1MB20D-060.pdf 데이터시트 (총 5 페이지) - 파일 다운로드 1MB20D-060 데이타시트 다운로드

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1MB20-060,1MB20D-060,
600V / 20A
Molded Package
Features
· Small molded package
· Low power loss
· Soft switching with low switching surge and noise
· High reliability, high ruggedness (RBSOA, SCSOA etc.)
· Comprehensive line-up
Applications
· Inverter for Motor drive
· AC and DC Servo drive amplifier
· Uninterruptible power supply
Molded IGBT
Maximum ratings and characteristics
Absolute maximum ratings (at Tc=25°C unless otherwise specified)
1MB20-060 / IGBT
Item
Collector-Emitter voltage
Gate-Emitter voltaga
Collector DC
Tc=25°C
current
Tc=100°C
1ms Tc=25°C
Max. power dissipation(IGBT)
Operating temperature
Storage temperature
Screw torque
Symbol
VCES
VGES
IC25
IC100
Icp
PC
Tj
Tstg
-
Rating
600
±20
38
20
152
145
+150
-40 to +150
50
Unit
V
V
A
A
A
W
°C
°C
N·m
Equivalent Circuit Schematic
IGBT
C:Collector
G:Gate
E:Emitter
1MB20D-060 / IGBT+FWD
Item
Collector-Emitter voltage
Gate-Emitter voltaga
Collector DC
Tc=25°C
current
Tc=100°C
1ms Tc=25°C
Max. power dissipation (IGBT)
Max. power dissipation (FWD)
Operating temperature
Storage temperature
Screw torque
Symbol
VCES
VGES
IC25
IC100
Icp
PC
PC
Tj
Tstg
-
Rating
600
±20
38
20
152
145
75
+150
-40 to +150
50
Unit
V
V
A
A
A
W
W
°C
°C
N·m
IGBT + FWD
C:Collector
G:Gate
E:Emitter

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1MB20-060, 1MB20D-060
Molded IGBT
Electrical characteristics (at Tj=25°C unless otherwise specified)
1MB20-060 / IGBT
Item
Symbol
Zero gate voltage collector current
Gate-Emitter leakage current
Gate-Emitter threshold voltage
Collector-Emitter saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time
Turn-off time
ICES
IGES
VGE(th)
VCE(sat)
Cies
Coes
Cres
ton
tr
toff
tf
Characteristics
Min.
Typ.
––
––
5.5 –
––
– 1300
– 300
– 70
––
––
––
––
Max.
1.0
20
8.5
3.0
1.2
0.6
1.0
0.35
1MB20D-060 / IGBT+FWD
Item
Symbol
Zero gate voltage collector current
Gate-Emitter leakage current
Gate-Emitter threshold voltage
Collector-Emitter saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time
Turn-off time
FWD forward on voltage
Reverse recovery time
ICES
IGES
VGE(th)
VCE(sat)
Cies
Coes
Cres
ton
tr
toff
tf
VF
trr
Characteristics
Min.
Typ.
––
––
5.5 –
––
– 1300
– 300
– 70
––
––
––
––
––
––
Max.
1.0
20
8.5
3.0
1.2
0.6
1.0
0.35
3.0
0.3
Conditions
VGE=0V, VCE=600V
VCE=0V, VGE=±20V
VCE=20V, IC=20mA
VGE=15V, IC=20A
VGE=0V
VCE=10V
f=1MHz
VCC=300V IC=20A
VGE=±15V
RG=120 ohm
(Half Bridge)
Unit
mA
µA
V
V
pF
µs
Conditions
Unit
VGE=0V, VCE=600V
mA
VCE=0V, VGE=±20V
µA
VCE=20V, IC=20mA
V
VGE=15V, IC=20A
V
VGE=0V
pF
VCE=10V
f=1MHz
VCC=300V, IC=20A
µs
VGE=±15V
RG=120 ohm
(Half Bridge)
IF=20A, VGE=0V
V
IF=20A, VGE=-10V, di/dt=100A/µs µs
Thermal resistance characteristics
1MB20-060 / IGBT
Item
Symbol
Thermal resistance
Rth(j-c)
1MB20D-060 / IGBT+FWD
Item
Symbol
Thermal resistance
Rth(j-c)
Rth(j-c)
Characteristics
Min.
Typ.
––
Max.
0.86
Conditions
IGBT
Characteristics
Min.
Typ.
––
––
Max.
0.86
1.66
Conditions
IGBT
FWD
Unit
°C/W
Unit
°C/W
°C/W
Outline drawings, mm
1MB20-060, 1MB20D-060
TO-3P

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1MB20-060, 1MB20D-060
Characteristics
1MB20-060,1MB20D-060
Collector current vs. Collector-Emitter voltage
Tj=25°C
50
40
30
20
10
0
012345
Collector-Emitter voltage : VCE [V]
Collector-Emitter vs. Gate-Emitter voltage
Tj=25°C
10
8
6
4
2
0
0
5
10 15
20
Gate-Emitter voltage : VGE [V]
Switching time vs. Collector current
Vcc=300V, RG=120 ohm, VGE=±15V, Tj=25°C
1000
Molded IGBT
Collector current vs. Collector-Emitter voltage
Tj=125°C
50
40
30
20
10
0
012345
Collector-Emitter voltage : VCE [V]
Collector-Emitter vs. Gate-Emitter voltage
Tj=125°C
10
8
6
4
2
0
0
5
10 15
20
Gate-Emitter voltage : VGE [V]
Switching time vs. Collector current
Vcc=300V, RG=160 ohm, VGE=±15V, Tj=125°C
1000
100 100
10
0
10 20
Collector current : Ic [A]
30
10
0
10 20
Collector current : Ic [A]
30

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1MB20-060, 1MB20D-060
Characteristics
1MB20-060,1MB20D-060
Switching time vs. RG
Vcc=300V, Ic=20A, VGE=±15V, Tj=25°C
1000
IGBT Module
Switching time vs. RG
Vcc=300V, Ic=20A, VGE=±15V, Tj=125°C
1000
100 100
10
0 100 200 300 400 500 600
Gate resistance : RG [ohm]
10
0 100 200 300 400 500 600
Gate resistance : RG [ohm]
Dynamic input characteristics
Tj=25°C
500
400
300
200
100
0
0 20
40 60 80
Gate charge : Qg [nC]
25
20
15
10
5
0
100
Capacitance vs. Collector-Emitter voltage
Tj=25°C
1000
100
10
0 5 10 15 20 25 30 35
Collector-Emitter voltage : VCE [V]
Reversed biased safe operating area
+VGE=15V, -VGE <= 15V, Tj <= 125°C, RG >= 120 ohm
50
40
30
20
10
0
0 100 200 300 400 500 600 700
Collector-Emitter voltage : VCE [V]
Typical short circuit capability
Vcc=400V, RG=120 ohm, Tj=125°C
300
250
200
150
100
50
0
5 10 15 20
Gate voltage : VGE [V]
60
50
40
30
20
10
0
25

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1MB20-060, 1MB20D-060
Characteristics
1MB20-060,1MB20D-060
Transient thermal resistance
101
IGBT Module
100
10-1
10-2
10-4
10-3
10-2
Pulse width : PW [sec.]
10-1
1MB20D-060
Reverse recovery time vs. Forward current
-di/dt=60A / µsec
400
100
Reverse recovery current vs. Forward current
-di/dt=60A / µsec
4
300 3
200 2
100 1
0
0 10 20
Forward current : IF [A]
30
Forward current vs. Foeward voltage
50
40
30
20
10
0
0
1.0 2.0 3.0
Forward voltage : VF [V]
4.0
0
0 10 20 30
Forward current : IF [A]
Reverse recovery time characteristics vs. -di/dt
IF=20A, Tj=125°C
500
25
400 20
300 15
200 10
100 5
00
0 50 100 150 200 250 300 350 400
-di/dt [ A / µsec ]