IAUC120N04S6N009.pdf 데이터시트 (총 9 페이지) - 파일 다운로드 IAUC120N04S6N009 데이타시트 다운로드

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IAUC120N04S6N009
OptiMOS™- 6 Power-Transistor
Product Summary
Features
• OptiMOS™ - power MOSFET for automotive applications
VDS
RDS(on),max
ID
40 V
0.9 m
120 A
PG-TDSON-8
• N-channel - Enhancement mode - Normal Level
• AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green Product (RoHS compliant)
1
1
• 100% Avalanche tested
Type
IAUC120N04S6N009
Package
PG-TDSON-8
Marking
6N04N009
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Continuous drain current1)
Symbol
Conditions
I D T C=25°C, V GS=10V
T C=100°C, V GS=10V2)
Pulsed drain current2)
Avalanche energy, single pulse2)
Avalanche current, single pulse
Gate source voltage
Power dissipation
Operating and storage temperature
I D,pulse T C=25°C
E AS I D=60A, R G,min=25
I AS R G,min=25
V GS
-
P tot T C=25°C
T j, T stg -
Value
120
120
480
400
60
±20
150
-55 ... +175
Unit
A
mJ
A
V
W
°C
Rev. 1.0
page 1
2018-09-27

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IAUC120N04S6N009
Parameter
Symbol
Conditions
Thermal characteristics2)
Thermal resistance, junction - case R thJC
Thermal resistance, junction -
ambient
R thJA
-
6 cm2 cooling area3)
min.
Values
typ.
Unit
max.
- - 1.0 K/W
- - 50
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Gate resistance2)
V (BR)DSS V GS=0V, I D= 1mA
V GS(th) V DS=V GS, I D=90µA
I DSS
V DS=40V, V GS=0V,
T j=25°C
V DS=40V, V GS=0V,
T j=125°C2)
I GSS
R DS(on)
V GS=20V, V DS=0V
V GS=7V, I D=60A
V GS=10V, I D=60A
RG
40 -
-V
2.2 2.8 3.4
- - 1 µA
- - 100
- - 100 nA
- 0.95 1.1 m
-
0.75
0.9
- 0.9 -
Rev. 1.0
page 2
2018-09-27

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IAUC120N04S6N009
Parameter
Dynamic characteristics2)
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics2)
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Symbol
Conditions
min.
Values
typ.
Unit
max.
C iss
C oss
Crss
V GS=0V, V DS=25V,
f =1MHz
- 5530 7360 pF
- 1550 2070
- 108 125
t d(on)
- 10 - ns
tr
V DD=20V, V GS=10V,
-
6
-
t d(off)
I D=120A, R G=3.5
-
22
-
t f - 11 -
Q gs - 25 33 nC
Q gd V DD=32V, I D=120A, - 15 28
Q g V GS=0 to 10V
- 76 115
V plateau
- 4.5 - V
Reverse Diode
Diode continous forward current2)
Diode pulse current2)
Diode forward voltage
Reverse recovery time2)
IS
I S,pulse
V SD
T C=25°C
V GS=0V, I F=60A,
T j=25°C
t rr
V R=20V, I F=120A,
di F/dt =100A/µs
- - 120 A
- - 480
- 0.8 1.1 V
- 60 - ns
Reverse recovery charge2)
Q rr
- 73 - nC
1) Current is limited by package; with an R thJC = 1 K/W the chip is able to carry 300 A at 25 °C.
2) The parameter is not subject to production test- verified by design/characterization.
3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 1.0
page 3
2018-09-27

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1 Power dissipation
P tot = f(T C); V GS = 10 V
IAUC120N04S6N009
2 Drain current
I D = f(T C); V GS = 10 V
140
150
120
100
100
80
60
50 40
20
0
0 50 100
TC [°C]
3 Safe operating area
I D = f(V DS); T C = 25 °C; D = 0
parameter: t p
1000
150
1 µs
10 µs
100
100 µs
150 µs
10
0
200 0 50 100 150
TC [°C]
4 Max. transient thermal impedance
Z thJC = f(t p)
parameter: D =t p/T
101
100
0.5
10-1
0.1
0.05
0.01
10-2
single pulse
200
1
0.1
Rev. 1.0
1 10
VDS [V]
100
10-3
10-6
10-5
10-4
10-3
10-2
10-1
100
tp [s]
page 4
2018-09-27

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IAUC120N04S6N009
5 Typ. output characteristics
I D = f(V DS); T j = 25 °C
parameter: V GS
400
10 V
360
7V
320
5.5 V
5V
280
240
200
160
4.5 V
120
80
40
0
012
VDS [V]
7 Typ. transfer characteristics
I D = f(V GS); V DS = 6V
parameter: T j
500
400
6 Typ. drain-source on-state resistance
R DS(on) = f(I D); T j = 25 °C
parameter: V GS
12
10
4.5 V
8
6
5V
4
2
5.5 V
7V
10 V
0
3 0 50 100 150 200 250 300 350 400
ID [A]
8 Typ. drain-source on-state resistance
R DS(on) = f(T j); I D = 60 A; V GS = 10 V
1.6
1.4
300 1.2
200
175°C
100 25°C
-55°C
0
3 3.5 4 4.5 5 5.5 6
VGS [V]
1
0.8
0.6
0.4
-60 -20 20 60 100 140 180
Tj [°C]
Rev. 1.0
page 5
2018-09-27