KZT958.pdf 데이터시트 (총 3 페이지) - 파일 다운로드 KZT958 데이타시트 다운로드

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SMD Type
Transistors
PNP Transistors
FZT958 (KZT958)
Features
Collector Current Capability IC=-0.5A
Collector Emitter Voltage VCEO=-400V
SOT-223
6.50±0.2
3.00±0.1
4
Unit:mm
123
2.30 (typ)
4.60 (typ)
0.84 (max)
0.66 (min)
0.250
Gauge Plane
1.Base
2.Collector
3.Emitter
4.Collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Current - Pulse
Collector Power Dissipation
Junction Temperature
Storage Temperature range
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
TJ
Tstg
Rating
-400
-400
-6
-0.5
-1.5
3
150
-55 to 150
Unit
V
A
W
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SMD Type
Transistors
PNP Transistors
FZT958 (KZT958)
Electrical Characteristics Ta = 25
Parameter
Collector- base breakdown voltage
Collector-emitter breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Collector cut-off current
Emitter cut-off current
R1KΩ
Collector-emitter saturation voltage
Base - emitter saturation voltage
Base - emitter turn-on voltage
DC current gain
Turn-on time
Turn-off time
Collector output capacitance
Transition frequency
Symbol
Test Conditions
VCBO Ic= -100 μAIE=0
VCER Ic= -100 μA, RB1KΩ
VCEO Ic= -10 mAIB=0
VEBO IE= -100μAIC=0
ICBO
VCB= -300 V , IE=0
VCB= -300 V , IE=0 , Ta = 100
VCE= -300 V , IE=0
ICER
VCE= -300 V , IE=0 , Ta = 100
IEBO VEB= -6V , IC=0
IC=-10 mA, IB=-1mA
VCE(sat) IC=-100 mA, IB=-10mA
IC=-500 mA, IB=-100mA
VBE(sat) IC=-500 mA, IB=-100mA
VBE(on) VCE= -10V, IC= -0.5A
VCE= -10V, IC= -10mA
hFE VCE= -10V, IC= -500mA
VCE= -10V, IC= -1A
ton IC=-500mA, IB1=-50mA
toff IB2=50mA, VCC=-100V
Cob VCB= -20V,f=1MHz
fT VCE= -10V, IC= -100mA,f=50MHz
Note.Measured under pulsed conditions. Pulse width=300us. Duty cycle 2%
Min
-400
-400
-400
-6
100
100
10
Typ
104
2400
19
85
Max
-50
-1
-50
-1
-10
-150
-200
-400
-0.95
-0.84
300
Unit
V
nA
uA
nA
uA
nA
mV
V
ns
pF
MHz
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SMD Type
Typical Characterisitics
PNP Transistors
FZT958 (KZT958)
Transistors
µ
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