OptiMOSTMPower-MOSFET,40V
BSC014N04LS
3Electricalcharacteristics
Table4Staticcharacteristics
Parameter
Symbol
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Gate resistance1)
Transconductance
V(BR)DSS
VGS(th)
IDSS
IGSS
RDS(on)
RG
gfs
Min.
40
1.2
-
-
-
-
-
0.45
120
Values
Typ. Max.
--
-2
0.1 1
10 100
10 100
1.5 1.9
1.1 1.4
0.9 1.8
230 -
Unit Note/TestCondition
V VGS=0V,ID=1mA
V VDS=VGS,ID=250µA
µA
VDS=40V,VGS=0V,Tj=25°C
VDS=40V,VGS=0V,Tj=125°C
nA VGS=20V,VDS=0V
mΩ
VGS=4.5V,ID=50A
VGS=10V,ID=50A
Ω-
S |VDS|>2|ID|RDS(on)max,ID=50A
Table5Dynamiccharacteristics
Parameter
Symbol
Input capacitance1)
Output capacitance1)
Reverse transfer capacitance1)
Turn-on delay time
Ciss
Coss
Crss
td(on)
Rise time
tr
Turn-off delay time
td(off)
Fall time
tf
Min.
-
-
-
-
-
-
-
Values
Typ. Max.
4300 6020
1200 1680
100 200
8-
9-
35 -
7-
Unit Note/TestCondition
pF VGS=0V,VDS=20V,f=1MHz
pF VGS=0V,VDS=20V,f=1MHz
pF VGS=0V,VDS=20V,f=1MHz
ns
VDD=20V,VGS=10V,ID=50A,
RG,ext,ext=1.6Ω
ns
VDD=20V,VGS=10V,ID=50A,
RG,ext,ext=1.6Ω
ns
VDD=20V,VGS=10V,ID=50A,
RG,ext,ext=1.6Ω
ns
VDD=20V,VGS=10V,ID=50A,
RG,ext,ext=1.6Ω
Table6Gatechargecharacteristics2)
Parameter
Symbol
Gate to source charge
Gate charge at threshold
Gate to drain charge1)
Switching charge
Gate charge total1)
Gate plateau voltage
Gate charge total1)
Gate charge total, sync. FET
Output charge1)
Qgs
Qg(th)
Qgd
Qsw
Qg
Vplateau
Qg
Qg(sync)
Qoss
Min.
-
-
-
-
-
-
-
-
-
Values
Typ. Max.
11 -
6.9 -
9.8 14
14 -
61 85
2.5 -
31 44
24 -
54 76
Unit Note/TestCondition
nC VDD=20V,ID=50A,VGS=0to10V
nC VDD=20V,ID=50A,VGS=0to10V
nC VDD=20V,ID=50A,VGS=0to10V
nC VDD=20V,ID=50A,VGS=0to10V
nC VDD=20V,ID=50A,VGS=0to10V
V VDD=20V,ID=50A,VGS=0to10V
nC VDD=20V,ID=50A,VGS=0to4.5V
nC VDS=0.1V,VGS=0to4.5V
nC VDD=20V,VGS=0V
1) Defined by design. Not subject to production test
2) See ″Gate charge waveforms″ for parameter definition
Final Data Sheet
4
Rev.2.4,2016-05-04