J113 pdf, J113 데이터시트, J113 데이타시트

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J111 / J112 / J113 / MMBFJ111 / MMBFJ112 /

MMBFJ113

N-Channel Switch

Features

• This device is designed for low level analog switching,

sample and hold circuits and chopper stabilized amplifiers.

• Sourced from process 51

• Source & Drain are interchangeable.

TO-92

Figure 1. J111 / J112 / J113 Device Package

Ordering Information

Part Number

J111

J111-D26Z

J111-D74Z

J112

J112-D26Z

J112-D27Z

J112-D74Z

J113

J113-D74Z

J113-D75Z

MMBFJ111

MMBFJ112

MMBFJ113

Top Mark

J111

J112

J113

SOT-23

Note: Source & Drain

D are interchangeable

Figure 2. MMBFJ111 / MMBFJ112 / MMBFJ113

Device Package

Package

TO-92 3L

SOT-23 3L

Packing Method

Bulk

Tape and Reel

Ammo

Bulk

Tape and Reel

Ammo

Bulk

Ammo

Tape and Reel

October-2017, Rev. 2

Publication Order Number:

MMBFJ113/D

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Absolute Maximum Ratings(1), (2)

Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-

ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-

tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The

absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.

Symbol

Parameter

Value

Unit

VDG

VGS

IGF

TJ, TSTG

Drain-Gate Voltage

Gate-Source Voltage

Forward Gate Current

Operating and Storage Junction Temperature Range

-35

-55 to 150

°C

Notes:

1. These ratings are based on a maximum junction temperature of 150°C.

2. These are steady-state limits. ON Semiconductor should be consulted on applications involving pulsed or low-

duty-cycle operations.

Thermal Characteristics

Values are at TA = 25°C unless otherwise noted.

Max.

Symbol

Parameter

J111 / J112 /

J113(3)

MMBFJ111 /

MMBFJ112 /

MMBFJ113(4)

Unit

Total Device Dissipation

PD Derate Above 25°C

625 350 mW

5.0 2.8 mW/°C

RθJC

RθJA

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient

125 °C/W

200 357 °C/W

Notes:

3. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size.

4. Device mounted on FR-4 PCB 36mm × 18mm × 1.5mm; mounting pad for the collector lead minimum 6cm2.

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Electrical Characteristics

Values are at TA = 25°C unless otherwise noted.

Symbol

Parameter

Conditions

Off Characteristics

V(BR)GSS Gate-Source Breakdown Voltage

IGSS Gate Reverse Current

IG = -1.0 μA, VDS = 0

VGS = -15 V, VDS = 0

VGS(off) Gate-Source Cut-Off Voltage

VDS = 15 V, ID = 1.0 μA

111

112

113

ID(off) Drain Cutoff Leakage Current

On Characteristics

VDS = 5.0 V, VGS = -10 V

IDSS Zero-Gate Voltage Drain Current(5) VDS = 15 V, VGS = 0

111

112

113

rDS(on) Drain-Source On Resistance

VDS ≤ 0.1 V, VGS = 0

111

112

113

Small Signal Characteristics

Cdg(on)

Csg(on)

Cdg(off)

Csg(off)

Drain-Gate &Source-Gate On

Capacitance

Drain-Gate Off Capacitance

Source-Gate Off Capacitance

VDS = 0, VGS = 0, f = 1.0 MHz

VDS = 0, VGS = -10 V, f = 1.0 MHz

Note:

5. Pulse test: pulse width ≤ 300 μs, duty cycle ≤ 2%.

Min.

-35

-3.0

-1.0

-0.5

5.0

2.0

Max. Unit

-1.0

-10.0

-5.0

-3.0

1.0

50 Ω

100

28 pF

5.0 pF

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Typical Performance Characteristics

V GS = 0 V

- 0.2 V

TA = 25°C

TYP V GS(off) = - 2.0 V

- 0.4 V

- 0.6 V

- 0.8 V

- 1.0 V

- 1.4 V

- 1.2 V

0 0.4 0.8 1.2 1.6 2

VDS - DRAIN-SOURCE VOLTAGE (V)

Figure 3. Common Drain-Source

VGS(off) = - 3.0 V

- 55°C

25°C

30 125°C

VGS(off) = - 2.0 V

125°C

20 25°C

- 55°C

10 V DS = 15 V

0 -1 -2 -3

VGS - GATE-SOURCE VOLTAGE (V)

Figure 5. Transfer Characteristics

VGS(off) = - 3.0 V

- 55°C

25°C

125°C

VGS(off) = - 2.0 V

- 55°C

25°C

125°C

V DS = 15 V

0 -1 -2

VGS - GATE-SOURCE VOLTAGE (V)

-3

Figure 7. Transfer Characteristics

100

r DS

100

20 g fs

_50.5

I DSS

I DSS , g fs @ VDS = 15V,

V GS = 0 PULSED

r DS @ 1.0 mA, VGS = 0

V GS(off) @ V DS = 15V,

I D = 1.0 nA

_1 _2

VGS (OFF) - GATE CUTOFF VOLTAGE (V)

Figure 4. Parameter Interactions

VGS(off) = - 1.6 V

- 55°C

12 25°C

125°C

V DS = 15 V

8 VGS(off) = - 1.1 V

125°C

25°C

4 - 55°C

0 -0.5 -1 -1.5

VGS - GATE-SOURCE VOLTAGE (V)

Figure 6. Transfer Characteristics

VGS(off) = - 1.6 V

- 55°C

20 25°C

125°C

V DS = 15 V

VGS(off) = - 1.1 V

- 55°C

25°C

125°C

0 -0.5 -1 -1.5

VGS - GATE-SOURCE VOLTAGE (V)

Figure 8. Transfer Characteristics

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Typical Performance Characteristics (Continued)

100

125°C V GS(off)

TYP = - 2.0V

50 25°C

125°C

- 55°C

V GS(off)

TYP = - 7.0V

20 25°C r DS @ V GS = 0

- 55°C

5 10 20

I D - DRAIN CURRENT (mA)

100

Figure 9. On Resistance vs. Drain Current

100

VGS(off) @ 5.0V, 10 μA

r DS

r DS =

-___V_G_S___

10 VGS(off)

0 0.2 0.4 0.6 0.8 1

VGS /VGS(off) - NORMALIZED GATE-SOURCE VOLTAGE (V)

Figure 10. Normalized Drain Resistance vs.

Bias Voltage

100

TA = 25°C

VDG = 15V

f = 1.0 kHz

V GS(off) = - 1.4V

V GS(off) = - 3.0V

0.1 1 10

I D - DRAIN CURRENT (mA)

Figure 11. Transconductance vs. Drain Current

100

T A = 25°C

f = 1.0 kHz

V GS(off) = - 5.0V

V DG = 5.0V

10V

15V

20V

5.0V

10V

15V

5.0V

10V

15V

20V

0.1

0.01

V GS(off) = - 2.0V

VGS(off) = - 0.85V

0.1

I D - DRAIN CURRENT (mA)

Figure 12. Output Conductance vs. Drain Current

100

f = 0.1 - 1.0 MHz

C rs (VDS = 0)

C is (V DS = 0)

C is (VDS = 20)

-4 -8 -12 -16

V GS - GATE-SOURCE VOLTAGE (V)

-20

Figure 13. Capacitance vs. Voltage

100

VDG = 15V

50 BW = 6.0 Hz @ f = 10 Hz, 100 Hz

= 0.21 @ f ≥ 1.0 kHz

I D = 10 mA

I D = 1.0 mA

0.01

1 10

f - FREQUENCY (kHz)

100

Figure 14. Noise Voltage vs. Frequency