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n-channel JFETs
designed for • • •
Analog Switches
Commutators
Choppers
H
Siliconix
Performance Curves NCB
See Section 4
BENEFITS
Low Insertion Loss
rOS(on) < 50 on (U202)
Good Off-Isolation
10(off) < 1 nA
ABSOLUTE MAXIMUM RATINGS (25°C)
Gate-Drain or Gate-Source Voltage ............... -30 V
Gate Current .....•......................... SOmA
Total Device Dissipation at 25°C Case Temperature
(Derate 10 mWrC) ......................... 1.8W
Storage Temperature Range .............. -65 to +200°C
Lead Temperature
(1/16" from case for 10 seconds) ............•. 300°C
TO-tS
See Section 6
.~: j \G.C
0
ELECTRICAL CHARACTERISTICS (25°C unless otherwise noted)
Characteristic
1
1-"2
-3
S
T
-4 A
T
-5
i
C
6
IGSS
BVGSS
VGS(off)
10(011)
lOSS
Gate Reverse Current
Gate-Source Breakdown Voltage
Gate-Source Cutoff Voltage
Dram Cutoff Current
Saturation Drain Current (Note 1)
-7 rds(on)
-8
0
Y
C1SS
N
9 Crss
Draln-~ource ON Resistance
Common-Source Input
Capacitance (Note 1)
Common-Source Reverse Transfer
Capacitance
U200
Min Max
-1
-1
-30
-0.5 -3
1
1
U201
Min Max
-I
-1
-30
-1.5 -5
i
1
U202
Min Max
-I
-1
-30
-3.5 -10
1
1
Unit
nA
JlA
V
nA
JlA
Test Conditions
VGS = -20 V, VOS = 0
IG=-IJlA,VOS=O
VOS = 20 V, 10 = 10 nA
I
150°C
VOS = 10 V, VGS = -12 V
150°C
3 25 15 75
30 150 mA VOS = 20 V, VGS = 0
150 75
50 ohm VGS = 0,10 = 0
f = 1 kHz
30 30
88
30 VOS=20V,VGS=0
pF
8 VOS=O VGS=-12V
f= 1 MHz
NOTE:
1. Pu1se test required, pulsew,dth = 300 Jlsec, duty cycle .;; 3%.
NCB
3-116
Silicanix