KSE44H8.pdf 데이터시트 (총 4 페이지) - 파일 다운로드 KSE44H8 데이타시트 다운로드

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KSE44H Series
General Purpose Power Switching Applications
• Low Collector-Emitter Saturation Voltage : VCE(sat) = 1V (Max.) @ 8A
• Fast Switching Speeds
• Complement to KSE45H
1 TO-220
1.Base 2.Collector 3.Emitter
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
Parameter
VCEO
Collector-Emitter Voltage
: KSE44H 1,2
: KSE44H 4,5
: KSE44H 7,8
: KSE44H 10,11
VEBO
IC
ICP
PC
PC
TJ
TSTG
Emitter- Base Voltage
Collector Current (DC)
*Collector Current (Pulse)
Collector Dissipation (TC=25°C)
Collector Dissipation (Ta=25°C)
Junction Temperature
Storage Temperature
Value
30
45
60
80
5
10
20
50
1.67
150
- 55 ~ 150
Units
V
V
V
V
V
A
A
W
W
°C
°C
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
Parameter
Test Condition
ICES
IEBO
hFE
Collector Cut-off Current
Emitter Cut-off Current
*DC Current Gain
: KSE44H 1,4,7,10
: KSE44H 2,5,8,11
VCE = Rated VCEO, VEB = 0
VEB = 5V, IC = 0
VCE = 1V, IC = 2A
VCE(sat)
*Collector-Emitter Saturation Voltage
: KSE44H 1, 4, 7 10
: KSE44H 2, 5, 8,11
VBE (sat)
*Base-Emitter Saturation Voltage
fT Current Gain Bandwidth Product
Cob Output Capacitance
tON Turn ON Time
tSTG
Storage Time
tF Fall Time
* Pulse test: PW300µs, Duty cycle2%
IC = 8A, IB = 0.8A
IC = 8A, IB = 0.4A
IC = 8A, IB = 0.8A
VCE = 10V, IC = 0.5A
VCB = 10V, f = 1MHz
VCC =20V, IC = 5A
IB1 = - IB2 = 0.5A
Min.
35
60
Typ.
50
130
300
500
140
Max.
10
100
Units
µA
µA
1V
1V
1.5 V
MHz
pF
ns
ns
ns
©2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001

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Typical Characteristics
1000
100
V = 1V
CE
10
1
0.01
0.1
1
IC[A], COLLECTOR CURRENT
Figure 1. DC current Gain
10
1000
f=100MHZ
100
10
1 10 100
VCB[V], COLLECTOR-BASE VOLTAGE
Figure 3. Collector Output Capacitance
60
50
40
30
20
10
0
0 25 50 75 100 125 150 175
Tc[oC], CASE TEMPERATURE
Figure 5. Power Derating
©2001 Fairchild Semiconductor Corporation
10
1 VBE(sat)
I = 10 I
CB
0.1
VCE(sat)
0.01
0.01
0.1 1
10
IC[A], COLLECTOR CURRENT
100
Figure 2. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
100
10
DC
1
44H 1,2
44H 4,5
44H 7,8
44H 10,11
10µs
100µs
0.1
1
10 100 1000
V [V], COLLECTOR-EMITTER VOLTAGE
CE
Figure 4. Safe Operating Area
Rev. A1, June 2001

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Package Demensions
TO-220
9.90 ±0.20
(8.70)
ø3.60 ±0.10
4.50 ±0.20
1.30
+0.10
–0.05
1.27 ±0.10
2.54TYP
[2.54 ±0.20]
1.52 ±0.10
0.80 ±0.10
2.54TYP
[2.54 ±0.20]
0.50
+0.10
–0.05
2.40 ±0.20
10.00 ±0.20
©2001 Fairchild Semiconductor Corporation
Dimensions in Millimeters
Rev. A1, June 2001

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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Preliminary
No Identification Needed
Product Status
Formative or In
Design
First Production
Full Production
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
©2001 Fairchild Semiconductor Corporation
Rev. H3