IAUC120N04S6N009
OptiMOS™- 6 Power-Transistor
Product Summary
Features
• OptiMOS™ - power MOSFET for automotive applications
VDS
RDS(on),max
ID
40 V
0.9 m
120 A
PG-TDSON-8
• N-channel - Enhancement mode - Normal Level
• AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green Product (RoHS compliant)
1
1
• 100% Avalanche tested
Type
IAUC120N04S6N009
Package
PG-TDSON-8
Marking
6N04N009
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Continuous drain current1)
Symbol
Conditions
I D T C=25°C, V GS=10V
T C=100°C, V GS=10V2)
Pulsed drain current2)
Avalanche energy, single pulse2)
Avalanche current, single pulse
Gate source voltage
Power dissipation
Operating and storage temperature
I D,pulse T C=25°C
E AS I D=60A, R G,min=25
I AS R G,min=25
V GS
-
P tot T C=25°C
T j, T stg -
Value
120
120
480
400
60
±20
150
-55 ... +175
Unit
A
mJ
A
V
W
°C
Rev. 1.0
page 1
2018-09-27