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IPN60R2K1CE
MOSFET
600VCoolMOSªCEPowerTransistor
CoolMOS™isarevolutionarytechnologyforhighvoltagepower
MOSFETs,designedaccordingtothesuperjunction(SJ)principleand
pioneeredbyInfineonTechnologies.CoolMOS™CEisa
price-performanceoptimizedplatformenablingtotargetcostsensitive
applicationsinConsumerandLightingmarketsbystillmeetinghighest
efficiencystandards.Thenewseriesprovidesallbenefitsofafast
switchingSuperjunctionMOSFETwhilenotsacrificingeaseofuseand
offeringthebestcostdownperformanceratioavailableonthemarket.
Features
•ExtremelylowlossesduetoverylowFOMRdson*QgandEoss
•Veryhighcommutationruggedness
•Easytouse/drive
•Pb-freeplating,Halogenfreemoldcompound
•Qualifiedforstandardgradeapplications
Applications
Adapter,ChargerandLighting
Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate
orseperatetotempolesisgenerallyrecommended.
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS @ Tj,max
RDS(on),max
Qg,typ
ID,pulse
Eoss@400V
Body diode di/dt
650
2.1
6.7
5.9
0.76
500
V
nC
A
µJ
A/µs
Type/OrderingCode
IPN60R2K1CE
Package
PG-SOT223
Marking
60S2K1
PG-SOT223
Gate
Pin 1
Drain
Pin 2
Source
Pin 3
RelatedLinks
see Appendix A
Final Data Sheet
1 Rev.2.0,2016-04-29

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600VCoolMOSªCEPowerTransistor
IPN60R2K1CE
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Final Data Sheet
2 Rev.2.0,2016-04-29

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600VCoolMOSªCEPowerTransistor
IPN60R2K1CE
1Maximumratings
atTj=25°C,unlessotherwisespecified
Table2Maximumratings
Parameter
Symbol
Continuous drain current1)
ID
Pulsed drain current2)
Avalanche energy, single pulse
Avalanche energy, repetitive
Avalanche current, repetitive
MOSFET dv/dt ruggedness
ID,pulse
EAS
EAR
IAR
dv/dt
Gate source voltage
VGS
Power dissipation
Operating and storage temperature
Continuous diode forward current
Diode pulse current2)
Reverse diode dv/dt3)
Maximum diode commutation speed3)
Ptot
Tj,Tstg
IS
IS,pulse
dv/dt
dif/dt
Min.
-
-
-
-
-
-
-
-20
-30
-
-40
-
-
-
-
Values
Typ. Max.
- 3.7
- 2.4
- 5.9
- 11
- 0.06
- 0.4
- 50
- 20
- 30
- 5.0
- 150
- 1.0
- 5.9
- 15
- 500
Unit Note/TestCondition
A
TC = 25°C
TC = 100°C
A TC = 25°C
mJ ID = 0.4A; VDD = 50V
mJ ID = 0.4A; VDD = 50V
A-
V/ns VDS=0...480V
V
static;
AC (f>1 Hz)
W TC=25°C
°C -
A TC=25°C
A
V/ns
A/µs
TC = 25°C
VDS=0...400V,ISD<=IS,Tj=25°C
VDS=0...400V,ISD<=IS,Tj=25°C
2Thermalcharacteristics
Table3Thermalcharacteristics
Parameter
Symbol
Thermal resistance, junction - solder
point
RthJS
Thermal resistance, junction
for minimal footprint
- ambient
RthJA
Thermal resistance, junction
soldered on copper area
- ambient
RthJA
Soldering temperature, wavesoldering
only allowed at leads
Tsold
Values
Unit Note/TestCondition
Min. Typ. Max.
- - 24.7 °C/W -
- - 160 °C/W minimal footprint
Device on 40mm*40mm*1.5 epoxy
PCB FR4 with 6cm2 (one layer 70µm
- - 75 °C/W thick) copper area for drain
connection and cooling. PCB is
vertical without blown air.
- - 260 °C reflow MSL3
1) DPAK equivalent. Limited by Tj max. Maximum duty cycle D=0.5
2) Pulse width tp limited by Tj,max
3)VDClink=400V;VDS,peak<V(BR)DSS;identicallowsideandhighsideswitchwithidenticalRG
Final Data Sheet
3
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600VCoolMOSªCEPowerTransistor
IPN60R2K1CE
3Electricalcharacteristics
Table4Staticcharacteristics
Parameter
Symbol
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage curent
Drain-source on-state resistance
Gate resistance
V(BR)DSS
VGS(th)
IDSS
IGSS
RDS(on)
RG
Min.
600
2.50
-
-
-
-
-
-
Values
Typ. Max.
--
3 3.50
-1
10 -
- 100
1.89 2.10
4.91 -
12 -
Unit Note/TestCondition
V VGS=0V,ID=0.25mA
V VDS=VGS,ID=0.06mA
µA
VDS=600V,VGS=0V,Tj=25°C
VDS=600V,VGS=0V,Tj=150°C
nA VGS=20V,VDS=0V
VGS=10V,ID=0.8A,Tj=25°C
VGS=10V,ID=0.8A,Tj=150°C
f=1MHz,opendrain
Table5Dynamiccharacteristics
Parameter
Symbol
Input capacitance
Output capacitance
Effective output capacitance, energy
related1)
Effective output capacitance, time
related2)
Turn-on delay time
Ciss
Coss
Co(er)
Co(tr)
td(on)
Rise time
tr
Turn-off delay time
td(off)
Fall time
tf
Min.
-
-
-
Values
Typ. Max.
140 -
12 -
8.5 -
Unit Note/TestCondition
pF VGS=0V,VDS=100V,f=1MHz
pF VGS=0V,VDS=100V,f=1MHz
pF VGS=0V,VDS=0...480V
- 29.6 - pF ID=constant,VGS=0V,VDS=0...480V
-
7-
ns
VDD=400V,VGS=13V,ID=0.9A,
RG=12.2
-
7-
ns
VDD=400V,VGS=13V,ID=0.9A,
RG=12.2
-
30 -
ns
VDD=400V,VGS=13V,ID=0.9A,
RG=12.2
-
50 -
ns
VDD=400V,VGS=13V,ID=0.9A,
RG=12.2
Table6Gatechargecharacteristics
Parameter
Symbol
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Qgs
Qgd
Qg
Vplateau
Min.
-
-
-
-
Values
Typ. Max.
0.8 -
3.6 -
6.7 -
5.4 -
Unit Note/TestCondition
nC VDD=480V,ID=0.9A,VGS=0to10V
nC VDD=480V,ID=0.9A,VGS=0to10V
nC VDD=480V,ID=0.9A,VGS=0to10V
V VDD=480V,ID=0.9A,VGS=0to10V
1)Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to480V
2)Co(tr)isafixedcapacitancethatgivesthesamechargingtimeasCosswhileVDSisrisingfrom0to480V
Final Data Sheet
4
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600VCoolMOSªCEPowerTransistor
IPN60R2K1CE
Table7Reversediodecharacteristics
Parameter
Symbol
Diode forward voltage
Reverse recovery time
Reverse recovery charge
Peak reverse recovery current
VSD
trr
Qrr
Irrm
Min.
-
-
-
-
Values
Typ. Max.
0.9 -
180 -
0.67 -
7.1 -
Unit Note/TestCondition
V VGS=0V,IF=0.9A,Tf=25°C
ns VR=400V,IF=0.9A,diF/dt=100A/µs
µC VR=400V,IF=0.9A,diF/dt=100A/µs
A VR=400V,IF=0.9A,diF/dt=100A/µs
Final Data Sheet
5 Rev.2.0,2016-04-29