900N15N.pdf 데이터시트 (총 9 페이지) - 파일 다운로드 900N15N 데이타시트 다운로드

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s
OptiMOSTM3 Power-Transistor
Package
Marking
• N-channel, normal level
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on)
• 150 °C operating temperature
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1) for target application
• Halogen-free according to IEC61249-2-21
BSZ900N15NS3 G
Product Summary
V DS
R DS(on),max
ID
150 V
90 mΩ
13 A
PG-TSDSON-8
Type
BSZ900N15NS3 G
Package
PG-TSDSON-8
Marking
900N15N
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
I D T C=25 °C
T C=100 °C
Pulsed drain current2)
I D,pulse T C=25 °C
Avalanche energy, single pulse
E AS I D=10 A, R GS=25 Ω
Gate source voltage
V GS
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
1)J-STD20 and JESD22
Value
13
8
52
30
±20
38
-55 ... 150
55/150/56
Unit
A
mJ
V
W
°C
Rev. 2.1
page 1
2011-05-16

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Parameter
Symbol Conditions
Thermal characteristics
Thermal resistance, junction - case
Thermal resistance,
junction - ambient
R thJC
R thJA
6 cm2 cooling area3)
BSZ900N15NS3 G
min.
Values
typ.
Unit
max.
- - 3.3 K/W
- - 60
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
Transconductance
V (BR)DSS V GS=0 V, I D=1 mA
V GS(th) V DS=V GS, I D=20 µA
I DSS
V DS=120 V, V GS=0 V,
T j=25 °C
V DS=120 V, V GS=0 V,
T j=125 °C
I GSS
R DS(on)
V GS=20 V, V DS=0 V
V GS=10 V, I D=10 A
V GS=8 V, I D=5 A
RG
g fs
|V DS|>2|I D|R DS(on)max,
I D=10 A
150
2
-
-
-
-
-
-
6
-
3
0.01
10
1
74
75
1.7
12
-V
4
1 µA
100
100 nA
90 mΩ
91
-Ω
-S
3) see figure 3
Rev. 2.1
page 2
2011-05-16

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Parameter
Symbol Conditions
BSZ900N15NS3 G
min.
Values
typ.
Unit
max.
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics4)
Gate to source charge
Gate to drain charge
Switching charge
Gate charge total
Gate plateau voltage
Output charge
C iss
C oss
C rss
t d(on)
tr
t d(off)
tf
V GS=0 V, V DS=75 V,
f =1 MHz
V DD=75 V, V GS=10 V,
I D=5 A, R G=1.6 Ω
-
-
-
-
-
-
-
380 510 pF
46 61
3-
4 - ns
4-
8-
3-
Q gs - 1.9 - nC
Q gd
Q sw
Qg
V DD=75 V, I D=5 A,
V GS=0 to 10 V
- 0.9 -
- 1.7 -
- 5.0 7
V plateau
- 5.2 - V
Q oss
V DD=75 V, V GS=0 V
-
12 17 nC
Reverse Diode
Diode continous forward current
Diode pulse current
Diode forward voltage
Reverse recovery time
Reverse recovery charge
IS
I S,pulse
T C=25 °C
V SD
V GS=0 V, I F=13 A,
T j=25 °C
t rr V R=75 V, I F=5 A ,
Q rr di F/dt =100 A/µs
4) See figure 16 for gate charge parameter definition
- - 13 A
- - 52
- 0.9 1.2 V
- 59
ns
- 123 - nC
Rev. 2.1
page 3
2011-05-16

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1 Power dissipation
P tot=f(T C)
2 Drain current
I D=f(T C); V GS10 V
BSZ900N15NS3 G
40 15
35
30
10
25
20
15
5
10
5
0
0 40 80
T C [°C]
3 Safe operating area
I D=f(V DS); T C=25 °C; D =0
parameter: t p
102
120
1 µs
0
160 0
40 80 120
T C [°C]
4 Max. transient thermal impedance
Z thJC=f(t p)
parameter: D =t p/T
101
10 µs
101
100
10-1
10-1
Rev. 2.1
100 µs
1 ms
DC
100 101 102
V DS [V]
0.5
100 0.2
0.1
0.05
0.02
0.01
single pulse
10-1
103
t p [s]
page 4
160
2011-05-16

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5 Typ. output characteristics
I D=f(V DS); T j=25 °C
parameter: V GS
30
25 10 V
20 7 V
15
6V
10
5
0
0
5.5 V
4.5 V
5V
12
V DS [V]
7 Typ. transfer characteristics
I D=f(V GS); |V DS|>2|I D|R DS(on)max
parameter: T j
28
BSZ900N15NS3 G
6 Typ. drain-source on resistance
R DS(on)=f(I D); T j=25 °C
parameter: V GS
150
140
130 5 V
5.5 V
120 6 V
110
100
90 8 V
80
70 10 V
60
50
40
30
20
10
0
3 0 4 8 12 16
I D [A]
8 Typ. forward transconductance
g fs=f(I D); T j=25 °C
20
24
15
20
16
10
12
8
4
0
0
Rev. 2.1
150 °C
25 °C
246
V GS [V]
5
0
80
page 5
10 20
I D [A]
30
2011-05-16