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BSC014N04LS
MOSFET
OptiMOSTMPower-MOSFET,40V
Features
•Optimizedforsynchronousrectification
•Verylowon-stateresistanceRDS(on)
•100%avalanchetested
•Superiorthermalresistance
•N-channel,logiclevel
•QualifiedaccordingtoJEDEC1)fortargetapplications
•Pb-freeleadplating;RoHScompliant
•Halogen-freeaccordingtoIEC61249-2-21
•Highersolderjointreliabilityduetoenlargedsourceinterconnection
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS 40
V
RDS(on),max
1.4
m
ID 100 A
Qoss
54
nC
Qg(0V..10V)
61
nC
TDSON-8FL(enlargedsourceinterconnection)
8
7
65
1
2
34
4
3
2
1
5
67
8
S1 8D
S2 7D
S3 6D
G4 5D
Type/OrderingCode
BSC014N04LS
Package
TDSON-8 FL
Marking
014N04LS
RelatedLinks
-
1) J-STD20 and JESD22
Final Data Sheet
1
Rev.2.4,2016-05-04

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OptiMOSTMPower-MOSFET,40V
BSC014N04LS
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Final Data Sheet
2 Rev.2.4,2016-05-04

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OptiMOSTMPower-MOSFET,40V
BSC014N04LS
1Maximumratings
atTA=25°C,unlessotherwisespecified
Table2Maximumratings
Parameter
Symbol
Continuous drain current
ID
Pulsed drain current2)
Avalanche current, single pulse3)
Avalanche energy, single pulse
Gate source voltage
Power dissipation
Operating and storage temperature
ID,pulse
IAS
EAS
VGS
Ptot
Tj,Tstg
Min.
-
-
-
-
-
-
-
-
-20
-
-
-55
Values
Typ. Max.
- 100
- 100
- 100
- 100
- 32
- 400
- 50
- 170
- 20
- 96
- 2.5
- 150
Unit Note/TestCondition
VGS=10V,TC=25°C
VGS=10V,TC=100°C
A VGS=4.5V,TC=25°C
VGS=4.5V,TC=100°C
VGS=10V,TA=25°C,RthJA=50K/W1)
A TC=25°C
A TC=25°C
mJ ID=50A,RGS=25
V-
W
TC=25°C
TA=25°C,RthJA=50K/W1)
°C
IEC climatic category;
DIN IEC 68-1: 55/150/56
2Thermalcharacteristics
Table3Thermalcharacteristics
Parameter
Symbol
Thermal resistance, junction - case,
bottom
Thermal resistance, junction - case,
top
Device on PCB,
6 cm2 cooling area1)
RthJC
RthJC
RthJA
Values
Unit Note/TestCondition
Min. Typ. Max.
- 0.8 1.3 K/W -
- - 20 K/W -
- - 50 K/W -
1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
2) See Diagram 3 for more detailed information
3) See Diagram 13 for more detailed information
Final Data Sheet
3 Rev.2.4,2016-05-04

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OptiMOSTMPower-MOSFET,40V
BSC014N04LS
3Electricalcharacteristics
Table4Staticcharacteristics
Parameter
Symbol
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Gate resistance1)
Transconductance
V(BR)DSS
VGS(th)
IDSS
IGSS
RDS(on)
RG
gfs
Min.
40
1.2
-
-
-
-
-
0.45
120
Values
Typ. Max.
--
-2
0.1 1
10 100
10 100
1.5 1.9
1.1 1.4
0.9 1.8
230 -
Unit Note/TestCondition
V VGS=0V,ID=1mA
V VDS=VGS,ID=250µA
µA
VDS=40V,VGS=0V,Tj=25°C
VDS=40V,VGS=0V,Tj=125°C
nA VGS=20V,VDS=0V
m
VGS=4.5V,ID=50A
VGS=10V,ID=50A
-
S |VDS|>2|ID|RDS(on)max,ID=50A
Table5Dynamiccharacteristics
Parameter
Symbol
Input capacitance1)
Output capacitance1)
Reverse transfer capacitance1)
Turn-on delay time
Ciss
Coss
Crss
td(on)
Rise time
tr
Turn-off delay time
td(off)
Fall time
tf
Min.
-
-
-
-
-
-
-
Values
Typ. Max.
4300 6020
1200 1680
100 200
8-
9-
35 -
7-
Unit Note/TestCondition
pF VGS=0V,VDS=20V,f=1MHz
pF VGS=0V,VDS=20V,f=1MHz
pF VGS=0V,VDS=20V,f=1MHz
ns
VDD=20V,VGS=10V,ID=50A,
RG,ext,ext=1.6
ns
VDD=20V,VGS=10V,ID=50A,
RG,ext,ext=1.6
ns
VDD=20V,VGS=10V,ID=50A,
RG,ext,ext=1.6
ns
VDD=20V,VGS=10V,ID=50A,
RG,ext,ext=1.6
Table6Gatechargecharacteristics2)
Parameter
Symbol
Gate to source charge
Gate charge at threshold
Gate to drain charge1)
Switching charge
Gate charge total1)
Gate plateau voltage
Gate charge total1)
Gate charge total, sync. FET
Output charge1)
Qgs
Qg(th)
Qgd
Qsw
Qg
Vplateau
Qg
Qg(sync)
Qoss
Min.
-
-
-
-
-
-
-
-
-
Values
Typ. Max.
11 -
6.9 -
9.8 14
14 -
61 85
2.5 -
31 44
24 -
54 76
Unit Note/TestCondition
nC VDD=20V,ID=50A,VGS=0to10V
nC VDD=20V,ID=50A,VGS=0to10V
nC VDD=20V,ID=50A,VGS=0to10V
nC VDD=20V,ID=50A,VGS=0to10V
nC VDD=20V,ID=50A,VGS=0to10V
V VDD=20V,ID=50A,VGS=0to10V
nC VDD=20V,ID=50A,VGS=0to4.5V
nC VDS=0.1V,VGS=0to4.5V
nC VDD=20V,VGS=0V
1) Defined by design. Not subject to production test
2) See Gate charge waveformsfor parameter definition
Final Data Sheet
4
Rev.2.4,2016-05-04

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OptiMOSTMPower-MOSFET,40V
BSC014N04LS
Table7Reversediode
Parameter
Diode continuous forward current
Diode pulse current
Diode forward voltage
Reverse recovery time1)
Reverse recovery charge
Symbol
IS
IS,pulse
VSD
trr
Qrr
Min.
-
-
-
-
-
Values
Typ. Max.
- 96
- 400
0.82 1
32 64
98 -
Unit Note/TestCondition
A TC=25°C
A TC=25°C
V VGS=0V,IF=50A,Tj=25°C
ns VR=20V,IF=50A,diF/dt=400A/µs
nC VR=20V,IF=50A,diF/dt=400A/µs
1) Defined by design. Not subject to production test
Final Data Sheet
5
Rev.2.4,2016-05-04