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Data Sheet
N0439N
N-channel MOSFET
40 V, 90 A, 3.3 mΩ
R07DS1065EJ0100
Rev.1.00
Jun 13, 2013
Description
This product is N-channel MOS Field Effect Transistors designed for high current switching applications.
Features
Super low on-state resistance
RDS(on) = 3.3 mΩ MAX. ( VGS = 10 V, ID = 45 A )
Low Ciss : Ciss = 3900 pF TYP. ( VDS = 25 V )
Ordering Information
Part No.
N0439N-S19-AY*1
LEAD PLATING
Pure Sn (Tin)
PACKING
Tube
50 p/tube
Note: *1. Pb-free ( This product does not contain Pb in the external electrode. )
TO-220
Package
TO-220 1.9g TYP.
Absolute Maximum Ratings (TA = 25°C)
Item
Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC) (TC = 25 °C)
Drain Current (pulse) *1
Total Power Dissipation (TC = 25 °C)
Total Power Dissipation (TA = 25 °C)
Channel Temperature
Storage Temperature
Repetitive Avalanche Current *2
Repetitive Avalanche Energy *2
Notes: 1. TC=25℃、Pw 10 μs, Duty Cycle 1%
2. RG = 25Ω, VGS = 20 Æ 0V
Symbol
VDSS
VGSS
ID(DC)
ID(pulse)
PT1
PT2
Tch
Tstg
IAR
EAR
Ratings
40
± 20
± 90
± 360
147
1.8
175
-55 to 175
37
136
Unit
V
V
A
A
W
W
°C
°C
A
mJ
Thermal Resistance
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance
Rth(ch-C)
Rth(ch-A)
1.02
83.3
°C/W
°C/W
R07DS1065EJ0100 Rev.1.00
Jun 13, 2013
Page 1 of 6

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N0439N
Electrical Characteristics (TA = 25°C)
Item
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate to Source Threshold Voltage
Forward Transfer Admittance *1
Drain to Source On-state Resistance *1
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage *1
Reverse Recovery Time
Reverse Recovery Charge
Note: *1. Pulsed test
Symbol
IDSS
IGSS
VGS(th)
| yfs |
RDS(on)
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
QGS
QGD
VF(S-D)
trr
Qrr
Min.
2.0
30
Typ.
3.0
2.75
3900
530
200
25
12
65
8
68
18
18
0.95
47
68
Max.
1
±100
4.0
3.30
5850
800
360
60
30
130
20
102
1.5
Unit
μA
nA
V
S
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
Test Conditions
VDS = 40V, VGS = 0 V
VGS = ± 20 V, VDS = 0 V
VDS = VGS, ID = 250 μA
VDS = 5 V, ID = 45 A
VGS = 10 V, ID = 45 A
VDS = 25 V
VGS = 0 V
f = 1 MHz
VDD = 20V, ID = 45 A
VGS = 10 V
RG = 0 Ω
VDD = 32V
VGS = 10 V
ID = 90 A
IF = 90 A, VGS = 0 V
IF = 90 A, VGS = 0 V
di/dt = 100 A/μs
TEST CIRCUIT 1 AVALANCHE CAPABILITY
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
RG = 25 Ω
PG.
VGS = 20 0 V
50 Ω
L
VDD
BVDSS
ID
VDD
IAS
VDS
Starting Tch
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
RG
PG.
VGS
0
τ
τ = 1 μs
Duty Cycle 1%
RL
VDD
VGS
VGS
Wave Form
10%
0
VDS
90%
VDS
VDS
Wave Form
0
td(on)
VGS 90%
90%
10% 10%
tr td(off) tf
ton toff
D.U.T.
IG = 2 mA
PG. 50 Ω
RL
VDD
R07DS1065EJ0100 Rev.1.00
Jun 13, 2013
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N0439N
TYPICAL CHARACTERISTICS (TA = 25°C)
DERATING FACTOR OF FORWARD BIAS SAFE
OPERATING AREA
120
100
80
60
40
20
0
0 25 50 75 100 125 150 175
TC - Case Temperature - °C
160
140
120
100
80
60
40
20
0
0
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
25 50 75 100 125 150 175
TC - Case Temperature - °C
FORWARD BIAS SAFE OPERATING AREA
1000
100
RDS(ON)Limted
(VGS=10V)
ID(Pulse)=360A
ID(DC)=90A
PW=100us
Power Dissipation Limited
10
Secondary Breakdown Limited
1
TC=25
Single Pulse
0.1
0.1
1
10
100
VDS - Drain to Source Voltage – V
DRAIN CURRENT(DC) vs. CASE TEMPERATURE
100
80
60
40
20
0
0 25 50 75 100 125 150 175
TC - Case Temperature - °C
1000
100
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
R t h(ch-A)=83. 3/ W
10
R t h(ch-C)=1. 02/ W
1
0.1
Single pulse
0.01
100 μ
1m
10 m
100 m
1
10 100 1000
PW - Pulse Width - s
R07DS1065EJ0100 Rev.1.00
Jun 13, 2013
Page 3 of 6

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N0439N
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
400
350
300
250
200
150
100
50
0
0
VGS=10V
Pulsed
0.2 0.4 0.6 0.8 1 1.2
VDS - Drain to Source Voltage - V
GATE TO SOURCE THRESHOLD VOLTAGE vs.
CHANNEL TEMPERATURE
4
3
2
1
0
-100
-50
0
VDS = VGS
ID=250μA
50 100 150 200
Tch - Channel Temperature - °C
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
6
5
4
3
2
1 VGS=10V
Pulsed
0
1 10 100 1000
ID - Drain Current - A
R07DS1065EJ0100 Rev.1.00
Jun 13, 2013
FORWARD TRANSFER CHARACTERISTICS
100
10 TA=-55
25
85
1 150
175
0.1
0.01
0.001
VDS = 10V
Pulsed
0123456
VGS - Gate to Source Voltage - V
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
100
TA=-55
25
85
150
175
10
1
0.1
VDS=5V
Pulsed
1 10 100
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
6
5
4
3
2
1 ID=45A
Pulsed
0
0 5 10 15 20
VGS - Gate to Source Voltage - V
Page 4 of 6

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N0439N
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
6
5
4
3
2
1
0
-100
0
VGS=10V
ID=45A
Pulsed
100 200
Tch - Channel Temperature - °C
1000
SWITCHING CHARACTERISTICS
100
10
VDD=20V
VGS=10V
RG=0
1
0.1
1
10
ID - Drain Current - A
t d(of f )
t d(on)
tr
tf
100
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
1000
100
VGS=10V
VGS=0V
10
1
0.1
0
0.2 0.4 0.6 0.8
Pulsed
1 1.2 1.4
VF(S-D) - Source to Drain Voltage - V
R07DS1065EJ0100 Rev.1.00
Jun 13, 2013
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
10000
Ciss
1000
Coss
VGS=0V
f =1MHz
100
0.1
1
Crss
10 100
VDS - Drain to Source Voltage - V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
35
30
VDD=32V
25
20V
8V
20
14
12
10
8
15 6
10
5
0
0
VGS 4
VDS 2
ID=90A
0
10 20 30 40 50 60 70
QG - Gate Charge - nC
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
100
10
1
0.1
di/dt=100A/u
VGS=0V
1 10 100
IF - Drain Current - A
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