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Preliminary Data Sheet I2147 rev. C 03/99
SAFEIR Series
16TTS..FP
PHASE CONTROL SCR
TO-220 FULLPAK
Description/Features
The 16TTS..FP SAFEIR series of silicon
controlled rectifiers are specifically designed for
medium power switching and phase control
applications. The glass passivation technology
used has reliable operation up to 125° C junction
temperature.
Typical applications are in input rectification (soft
start) and these products are designed to be used
with International Rectifier input diodes, switches
and output rectifiers which are available in identical
package outlines.
Fully isolated package (VINS = 2500 VRMS)
UL E78996 approved
VT < 1.4V @ 10A
ITSM = 200A
VRRM 800 to 1600V
Output Current in Typical Applications
Applications
Single-phase Bridge Three-phase Bridge
Capacitive input filter TA = 55°C,TJ = 125°C,
common heatsink of 1°C/W
13.5
17
Units
A
Major Ratings and Characteristics
Characteristics
16TTS..FP Units
IT(AV)
Sinusoidal
waveform
IRMS
VRRM/VDRM
ITSM
VT @ 10 A, TJ = 25°C
dv/dt
di/dt
T range
J
10 A
16
up to 1600
200
1.4
500
150
- 40 to 125
A
V
A
V
V/µs
A/µs
°C
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Package Outline
TO-220 FULLPAK
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16TTS..FP SAFEIR Series
Preliminary Data Sheet I2147 rev. C 03/99
Voltage Ratings
Part Number
16TTS08FP
16TTS12FP
16TTS16FP
VRRM, maximum
peak reverse voltage
V
800
1200
1600
VDRM , maximum
peak direct voltage
V
800
1200
1600
IRRM/IDRM
125°C
mA
10
Absolute Maximum Ratings
Parameters
IT(AV)
IRMS
ITSM
Max.AverageOn-stateCurrent
Max.RMSOn-stateCurrent
Max.PeakOneCycleNon-Repetitive
SurgeCurrent
I2t Max. I2t for fusing
I2t Max. I2t for fusing
16TTS..FP
10
16
170
200
144
200
2000
Units
Conditions
A @ TC=95°C,180°conductionhalfsinewave
A2s
A2s
10msSinepulse,ratedVRRMapplied
10msSine pulse,novoltagereapplied
10msSinepulse,ratedVRRMapplied
10msSinepulse,novoltagereapplied
t = 0.1 to 10ms, no voltage reapplied
VTM Max.On-stateVoltageDrop
rt On-state Slope Resistance
VT(TO) Threshold Voltage
IRM/IDM Max.Reverse and Direct
Leakage Current
IH Holding Current
1.4
24.0
1.1
0.5
10
Typ. Max.
-- 100
V
m
V
mA
mA
@ 10A, TJ = 25°C
TJ = 125°C
TJ = 25 °C
TJ = 125 °C
VR = rated VRRM/ VDRM
Anode Supply = 6V, Resistive load, Initial IT=1A
16TTS08FP, 16TTS12FP
100 150
16TTS16FP
IL Max.LatchingCurrent
dv/dt Max. Rate of Rise of off-state Voltage
di/dt Max. Rate of Rise of turned-on Current
200
500
150
mA
V/µs
A/µs
Anode Supply = 6V, Resistive load
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16TTS..FP SAFEIR Series
Preliminary Data Sheet I2147 rev. C 03/99
Triggering
Parameters
PGM Max. peak Gate Power
PG(AV) Max. average Gate Power
+ IGM Max. paek positive Gate Current
- VGM Max. paek negative Gate Voltage
IGT Max. required DC Gate Current
to trigger
VGT Max. required DC Gate Voltage
to trigger
VGD Max. DC Gate Voltage not to trigger
IGD Max. DC Gate Current not to trigger
16TTS..FP Units
8.0 W
2.0
1.5 A
10 V
90 mA
60
35
3.0 V
2.0
1.0
0.2
2.0 mA
Conditions
Anode supply = 6V, resistive load, TJ = - 10°C
Anode supply = 6V, resistive load, TJ = 25°C
Anode supply = 6V, resistive load, TJ = 125°C
Anode supply = 6V, resistive load, TJ = - 10°C
Anode supply = 6V, resistive load, TJ = 25°C
Anode supply = 6V, resistive load, TJ = 125°C
TJ = 125°C, VDRM = rated value
TJ = 125°C, VDRM = rated value
Switching
Parameters
tgt Typical turn-on time
trr Typical reverse recovery time
tq Typical turn-off time
16TTS..FP Units
0.9 µs
4
110
Conditions
TJ = 25°C
TJ = 125°C
Thermal-Mechanical Specifications
Parameters
TJ Max. Junction Temperature Range
Tstg Max. Storage Temperature Range
RthJC Max. Thermal Resistance Junction
to Case
RthJA Max. Thermal Resistance Junction
to Ambient
RthCS Typ. Thermal Resistance Case
to Heatsink
wt Approximate Weight
T Mounting Torque
Min.
Max.
Case Style
16TTS..FP Units
- 40 to 125 °C
- 40 to 125
1.5 °C/W
Conditions
DC operation
62
1.5 Mounting surface, smooth and greased
2 (0.07) g (oz.)
6 (5) Kg-cm
12 (10) (Ibf-in)
TO-220FULLPAK
(94/V0)
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16TTS..FP SAFEIR Series
Preliminary Data Sheet I2147 rev. C 03/99
130
16TTS..FP Series
R thJC (DC) = 1.5 °C/W
120
110 Conduction Angle
100
90
80
0
30°
60°
90°
120°
180°
2 4 6 8 10 12
Average On-state Current (A)
Fig. 1 - Current Rating Characteristics
18
180°
16 120°
14
90°
60°
12 30°
10 RMS Limit
8
6 Conduction Angle
4
16TTS..FP Series
2 T J= 125°C
0
0 2 4 6 8 10 12
Average On-state Current (A)
Fig. 3 - On-state Power Loss Characteristics
180
At Any Rated Load Condition And With
Rated VRRM Applied Following Surge.
160
Initial T J= 125°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
140
120
100
16TTS..FP Series
80
1 10 100
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Fig. 5 - Maximum Non-Repetitive Surge Current
4
130
16TTS..FP Series
R thJC (DC) = 1.5 °C/W
120
110 Conduction Period
100
30°
60°
90 90°
120°
180° DC
80
0 2 4 6 8 10 12 14 16 18
Average On-state Current (A)
Fig. 2 - Current Rating Characteristics
25
DC
180°
20 120°
90°
60°
15 30°
10 RMS Limit
Conduction Period
5 16TTS..FP Series
T J = 125°C
0
0 4 8 12 16
Average On-state Current (A)
Fig. 4 - On-state Power Loss Characteristics
200
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration.
180 Initial T J= 125°C
No Voltage Reapplied
160 Rated VRRM Reapplied
140
120
100
16TTS..FP Series
80
0.01
0.1
Pulse Train Duration (s)
1
Fig. 6 - Maximum Non-Repetitive Surge Current
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1000
16TTS..FP Series
100
16TTS..FP SAFEIR Series
Preliminary Data Sheet I2147 rev. C 03/99
10
T J= 25°C
T J= 125°C
1
0 1 2 34 5
Instantaneous On-state Voltage (V)
Fig. 7 - On-state Voltage Drop Characteristics
10
1 D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
0.1
Single Pulse
Steady State Value
(DC Operation)
16TTS..FP Series
0.01
0.0001
0.001
0.01
0.1
Square Wave Pulse Duration (s)
1
10
Fig. 8 - Thermal Impedance ZthJC Characteristics
100
Rectangular gate pulse
a)Recommended load line for
rated di/dt: 10 V, 20 ohms
tr = 0.5 µs, tp >= 6 µs
b)Recommended load line for
10 <= 30% rated di/dt: 10 V, 65 ohms
tr = 1 µs, tp >= 6 µs
(b)
(a)
(1) PGM = 40 , tp = 1 ms
(2) PGM = 20 W, tp = 2 ms
(3) PGM = 8 W, tp = 5 ms
(4) PGM = 4 W, tp = 10 ms
1
VGD
0.1
0.001
IGD
0.01
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(4) (3) (2) (1)
16TTS..FP Series
Frequency Limited by PG(AV)
0.1 1
Instantaneous Gate Current (A)
10
100
Fig. 9 - Gate Characteristics
5