H1266.pdf 데이터시트 (총 2 페이지) - 파일 다운로드 H1266 데이타시트 다운로드

No Preview Available !

Shantou Huashan Electronic Devices Co.,Ltd.
PNP SILICON TRANSISTOR
H1266
APPLICATIONS
General Purpose Application.
Switching Application.
ABSOLUTE MAXIMUM RATINGSTa=25℃)
Tstg——Storage Temperature………………………… -55~150
Tj——Junction Temperature…………………………………150
PC——Collector Dissipation…………………………………400mW
VCBO——Collector-Base Voltage………………………………-50V
VCEO——Collector-Emitter Voltage……………………………-50V
VEBO——Emitter-Base Voltage………………………………-5V
IC——Collector Current………………………………………-150mA
Ib——Base Current……………………………………………-50mA
TO-92
1EmitterE
2CollectorC
3BaseB
ELECTRICAL CHARACTERISTICSTa=25℃)
Symbol
Characteristics
Min Typ Max Unit
Test Conditions
BVCBO Collector-Base Breakdown Voltage
-50
V IC=-100μA, IE=0
BVCEO Collector-Emitter Breakdown Voltage
-50
V IC=-1mA, IB=0
BVEBO Emitter-Base Breakdown Voltage
-5
V IE=-10μAIC=0
HFE1DC Current Gain
70 400 VCE=-6V, IC=-2mA
HFE2DC Current Gain
25
VCE=-6V, IC=-150mA
VCE(sat) Collector- Emitter Saturation Voltage
-0.1 -0.3 V IC=-100mA, IB=-10mA
VBE(sat) Base-Emitter Saturation Voltage
-1.1 V IC=-100mA, IB=-10mA
ICBO Collector Cut-off Current
-100 nA VCB=-50V, IE=0
IEBO Emitter Cut-off Current
-100 nA VEB=-5V, IC=0
fT Current Gain-Bandwidth Product
80
MHz VCE=-10V, IC=-10mA
Cob Output Capacitance
4 7 pF VCB=-50V, IE=0f=1MHz
hFE Classification
O
70—140
Y
120—240
GR
200—400

No Preview Available !

Shantou Huashan Electronic Devices Co.,Ltd.
H1266