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Shantou Huashan Electronic Devices Co.,Ltd.
NPN SILICON TRANSISTOR
H128M
APPLICATIONS
Suitable For Low Voltage Large Current Drivers
ABSOLUTE MAXIMUM RATINGS Ta=25
Tstg Storage Temperature
-55~150
Tj Junction Temperature
150
PC Collector Dissipation
40 0mW
VCBO Collector-Base Voltage
20V
VCEO Collector-Emitter Voltage
15V
VEBO Emitter- Base Voltage
6. 5 V
IC Collector Current
1. 5A
TO-92
1 Emitter E
2 Collector C
3 Base B
ELECTRICAL CHARACTERISTICS Ta=25
Symbol
Characteristics
Min Typ Max Unit
Test Conditions
BVCBO
BVCEO
BVEBO
HFE
VCE(sat)
ICBO
IEBO
fT
Cob
Ron
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
DC Current Gain
Collector- Emitter Saturation Voltage
Collector Cut-off Current
Emitter Cut-off Current
Current Gain-Bandwidth Product
Output Capacitance
On Resistance
IC=50 A, IE=0
IC=1mA, IB=0
IE=50 A IC=0
VCE=1V, IC=100mA
IC=500mA, IB=50mA
A VCB=20V, IE=0
A VEB=6V, IC=0
VCE=5V, IC=50mA
VCB=10V, IE=0 f=1
IB=1mA