0909NS.pdf 데이터시트 (총 9 페이지) - 파일 다운로드 0909NS 데이타시트 다운로드

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BSZ0909NS
OptiMOS™ Power-MOSFET
Features
• Optimized for 5V driver application (Notebook, VGA, POL)
Product Summary
VDS
34 V
• Low FOMSW for High Frequency SMPS
• 100% avalanche tested
RDS(on),max
VGS=10 V
VGS=4.5 V
12 mW
15
• Improved switching behaviour
• N-channel
• Very low on-resistance R DS(on) @ V GS=4.5 V
• Excellent gate charge x R DS(on) product (FOM)
ID
36 A
PG-TSDSON-8
• Qualified according to JEDEC1) for target applications
• Superior thermal resistance
• Pb-free plating; RoHS compliant
• Halogen-free according to IEC61249-2-21
Type
BSZ0909NS
Package
Marking
PG-TSDSON-8 0909NS
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
Pulsed drain current3)
Avalanche current, single pulse4)
Avalanche energy, single pulse
Gate source voltage
1) J-STD20 and JESD22
I D V GS=10 V, T C=25 °C
V GS=10 V, T C=100 °C
V GS=4.5 V, T C=25 °C
V GS=4.5 V,
T C=100 °C
V GS=4.5 V, T A=25 °C,
R thJA=60 K/W2)
I D,pulse
I AS
E AS
V GS
T C=25 °C
T C=25 °C
I D=20 A, R GS=25 W
Value
36
23
32
21
9
144
20
9
±20
Unit
A
mJ
V
Rev. 2.0
page 1
2013-05-14

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Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Power dissipation
P tot T C=25 °C
T A=25 °C,
R thJA=60 K/W2)
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
BSZ0909NS
Value
25
2.1
-55 ... 150
55/150/56
Unit
W
°C
Parameter
Symbol Conditions
Thermal characteristics
Thermal resistance, junction - case
Device on PCB
R thJC
R thJA
6 cm2 cooling area2)
Electrical characteristics, at T j=25 °C, unless otherwise specified
min.
Values
typ.
Unit
max.
- - 5.1 K/W
- - 60
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
V (BR)DSS V GS=0 V, I D=1 mA
V GS(th) V DS=V GS, I D=250 µA
I DSS
V DS=34 V, V GS=0 V,
T j=25 °C
34
1.2
-
-
-
0.1
-V
2
1 µA
V DS=34 V, V GS=0 V,
T j=125 °C
-
10 100
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
I GSS
V GS=16 V, V DS=0 V
R DS(on) V GS=4.5 V, I D=12 A
V GS=10 V, I D=20 A
RG
- 10 100 nA
- 12.0 15 mW
- 10.0 12.0
1.5 3.0 6.0 W
Transconductance
g fs
|V DS|>2|I D|R DS(on)max,
I D=30 A
24
47
-S
2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
3) See figure 3 for more detailed information
Rev. 2.0
page 2
2013-05-14

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BSZ0909NS
Parameter
Dynamic characteristics
Symbol Conditions
min.
Values
typ.
Unit
max.
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics5)
Gate to source charge
Gate charge at threshold
Gate to drain charge
Switching charge
Gate charge total
Gate plateau voltage
Gate charge total
C iss
C oss
Crss
t d(on)
tr
t d(off)
tf
V GS=0 V, V DS=15 V,
f =1 MHz
V DD=15 V, V GS=10 V,
I D=30 A, R G,ext=1.6 W
-
-
-
-
-
-
-
975 1310 pF
340 450
21 -
4.5 - ns
2.2 -
16 -
2.0 -
Q gs - 3.3 4.4 nC
Q g(th)
- 1.5 -
Q gd V DD=15 V, I D=30 A, - 1.6 2.1
Q sw V GS=0 to 4.5 V
- 3.2 -
Q g - 6.1 8.1
V plateau
- 3.4 - V
Qg
V DD=15 V, I D=30 A,
V GS=0 to 10 V
-
13 17
Gate charge total, sync. FET
Q g(sync)
V DS=0.1 V,
V GS=0 to 4.5 V
- 5.3 - nC
Output charge
Reverse Diode
Q oss
V DD=15 V, V GS=0 V
-
8.9 12
Diode continuous forward current
Diode pulse current
IS
I S,pulse
T C=25 °C
- - 23 A
- - 148
Diode forward voltage
V SD
V GS=0 V, I F=20 A,
T j=25 °C
- 0.9 - V
Reverse recovery charge
Q rr
V R=15 V, I F=I S,
di F/dt =400 A/µs
4) See figure 13 for more detailed information
5) See figure 16 for gate charge parameter definition
- - 10 nC
Rev. 2.0
page 3
2013-05-14

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1 Power dissipation
P tot=f(T C)
30
24
18
12
6
0
0 40 80
TC [°C]
3 Safe operating area
I D=f(V DS); T C=25 °C; D =0
parameter: t p
103
120
2 Drain current
I D=f(T C)
parameter: V GS
40
BSZ0909NS
35
30
25 10V
4.5V
20
15
10
5
0
160 0 40 80 120
TC [°C]
4 Max. transient thermal impedance
Z thJC=f(t p)
parameter: D =t p/T
10
160
limited by on-state
resistance
102
1 µs
10 µs
100 µs
1 ms
101
DC
100
0.5
0.2
1
0.1
0.05
0.02
0.01
0.1
single pulse
10-1
10-1
Rev. 2.0
100 101
VDS [V]
102
0.01 0
10-6
0
10-5
0
10-4
0
10-3
0
10-2
0
10-1
1
100
tp [s]
page 4
2013-05-14

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5 Typ. output characteristics
I D=f(V DS); T j=25 °C
parameter: V GS
120
10 V
5V
100
4.5 V
80
4V
60
40 3.5 V
20
0
012
VDS [V]
7 Typ. transfer characteristics
I D=f(V GS); |V DS|>2|I D|R DS(on)max
parameter: T j
120
3.2 V
3V
2.8 V
BSZ0909NS
6 Typ. drain-source on resistance
R DS(on)=f(I D); T j=25 °C
parameter: V GS
30
24
3V
3.2 V
18
3.5 V
4V
12
4.5 V
5V
6V
10 V
6
0
3 0 10 20 30 40 50
ID [A]
8 Typ. forward transconductance
g fs=f(I D); T j=25 °C
120
100 100
80 80
25 °C
60 60
150 °C
40 40
20 20
0
012345
VGS [V]
0
0
Rev. 2.0
page 5
40 80
ID [A]
120
2013-05-14