E13007.pdf 데이터시트 (총 5 페이지) - 파일 다운로드 E13007 데이타시트 다운로드

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KSE13006/13007
High Voltage Switch Mode Application
• High Speed Switching
• Suitable for Switching Regulator and Motor Control
1 TO-220
1.Base 2.Collector 3.Emitter
NPN Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
Parameter
VCBO
Collector-Base Voltage
: KSE13006
: KSE13007
VCEO
Collector-Emitter Voltage
: KSE13006
: KSE13007
VEBO
IC
ICP
IB
PC
TJ
TSTG
Emitter- Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current
Collector Dissipation (TC=25°C)
Junction Temperature
Storage Temperature
Value
600
700
300
400
9
8
16
4
80
150
- 65 ~ 150
Units
V
V
V
V
V
A
A
A
W
°C
°C
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
Parameter
Test Condition
BVCEO
Collector- Emitter Breakdown Voltage
: KSE13006
: KSE13007
IC = 10mA, IB = 0
IEBO
hFE
VCE(sat)
Emitter Cut-off Current
*DC Current Gain
*Collector-Emitter Saturation Voltage
VBE (sat)
*Base-Emitter Saturation Voltage
Cob Output Capacitance
fT Current Gain Bandwidth Product
tON Turn On Time
tSTG
Storage Time
tF Fall Time
* Pulse test: PW300µs, Duty cycle2%
VEB = 9V, IC = 0
VCE = 5V, IC = 2A
VCE = 5V, IC = 5A
IC = 2A, IB = 0.4A
IC = 5A, IB = 1A
IC = 8A, IB = 2A
IC = 2A, IB = 0.4A
IC = 5A, IB = 1A
VCB = 10V, f = 0.1MHz
VCE = 10V, IC = 0.5A
VCC = 125V, IC = 5A
IB1 = -IB2 = 1A
RL = 50
Min. Typ. Max. Units
300 V
400 V
1 mA
8 60
5 30
1V
2V
3V
1.2 V
1.6 V
110 pF
4 MHz
1.6 µs
3 µs
0.7 µs
©2000 Fairchild Semiconductor International
Rev. A1, December 2000

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Typical Characteristics
100
V = 5V
CE
10
1
0.1 1
IC[A], COLLECTOR CURRENT
Figure 1. DC current Gain
10
1000
100
10
1
0.1 1 10 100 1000
VCB[V], COLLECTOR-BASE VOLTAGE
Figure 3. Collector Output Capacitance
10000
1000
V =125V
CC
I =5I
CB
tSTG
100
tF
10
0.1
1
IC[A], COLLECTOR CURRENT
Figure 5. Turn Off Time
10
©2000 Fairchild Semiconductor International
10
I =3I
CB
1
VBE(sat)
0.1 VCE(sat)
0.01
0.1
1 10
IC[A], COLLECTOR CURRENT
100
Figure 2. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
1000
tR
100
tD, VBE(off)=5V
V =125V
CC
I =5I
CB
10
0.1
1
IC[A], COLLECTOR CURRENT
Figure 4. Turn On Time
10
100
10
DC
1
0.1
0.01
1
KSE13006
KSE13007
10 100
VCE[V], COLLECTOR-EMITTER VOLTAGE
1000
Figure 6. Safe Operating Area
Rev. A1, December 2000

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Typical Characteristics (Continued)
100
90
80
70
60
50
40
30
20
10
0
0
25 50 75 100 125 150 175
T [oC], CASE TEMPERATURE
C
Figure 7. Power Derating
©2000 Fairchild Semiconductor International
Rev. A1, December 2000

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Package Demensions
TO-220
9.90 ±0.20
(8.70)
ø3.60 ±0.10
4.50 ±0.20
1.30
+0.10
–0.05
1.27 ±0.10
2.54TYP
[2.54 ±0.20]
1.52 ±0.10
0.80 ±0.10
2.54TYP
[2.54 ±0.20]
0.50
+0.10
–0.05
2.40 ±0.20
10.00 ±0.20
©2000 Fairchild Semiconductor International
Dimensions in Millimeters
Rev. A1, December 2000

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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or In
Design
Preliminary
First Production
No Identification Needed
Full Production
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
©2000 Fairchild Semiconductor International
Rev. E