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Shantou Huashan Electronic Devices Co.,Ltd.
PNP SILICON TRANSISTOR
H1020
POWER AMPLIFIER APPLICATIONS
POWER SWITCHING APPLICATIONS
ABSOLUTE MAXIMUM RATINGSTa=25℃)
Tstg——Storage Temperature………………………… -55~150
Tj——Junction Temperature…………………………………150
PC——Collector Dissipation…………………………………900mW
VCBO——Collector-Base Voltage………………………………-50V
VCEO——Collector-Emitter Voltage……………………………-50V
VEBO——Emitter-Base Voltage………………………………-5V
IC——Collector Current……………………………………-2mA
TO-92
1EmitterE
2CollectorC
3BaseB
ELECTRICAL CHARACTERISTICSTa=25℃)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
HFE(1)
HFE(2)
VCE(sat)
VBE(sat)
fT
Cob
tON
tSTG
tF
Characteristics
Min Typ Max Unit
Test Conditions
Collector-Base Breakdown Voltage
-50
V IC=-1mA, IE=0
Collector-Emitter Breakdown Voltage
-50
V IC=-10mA, IB=0
Emitter-Base Breakdown Voltage
-5
V IE=-1mAIC=0
Collector Cut-off Current
-100 nA VCB=-50V, IE=0
Emitter Cut-off Current
-100 nA VEB=-5V, IC=0
DC Current Gain
70 240 VCE=-2V, IC=-0.5A
40 VCE=-2V, IC=-1.5A
Collector- Emitter Saturation Voltage
-0.5 V IC=-1A, IB=-0.05A
Base-Emitter Saturation Voltage
-1.2 V IC=-1A, IB=-0.05A
Current Gain-Bandwidth Product
Output Capacitance
100 MHz VCE=-2V, IC=-0.5A
40 pF VCB=-10V, IE=0f=1MHz
Turn-on Time
0.1 μS
Storage Time
1.0 μS
Fall Time
0.1 μS
hFE Classification
O
70—140
Y
120—240

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Shantou Huashan Electronic Devices Co.,Ltd.
H1020

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Shantou Huashan Electronic Devices Co.,Ltd.
H1020