014N04LS pdf, 014N04LS 데이터시트, 014N04LS 데이타시트

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BSC014N04LS

MOSFET

OptiMOSTMPower-MOSFET,40V

Features

•Optimizedforsynchronousrectification

•Verylowon-stateresistanceRDS(on)

•100%avalanchetested

•Superiorthermalresistance

•N-channel,logiclevel

•QualifiedaccordingtoJEDEC1)fortargetapplications

•Pb-freeleadplating;RoHScompliant

•Halogen-freeaccordingtoIEC61249-2-21

•Highersolderjointreliabilityduetoenlargedsourceinterconnection

Table1KeyPerformanceParameters

Parameter

Value

Unit

VDS 40

RDS(on),max

1.4

mΩ

ID 100 A

Qoss

Qg(0V..10V)

TDSON-8FL(enlargedsourceinterconnection)

S1 8D

S2 7D

S3 6D

G4 5D

Type/OrderingCode

BSC014N04LS

Package

TDSON-8 FL

Marking

014N04LS

RelatedLinks

1) J-STD20 and JESD22

Final Data Sheet

Rev.2.4,2016-05-04

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OptiMOSTMPower-MOSFET,40V

BSC014N04LS

TableofContents

Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

Final Data Sheet

2 Rev.2.4,2016-05-04

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OptiMOSTMPower-MOSFET,40V

BSC014N04LS

1Maximumratings

atTA=25°C,unlessotherwisespecified

Table2Maximumratings

Parameter

Symbol

Continuous drain current

Pulsed drain current2)

Avalanche current, single pulse3)

Avalanche energy, single pulse

Gate source voltage

Power dissipation

Operating and storage temperature

ID,pulse

IAS

EAS

VGS

Ptot

Tj,Tstg

Min.

-20

-55

Values

Typ. Max.

- 100

- 32

- 400

- 50

- 170

- 20

- 96

- 2.5

- 150

Unit Note/TestCondition

VGS=10V,TC=25°C

VGS=10V,TC=100°C

A VGS=4.5V,TC=25°C

VGS=4.5V,TC=100°C

VGS=10V,TA=25°C,RthJA=50K/W1)

A TC=25°C

mJ ID=50A,RGS=25Ω

V-

TC=25°C

TA=25°C,RthJA=50K/W1)

°C

IEC climatic category;

DIN IEC 68-1: 55/150/56

2Thermalcharacteristics

Table3Thermalcharacteristics

Parameter

Symbol

Thermal resistance, junction - case,

bottom

Thermal resistance, junction - case,

top

Device on PCB,

6 cm2 cooling area1)

RthJC

RthJA

Values

Unit Note/TestCondition

Min. Typ. Max.

- 0.8 1.3 K/W -

- - 20 K/W -

- - 50 K/W -

1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain

connection. PCB is vertical in still air.

2) See Diagram 3 for more detailed information

3) See Diagram 13 for more detailed information

Final Data Sheet

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OptiMOSTMPower-MOSFET,40V

BSC014N04LS

3Electricalcharacteristics

Table4Staticcharacteristics

Parameter

Symbol

Drain-source breakdown voltage

Gate threshold voltage

Zero gate voltage drain current

Gate-source leakage current

Drain-source on-state resistance

Gate resistance1)

Transconductance

V(BR)DSS

VGS(th)

IDSS

IGSS

RDS(on)

gfs

Min.

1.2

0.45

120

Values

Typ. Max.

-2

0.1 1

10 100

1.5 1.9

1.1 1.4

0.9 1.8

230 -

Unit Note/TestCondition

V VGS=0V,ID=1mA

V VDS=VGS,ID=250µA

µA

VDS=40V,VGS=0V,Tj=25°C

VDS=40V,VGS=0V,Tj=125°C

nA VGS=20V,VDS=0V

mΩ

VGS=4.5V,ID=50A

VGS=10V,ID=50A

Ω-

S |VDS|>2|ID|RDS(on)max,ID=50A

Table5Dynamiccharacteristics

Parameter

Symbol

Input capacitance1)

Output capacitance1)

Reverse transfer capacitance1)

Turn-on delay time

Ciss

Coss

Crss

td(on)

Rise time

Turn-off delay time

td(off)

Fall time

Min.

Values

Typ. Max.

4300 6020

1200 1680

100 200

35 -

Unit Note/TestCondition

pF VGS=0V,VDS=20V,f=1MHz

VDD=20V,VGS=10V,ID=50A,

RG,ext,ext=1.6Ω

VDD=20V,VGS=10V,ID=50A,

RG,ext,ext=1.6Ω

VDD=20V,VGS=10V,ID=50A,

RG,ext,ext=1.6Ω

VDD=20V,VGS=10V,ID=50A,

RG,ext,ext=1.6Ω

Table6Gatechargecharacteristics2)

Parameter

Symbol

Gate to source charge

Gate charge at threshold

Gate to drain charge1)

Switching charge

Gate charge total1)

Gate plateau voltage

Gate charge total1)

Gate charge total, sync. FET

Output charge1)

Qgs

Qg(th)

Qgd

Qsw

Vplateau

Qg(sync)

Qoss

Min.

Values

Typ. Max.

11 -

6.9 -

9.8 14

14 -

61 85

2.5 -

31 44

24 -

54 76

Unit Note/TestCondition

nC VDD=20V,ID=50A,VGS=0to10V

V VDD=20V,ID=50A,VGS=0to10V

nC VDD=20V,ID=50A,VGS=0to4.5V

nC VDS=0.1V,VGS=0to4.5V

nC VDD=20V,VGS=0V

1) Defined by design. Not subject to production test

2) See ″Gate charge waveforms″ for parameter definition

Final Data Sheet

Rev.2.4,2016-05-04

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OptiMOSTMPower-MOSFET,40V

BSC014N04LS

Table7Reversediode

Parameter

Diode continuous forward current

Diode pulse current

Diode forward voltage

Reverse recovery time1)

Reverse recovery charge

Symbol

IS,pulse

VSD

trr

Qrr

Min.

Values

Typ. Max.

- 96

- 400

0.82 1

32 64

98 -

Unit Note/TestCondition

A TC=25°C

V VGS=0V,IF=50A,Tj=25°C

ns VR=20V,IF=50A,diF/dt=400A/µs

nC VR=20V,IF=50A,diF/dt=400A/µs

1) Defined by design. Not subject to production test

Final Data Sheet

Rev.2.4,2016-05-04