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Shantou Huashan Electronic Devices Co.,Ltd.
PNP SILICON TRANSISTOR
H1068
APPLICATIONS
audio amplifier.
ABSOLUTE MAXIMUM RATINGSTa=25℃)
TO-92
Tstg——Storage Temperature………………………… -55~150
Tj——Junction Temperature…………………………………150
PC——Collector Dissipation…………………………………750mW
VCBO——Collector-Base Voltage………………………………-20V
VCEO——Collector-Emitter Voltage……………………………-16V
1EmitterE
2CollectorC
3BaseB
VEBO——Emitter-Base Voltage………………………………-6V
IC——Collector Current DC)…………………………………… -2A
ICP——Collector CurrentPulse)………………………………-3A
ELECTRICAL CHARACTERISTICSTa=25℃)
Symbol
BVCBO
BVCEO
BVEBO
HFE1
HFE2
VCE(sat1)
VCE(sat2)
VCE(sat3)
VBE
ICBO
IEBO
fT
Cob
Characteristics
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
DC Current Gain
DC Current Gain
Collector- Emitter Saturation Voltage
Collector- Emitter Saturation Voltage
Collector- Emitter Saturation Voltage
Base-Emitter Voltage
Collector Cut-off Current
Emitter Cut-off Current
Current Gain-Bandwidth Product
Output Capacitance
hFE Classification
Min Typ
-20
-16
-6
135 350
100
-0.25
-0.31
-0.33
-550 -600
100 180
60
Max Unit
Test Conditions
V IC=-100μA, IE=0
V IC=-10mA, IB=0
V IE=-1mAIC=0
650 VCE=-2V, IC=-100mA
VCE=-2V, IC=-1.5A
-0.4 V IC=-1A, IB=-10mA
-0.5 V IC=-1.5A, IB=-75mA
-0.5 V IC=-1.5A, IB=-20mA
-650 mV VCE=-6V, IC=-5.0mA
-100 nA VCB=-16V, IE=0
-100 nA VEB=-6V, IC=0
MHz VCE=-10V, IC=-50mA
pF VCB=-10V, IE=0f=1MHz
L
135—270
K
200—400
U
300—650