C009T.pdf 데이터시트 (총 4 페이지) - 파일 다운로드 C009T 데이타시트 다운로드

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UMW R
UMW 2300A
UMW 2300N-Channel 20-V(D-S) MOSFET
V(BR)DSS
RDS(on)MAX
  25mΩ@4.5V 
20 V
34.5mΩ@2.5V  
ID
6A
SOT-23
1. GATE
2. SOURCE
3. DRAIN
FEATURE
z TrenchFET Power MOSFET
APPLICATION
z Load Switch for Portable Devices
z DC/DC Converter
MARKING
C009T
Equivalent Circuit
Maximum ratings (Ta=25unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Source-Drain Current(Diode Conduction)
Power Dissipation
Thermal Resistance from Junction to Ambient (t5s)
Operating Junction
Storage Temperature
VDS
VGS
ID
IS
PD
RθJA
TJ
TSTG
Value
20
±12
6
0.6
312.5
150
-55 ~+150
Unit
V
A
W
/W
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UMW R
UMW 2300A
Ta=25 unless otherwise specified
Parameter
Symbol
Test Condition
Static
Drain-source breakdown voltage
Gate-threshold voltage
Gate-body leakage
Zero gate voltage drain current
Drain-source on-resistancea
Forward transconductancea
V(BR)DSS
VGS(th)
IGSS
IDSS
rDS(on)
gfs
VGS = 0V, ID =10µA
VDS =VGS, ID =50µA
VDS =0V, VGS =±8V
VDS =20V, VGS =0V
VGS =4.5V, ID = 6 A
VGS =2.5V, ID =5.2A
VDS =5V, ID =3.6A
Diode forward voltage
VSD IS=0.94A,VGS=0V
Dynamic
Total gate charge
Gate-source charge
Gate-drain charge
Input capacitance b
Output capacitance b
Reverse transfer capacitanceb
Switchingb
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Qg
Qgs
Qgd
Ciss
Coss
Crss
VDS =10V,VGS =4.5V,ID =3.6A
VDS =10V,VGS =0V,f=1MHz
td(on)
tr
td(off)
tf
VDD=10V,
RL=5.5, ID 3.6A,
VGEN=4.5V,Rg=6
Notes :
a. Pulse Test : Pulse width300µs, duty cycle 2%.
b. These parameters have no way to verify.
Min Typ Max Units
20
0.40 1
±100
1
0.021 0.025
0.028 0.034
8
0.74 1.2
V
nA
µA
S
V
7.7 10
0.32 nC
2.1
574
70 pF
60
78.7
128
453
80.9
ns
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2 友台半导体有限公司

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UMW R
Typical Characteristics (TJ =25Noted)
UMW 2300A
www.umw-ic.com
3 友台半导体有限公司

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UMW R
Typical Characteristics (TJ =25Noted)
UMW 2300A
www.umw-ic.com
4 友台半导体有限公司