H1300.pdf 데이터시트 (총 2 페이지) - 파일 다운로드 H1300 데이타시트 다운로드

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Shantou Huashan Electronic Devices Co.,Ltd.
PNP SILICON TRANSISTOR
H1300
STROBE FLASH APPLICATIONS
MEDIUM POWER AMPLIFIER APPLICATIONS
ABSOLUTE MAXIMUM RATINGS Ta=25
TO-92
Tstg Storage Temperature
Tj Junction Temperature
PC Collector Dissipation
VCBO Collector-Base Voltage
VCEO Collector-Emitter Voltage
VEBO Emitter-Base Voltage
IC Collector Current
ICP Collector Current Pulse
-55~150
150
750mW
-20V
-10V
-6V
-2A
-5A
1 Emitter E
2 Collector C
3 Base B
ELECTRICAL CHARACTERISTICS Ta=25
Symbol
Characteristics
Min Typ Max Unit
Test Conditions
BVCBO Collector-Base Breakdown Voltage
-20
V IC=-100 A, IE=0
BVCEO Collector-Emitter Breakdown Voltage
-10
V IC=-10mA, IB=0
BVEBO Emitter-Base Breakdown Voltage
-6
V IE=-1mA IC=0
HFE(1) DC Current Gain
140 600 VCE=-1V, IC=-500mA
HFE(2)
70 VCE=-1V, IC=-2A
VCE(sat) Collector- Emitter Saturation Voltage
-0.5 V IC=-2A, IB=-50mA
VBE Base-Emitter Voltage
-1.5 V VCE=-1V, IC=-2A
ICBO Collector Cut-off Current
-100 nA VCB=-20V, IE=0
ICEO Collector Cut-off Current
-100 nA VCE=-10V, IB=0
IEBO Emitter Cut-off Current
-100 nA VEB=-6V, IC=0
fT Current Gain-Bandwidth Product
140 MHz VCE=-1V, IC=-0.5A
Cob Output Capacitance
50 pF VCB=-10V, IE=0 f=1MHz
hFE Classification
Y
140 280
GR
200 400
BL
300 600

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Shantou Huashan Electronic Devices Co.,Ltd.
H1300