900N20N.pdf 데이터시트 (총 9 페이지) - 파일 다운로드 900N20N 데이타시트 다운로드

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Type
OptiMOSTM3 Power-Transistor
Features
• Optimized for dc-dc conversion
• N-channel, normal level
• Excellent gate charge x R DS(on) product (FOM)
• Low on-resistance R DS(on)
• 150 °C operating temperature
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1) for target application
• Halogen-free according to IEC61249-2-21
BSZ900N20NS3 G
Product Summary
VDS
RDS(on),max
ID
200 V
90 mW
15.2 A
PG-TSDSON-8
Type
BSZ900N20NS3 G
Package
Marking
PG-TSDSON-8 900N20N
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
Pulsed drain current2)
Avalanche energy, single pulse
Reverse diode dv /dt
ID
I D,pulse
E AS
dv /dt
T C=25 °C
T C=100 °C
T C=25 °C
I D=7.6 A, R GS=25 W
Gate source voltage
V GS
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
1)J-STD20 and JESD22
2) see figure 3
Value
15.2
10.7
61
100
10
±20
62.5
-55 ... 150
55/150/56
Unit
A
mJ
kV/µs
V
W
°C
Rev. 2.2
page 1
2011-07-14

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Parameter
Symbol Conditions
Thermal characteristics
Thermal resistance, junction - case R thJC
Thermal resistance,
junction - ambient
R thJA
6 cm2 cooling area3)
BSZ900N20NS3 G
min.
Values
typ.
Unit
max.
- - 2.5 K/W
- - 60
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
V (BR)DSS V GS=0 V, I D=1 mA
V GS(th) V DS=V GS, I D=30 µA
I DSS
V DS=160 V, V GS=0 V,
T j=25 °C
200
2
-
-
3
0.1
-V
4
1 µA
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
Transconductance
V DS=160 V, V GS=0 V,
T j=125 °C
I GSS
V GS=20 V, V DS=0 V
R DS(on) V GS=10 V, I D=7.6 A
RG
g fs
|V DS|>2|I D|R DS(on)max,
I D=7.6 A
-
-
-
-
8
10 100
1 100 nA
77 90 mW
2.2 - W
16 - S
3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 2.2
page 2
2011-07-14

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Parameter
Symbol Conditions
BSZ900N20NS3 G
min.
Values
typ.
Unit
max.
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
C iss
C oss
C rss
t d(on)
tr
t d(off)
tf
V GS=0 V, V DS=100 V,
f =1 MHz
V DD=100 V,
V GS=10 V, I D=7.6 A,
R G=1.6 W
-
-
-
-
-
-
-
690 920 pF
52 69
5.2 -
5 - ns
4-
10 -
3-
Gate Charge Characteristics4)
Gate to source charge
Gate to drain charge
Switching charge
Gate charge total
Gate plateau voltage
Output charge
Q gs
Q gd
Q sw
V DD=100 V, I D=7.6 A,
V GS=0 to 10 V
Qg
V plateau
Q oss
V DD=100 V, V GS=0 V
-
-
-
-
-
-
3.1 - nC
1.3 -
2.3 -
8.7 11.6
4.5 - V
20 26 nC
Reverse Diode
Diode continous forward current
Diode pulse current
IS
I S,pulse
T C=25 °C
- - 15.2 A
- - 61
Diode forward voltage
V SD
V GS=0 V, I F=15.2 A,
T j=25 °C
-
1 1.2 V
Reverse recovery time
Reverse recovery charge
t rr V R=100 V, I F=I S,
Q rr di F/dt =100 A/µs
- 86 - ns
- 309 - nC
4) See figure 16 for gate charge parameter definition
Rev. 2.2
page 3
2011-07-14

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1 Power dissipation
P tot=f(T C)
2 Drain current
I D=f(T C); V GS≥10 V
BSZ900N20NS3 G
70
60
50
40
30
20
10
0
0 40 80
TC [°C]
3 Safe operating area
I D=f(V DS); T C=25 °C; D =0
parameter: t p
102
120
1 µs
16
14
12
10
8
6
4
2
0
160 0 40 80 120
TC [°C]
4 Max. transient thermal impedance
Z thJC=f(t p)
parameter: D =t p/T
101
160
101
100
10-1
10-1
Rev. 2.2
10 µs
100 µs
1 ms
10 ms
DC
100 101 102
VDS [V]
0.5
100
0.2
0.1
0.05
0.01
0.02
10-1
single pulse
103
10-5
10-4
10-3
10-2
10-1
100
tp [s]
page 4
2011-07-14

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5 Typ. output characteristics
I D=f(V DS); T j=25 °C
parameter: V GS
30
10 V
25
7V
20 5.5 V
5V
15
6V
10
4.5 V
5
BSZ900N20NS3 G
6 Typ. drain-source on resistance
R DS(on)=f(I D); T j=25 °C
parameter: V GS
160
120
80
40
5V
5.5 V
6V
8V
10 V
0
0123
VDS [V]
7 Typ. transfer characteristics
I D=f(V GS); |V DS|>2|I D|R DS(on)max
parameter: T j
40
4
35
30
25
20
15
10
5
0
0
150 °C
25 °C
246
VGS [V]
Rev. 2.2
0
5 0 4 8 12
ID [A]
8 Typ. forward transconductance
g fs=f(I D); T j=25 °C
16
32
28
24
20
16
12
8
4
0
8 0 5 10 15 20 25 30
ID [A]
page 5
2011-07-14