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INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
2SK1358
DESCRIPTION
·Drain Current ID= 9A@ TC=25
·Drain Source Voltage-
: VDSS= 900V(Min)
·Fast Switching Speed
APPLICATIONS
·Designed for high voltage, high speed power switching
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL ARAMETER
VALUE
UNIT
VDSS
VGS
ID
Ptot
Tj
Tstg
Drain-Source Voltage (VGS=0)
Gate-Source Voltage
900
±30
Drain Current-continuous@ TC=25
9
Total Dissipation@TC=25
150
Max. Operating Junction Temperature
150
Storage Temperature Range
-55~150
V
V
A
W
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c
Rth j-a
Thermal Resistance,Junction to Case
0.833 /W
Thermal Resistance,Junction to Ambient 50 /W
isc websitewww.iscsemi.cn
1 isc & iscsemi is registered trademark
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INCHANGE Semiconductor
isc N-Channel Mosfet Transistor
isc Product Specification
2SK1358
·ELECTRICAL CHARACTERISTICS (TC=25)
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID= 10mA
VGS(th) Gate Threshold Voltage
VDS=10 VGS; ID=1mA
RDS(on) Drain-Source On-stage Resistance VGS=10V; ID=4A
IGSS Gate Source Leakage Current
VGS= ±25V;VDS= 0
IDSS Zero Gate Voltage Drain Current VDS=720V; VGS= 0
VSD Diode Forward Voltage
IF=9A; VGS=0
MIN TYP MAX UNIT
900 V
1.5 3.5 V
1.1 1.4
Ω
±100 nA
300 uA
2.0 V
tr Rise time
25 50 ns
ton Turn-on time
tf Fall time
toff Turn-off time
VGS=10V;ID=4A;RL=100Ω
40 80
20 40
100 200
ns
ns
ns
isc websitewww.iscsemi.cn
2 isc & iscsemi is registered trademark
PDF pdfFactory Pro
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