speed Signal Delay (2,6)

VOUTS

tR / tF

ICL

tCLON

tCLOFF

fCHOP

tSPD

B > BOP, IOUT = 10mA

VDD = 12V, VPU (4) = 5V,

RPU = 1kΩ, CL = 50pF

B > BOP, VOUT = 12V

B > BOP, VPU = 12V, RPU = 100Ω

0.1

150

0.4

Output Refresh Period

Output Jitter (p-p value) (2)

Maximum Switching Frequency (2,7)

Power-On Time (8)

tPER

tJITTER

fSW

tPON

Over 1000 successive output

switching

events @1kHz square wave, BPEAK=

50mT, tRISE=tFALL ≤100μs

≥30mT square wave magnetic

field

VDD= 5V, dVDD/dt > 2V/µs

3.2

Under-voltage Lockout Threshold

Under-voltage Lockout Reaction time (2)

VUVL

tUVL

2.2

SE Package Thermal Resistance

RTH Single layer (1S) JEDEC board

Table 2: electrical specifications

Typ (1)

4.5

0.1

0.2

0.3

230

3.5

400

0.85

±2.6

2.4

300

Max Units

24 V

7 mA

1 mA

10 µA

0.5 V

1 µs

44 mA

µs

kHz

1.6 µs

8.4 µs

µs

kHz

35 μs

2.7 V

µs

°C/W

1 Typical values are defined at TA = +25°C and VDD = 12V

2 Based on device characterization results, not subject to production test

3 Measured between 0.1*VPU and 0.9*VPU

4 RPU and VPU are respectively the external pull-up resistor and pull-up power supply

5 If the Output is in Current Limitation longer than tCLON the Output is switched off in high-impedance state. The Output returns back in

active state at next reaching of BOP or after tCLOFF time interval

6 Controlled delay between direction (DIR) signal update and speed (SP) signal update

7 Maximum switching frequency corresponds to the maximum frequency of the applied magnetic field which is detected without loss of

pulses

8 The Power-On Time represents the time from reaching VDD = 2.7V to the first refresh of the SP output

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MLX92251LSE-AxA

Dual Hall Effect Latch with Speed & Direction

6. Magnetic Specifications

6.1. MLX92251LSE-AAA-000

DC Operating Parameters VDD = 2.7V to 24V and TA =-40°C to 150°C (unless otherwise specified)

Parameter

Symbol Test Conditions

Min Typ Max

Operating Point

Release Point

Magnetic Matching

Magnetic Offset

Temperature Coefficient

Hall Plates Spacing

BOP

BRP

BMATCH

BOFF

6.2. MLX92251LSE-ABA-000

BOP1 – BOP2 or BRP1 – BRP2, TA = 25°C

BOP1 – BOP2 or BRP1 – BRP2

(BOP1 + BRP1) / 2, (BOP2 + BRP2) / 2

-10

-2

-3

-2

Table 3: Magnetic specifications

7.5 10

-7.5 -5

1.45

Units

ppm/°C

DC Operating Parameters VDD = 2.7V to 24V and TA =-40°C to 150°C (unless otherwise specified)

Parameter

Symbol Test Conditions

Min Typ Max

Units

Operating Point

Release Point

Magnetic Matching

Magnetic Offset

Temperature Coefficient

Hall Plates Spacing

BOP

BRP

BMATCH

BOFF

BOP1 – BOP2 or BRP1 – BRP2, TA = 25°C

BOP1 – BOP2 or BRP1 – BRP2

(BOP1 + BRP1) / 2, (BOP2 + BRP2) / 2

0.6 2.5 4.5 mT

-4.5 -2.5 -0.6

-2 2 mT

-3 3 mT

-2 2 mT

-1100

ppm/°C

1.45 mm

Table 3: Magnetic specifications

Note: Temperature coefficient value is guaranteed by design and verified by characterization and is calculated using the

following formula:

 TC  BT 2  BT1 *106, ppm /o C;

B25o C  T2  T1

T1  40o C;

T2  150o C

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