0909ND.pdf 데이터시트 (총 11 페이지) - 파일 다운로드 0909ND 데이타시트 다운로드

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BSZ0909ND
MOSFET
PowerStage3x3
Features
·DualN-channelOptiMOS™MOSFET
·Enhancementmode
·Logiclevel(4.5Vrated)
·Avalancherated
·100%Lead-free;RoHScompliant
·Halogen-freeaccordingtoIEC61249-2-21
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS 30
V
RDS(on),max
18
m
ID 20 A
QOSS
2.3
nC
QG(0V..4.5V)
1.8
nC
PowerStage3x3
Type/OrderingCode
BSZ0909ND
Package
PG-WISON-8
Marking
0909ND
RelatedLinks
-
Final Data Sheet
1 Rev.2.0,2016-12-05

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PowerStage3x3
BSZ0909ND
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Final Data Sheet
2 Rev.2.0,2016-12-05

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PowerStage3x3
BSZ0909ND
1Maximumratings
atTj=25°C,unlessotherwisespecified,onetransistoractive
Table2Maximumratings
Parameter
Symbol
Continuous drain current
ID
Pulsed drain current3)
Avalanche energy, single pulse
Gate source voltage
Power dissipation
Operating and storage temperature
ID,pulse
EAS
VGS
Ptot
Tj,Tstg
Min.
-
-
-
-
-
-
-20
-
-
-55
Values
Typ. Max.
- 20
- 8.1
- 5.5
- 4.1
- 40
-4
- 20
17 -
1.9 -
- 150
Unit Note/TestCondition
VGS=10V,TC=25°C
A
VGS=10V,TA=25°C1)
VGS=4.5V,TA=70°C1)
VGS=4.5V,TA=25°C2)
A TC=25°C
mJ ID=9A,RGS=25
V-
W
TC=25°C
TA=25°C,RthJA=65°C/W1)
°C
IEC climatic category;
DIN IEC 68-1: 55/150/56
2Thermalcharacteristics
Table3Thermalcharacteristics
Parameter
Symbol
Thermal resistance, junction - case
Device on PCB,
minimal footprint
Device on PCB,
6 cm2 cooling area
RthJC
RthJA
RthJA
Min.
-
Values
Typ. Max.
- 7.5
Unit Note/TestCondition
°C/W -
- - 180 °C/W -
- - 65 °C/W -
1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
2) device mounted on a minimum pad (one layer, 70 µm thick)
3) See Diagram 3 for more detailed information
Final Data Sheet
3 Rev.2.0,2016-12-05

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PowerStage3x3
BSZ0909ND
3Electricalcharacteristics
Table4Staticcharacteristics
Parameter
Symbol
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Gate resistance1)
Transconductance
V(BR)DSS
VGS(th)
IDSS
IGSS
RDS(on)
RG
gfs
Min.
30
1.2
-
-
-
-
-
3.5
-
Values
Typ. Max.
--
1.6 2
-1
- 100
- 100
20 25
14.5 18
7 14
22 -
Unit Note/TestCondition
V VGS=0V,ID=1mA
V VDS=VGS,ID=250µA
µA
VDS=30V,VGS=0V,Tj=25°C
VDS=30V,VGS=0V,Tj=150°C
nA VGS=20V,VDS=0V
m
VGS=4.5V,ID=9A
VGS=10V,ID=9A
-
S |VDS|>2|ID|RDS(on)max,ID=9A
Table5Dynamiccharacteristics
Parameter
Symbol
Input capacitance1)
Output capacitance1)
Reverse transfer capacitance
Turn-on delay time
Ciss
Coss
Crss
td(on)
Rise time
tr
Turn-off delay time
td(off)
Fall time
tf
Min.
-
-
-
-
-
-
-
Values
Typ. Max.
270 360
88 120
11 -
5-
2.5 -
15 -
2-
Unit Note/TestCondition
pF VGS=0V,VDS=15V,f=1MHz
pF VGS=0V,VDS=15V,f=1MHz
pF VGS=0V,VDS=15V,f=1MHz
ns
VDD=15V,VGS=10V,ID=9A,
RG,ext=6
ns
VDD=15V,VGS=10V,ID=9A,
RG,ext=6
ns
VDD=15V,VGS=10V,ID=9A,
RG,ext=6
ns
VDD=15V,VGS=10V,ID=9A,
RG,ext=6
Table6Gatechargecharacteristics2)
Parameter
Symbol
Gate to source charge
Gate charge at threshold
Gate to drain charge
Switching charge
Gate charge total
Gate plateau voltage
Gate charge total
Gate charge total, sync. FET
Output charge
Qgs
Qg(th)
Qgd
Qsw
Qg
Vplateau
Qg
Qg(sync)
Qoss
Min.
-
-
-
-
-
-
-
-
-
Values
Typ. Max.
0.8 -
0.4 -
0.5 -
0.8 -
1.8 2.6
2.8 -
3.7 5.2
1.5 -
2.3 -
Unit Note/TestCondition
nC VDD=15V,ID=9A,VGS=0to4.5V
nC VDD=15V,ID=9A,VGS=0to4.5V
nC VDD=15V,ID=9A,VGS=0to4.5V
nC VDD=15V,ID=9A,VGS=0to4.5V
nC VDD=15V,ID=9A,VGS=0to4.5V
V VDD=15V,ID=9A,VGS=0to4.5V
nC VDD=15V,ID=9A,VGS=0to10V
nC VDS=0.1V,VGS=0to4.5V
nC VDD=15V,VGS=0V
1) Defined by design. Not subject to production test.
2) See Gate charge waveformsfor parameter definition
Final Data Sheet
4
Rev.2.0,2016-12-05

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PowerStage3x3
BSZ0909ND
Table7Reversediode
Parameter
Diode continuous forward current
Diode pulse current
Diode forward voltage
Reverse recovery charge
Symbol
IS
IS,pulse
VSD
Qrr
Min.
-
-
-
-
Values
Typ. Max.
- 17
- 40
0.92 1.2
5-
Unit Note/TestCondition
A TC=25°C
A TC=25°C
V VGS=0V,IF=9A,Tj=25°C
nC VR=15V,IF=9A,diF/dt=400A/µs
Final Data Sheet
5 Rev.2.0,2016-12-05