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POWER TRANSISTOR E13001
SWITCHING REGULATOR APPLICATION
• High speed switching
• Suitable for switching regulator
and motor control
• Case : TO-92 molded plastic body
R
A
B
P
L
F
K
NPN SILICON TRANSISTOR
FEATURES Tc=25oC unless otherwise specified
Parameter
Power dissipation
Collector current
Operating and storage junction temperature range
G
H
V
12 3
N
NC
Symbol
PCM
ICM
TJ, TSTG
TO-92
DIM
INCHES
MIN MAX
MILLIMETERS
MIN MAX
A 0.175 0.205 4.44 5.21
SEATING B 0.290 0.310 7.37 7.87
PLANE
C 0.125 0.165 3.18 4.19
D 0.018 0.022 0.46 0.56
F 0.016 0.019 0.41 0.48
G 0.045 0.055 1.15 1.39
H 0.095 0.105 2.42 2.66
J 0.018 0.024 0.46 0.61
K 0.500 --- 12.70 ---
D
L 0.250 --- 6.35 ---
N 0.080 0.105 2.04 2.66
P --- 0.100 --- 2.54
J R 0.135 --- 3.43 ---
V 0.135 --- 3.43 ---
Value
0.75
0.2
-55 oC to +150 oC
UNIT
W
A
oC
ELECTRICAL CHARACTERISTICS Tc=25oC unless otherwise specified
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter voltage
Transition frequency
Fall time
Storage time
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
ICEO
IEBO
hFE(1)
hFE(2)
VCEsat
VBEsat
VBE
fT
tf
ts
Test conditions
IC=100 A , IE=0
IC=1mA , IB=0
IE=100 A , IC=0
VCB=600V , IE=0
VCE=400V , IB=0
VEB=7V , IC=0
VCE=20V , IC=20mA
VCE=10V , IC=0.25mA
IC=50mA , IB=10mA
IC=50mA , IB=10mA
IE=100mA
VCE=20V , IC=20mA
f=1MHz
IC=50mA , IB1=-IB2=5mA ,
VCC=45V
MIN
600
400
7
10
5
8
MAX
100
200
100
70
UNIT
V
V
V
A
A
A
0.5 V
1.2 V
1.1 V
MHz
0.3 S
1.5 S

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RATINGS AND CHARACTERISTIC CURVES E13001