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November 2014
FJP13007
High Voltage Fast-Switching NPN Power Transistor
Features
• High Voltage High Speed Power Switch Application
• High Voltage Capability
• High Switching Speed
• Suitable for Electronic Ballast and Switching Mode Power Supply
1 TO-220
1.Base 2.Collector 3.Emitter
Ordering Information
Part Number
FJP13007TU
FJP13007H1TU
FJP13007H1TU_F080
FJP13007H2TU
FJP13007H2TU_F080
Top Mark
J13007
J13007-1
J13007-1
J13007-2
J13007-2
Package
TO-220 3L (Dual Gauge)
TO-220 3L (Single Gauge)
TO-220 3L (Dual Gauge)
TO-220 3L (Dual Gauge)
TO-220 3L (Dual Gauge)
Packing Method
Rail
Rail
Rail
Rail
Rail
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TC = 25°C unless otherwise noted.
Symbol
Parameter
Value
Unit
VCBO
VCEO
VEBO
IC
ICP
IB
PC
TJ
TSTG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current (DC)
Collector Dissipation (TC = 25°C)
Junction Temperature
Storage Temperature Range
700
400
9
8
16
4
80
150
-65 to 150
V
V
V
A
A
A
W
°C
°C
© 2005 Fairchild Semiconductor Corporation
FJP13007 Rev. 1.1.0
www.fairchildsemi.com

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Electrical Characteristics
Values are at TC = 25°C unless otherwise noted.
Symbol
BVCEO
IEBO
hFE1
hFE2
VCE(sat)
VBE(sat)
fT
Cob
tON
tSTG
tF
Parameter
Collector-Emitter Breakdown Voltage
Emitter Cut-Off Current
DC Current Gain(1)
DC Current Gain(1)
Collector-Emitter Saturation Voltage
Collector-Base Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
Turn-On Time
Storage Time
Fall Time
Conditions
IC = 10 mA, IB = 0
VEB = 9 V, IC = 0
VCE = 5 V, IC = 2 A
VCE = 5 V, IC = 5 A
IC = 2 A, IB = 0.4 A
IC = 5 A, IB = 1 A
IC = 8 A, IB = 2 A
IC = 2 A, IB = 0.4 A
IC = 5 A, IB = 1 A
VCE = 10 V, IC = 0.5 A
VCB = 10 V, f = 0.1 MHz
VCC = 125 V, IC = 5 A,
IB1 = -IB2 = 1 A,
RL = 25 Ω
Note:
1. Pulse test: pw ≤ 300 μs, duty cycle ≤ 2%.
Min.
400
8
5
4
Typ.
110
Max.
1
60
30
1.0
2.0
3.0
1.2
1.6
1.6
3.0
0.7
Unit
V
mA
V
V
MHz
pF
μs
μs
μs
hFE Classification
Classification
hFE1
H1
15 ~ 28
H2
26 ~ 39
© 2005 Fairchild Semiconductor Corporation
FJP13007 Rev. 1.1.0
2
www.fairchildsemi.com

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Typical Performance Characteristics
100
VCE = 5V
10
1
0.1 1
IC[A], COLLECTOR CURRENT
Figure 1. DC Current Gain
10
1000
100
10
1
0.1 1 10 100 1000
VCB[V], COLLECTOR-BASE VOLTAGE
Figure 3. Collector Output Capacitance
10000
1000
VCC=125V
IC=5IB
tSTG
100 tF
10
0.1
1
IC[A], COLLECTOR CURRENT
Figure 5. Turn-Off Time
10
10
IC = 3 IB
1
VBE(sat)
0.1 VCE(sat)
0.01
0.1
1 10
IC[A], COLLECTOR CURRENT
Figure 2. Saturation Voltage
100
1000
tR
100
tD, VBE(off)=5V
VCC=125V
IC=5IB
10
0.1
1
IC[A], COLLECTOR CURRENT
Figure 4. Turn-On Time
10
100
10
DC
1
10μs
1ms 100μs
0.1
0.01
1
10 100 1000
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 6. Forward Biased Safe Operating Area
© 2005 Fairchild Semiconductor Corporation
FJP13007 Rev. 1.1.0
3
www.fairchildsemi.com

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Typical Performance Characteristics (Continued)
100
Vcc=50V,
IB1=1A, IB2 = -1A
L = 1mH
10
1
0.1
0.01
10
100 1000
VCE[V], COLLECTOR-EMITTER VOLTAGE
10000
Figure 7. Reverse Biased Safe Operating Area
100
90
80
70
60
50
40
30
20
10
0
0 25 50 75 100 125 150 175
TC[oC], CASE TEMPERATURE
Figure 8. Power Derating
© 2005 Fairchild Semiconductor Corporation
FJP13007 Rev. 1.1.0
4
www.fairchildsemi.com

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Physical Dimensions
Figure 9. TO-220, MOLDED, 3LEAD, JEDEC VARIATION AB
© 2005 Fairchild Semiconductor Corporation
FJP13007 Rev. 1.1.0
5
www.fairchildsemi.com