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BTA10, BTB10
T1035, T1050
Datasheet
10 A Snubberless™, logic level and standard Triacs
A2
G
A1
A2
TO-220AB
G
A2
A1
A2
G
A1 A2
TO-220AB Ins.
D²PAK
A2 G
A1
Features
• Medium current Triac
• Low thermal resistance with clip bonding
• Low thermal resistance insulation ceramic for insulated BTA
• High commutation (4Q) or very high commutation (3Q, Snubberless™)
capability
• BTA series UL1557 certified (file ref: 81734)
• Packages are RoHS (2002/95/EC) compliant
Description
Available either in through-hole or surface mount packages, the BTA10, BTB10 and
T10xx Triac series are suitable for general purpose mains power AC switching. They
can be used as ON/OFF function in applications such as static relays, heating
regulation or induction motor starting circuit. They are also recommended for phase
control operations in light dimmers and appliance motors speed controllers.
The Snubberless™ versions (W suffix and T10xx) are especially recommended for
use on inductive loads, because of their high commutation performance. By using an
internal ceramic pad, the Snubberless™ series provide an insulated tab (rated at
2500 VRMS) complying with UL standards (file reference: E81734).
Product status link
BTA10, BTB10, T1035, T1050
Product summary
IT(RMS)
10 A
VDRM/VRRM
600 and 800 V
IGT 25 to 50 mA
DS3165 - Rev 9 - March 2019
For further information contact your local STMicroelectronics sales office.
www.st.com

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BTA10, BTB10, T1035, T1050
Characteristics
1 Characteristics
Table 1. Absolute maximum ratings
Symbol
Parameters
IT(RMS) RMS on-state current (full sine wave)
ITSM
Non repetitive surge peak on-state current (full cycle, Tj
initial = 25 °C)
I2t I2t value for fusing
Critical rate of rise of on-state current
dl/dt
IG = 2 x IGT , tr ≤ 100 ns
VDSM/VRSM Non repetitive surge peak off-state voltage
IGM
PG(AV)
Tstg
Tj
Peak gate current
Average gate power dissipation
Storage junction temperature range
Operating junction temperature range
TO-220AB
Tc = 105 °C
TO-220AB Ins. Tc = 95 °C
F = 50 Hz
tp = 20 ms
F = 60 Hz
tp = 16.7 ms
tp = 10 ms
Value
10
100
105
55
Unit
A
A
A2s
F = 120 Hz
Tj = 125 °C
50 A/µs
tp = 10 ms
tp = 20 µs
Tj = 25 °C
Tj = 125 °C
Tj = 125 °C
VDRM/VRRM +
100
4
1
-40 to +150
-40 to +125
V
A
W
°C
°C
Table 2. Static electrical characteristics
Symbol
VT(1)
VTO
RD
Test conditions
ITM = 14 A, tp = 380 µs
threshold on-state voltage
Dynamic resistance
IDRM/IRRM
VDRM = VRRM
1. For both polarities of A2 referenced to A1
Tj
25 °C
125 °C
125 °C
25 °C
125 °C
Max.
Max.
Max.
Max.
Value
1.55
0.85
40
5
1
Unit
V
V
µA
mA
Table 3. Electrical characteristics (Tj = 25 °C, unless otherwise specified) - Snubberless™ (3 quadrants)
Symbol
Parameters
Quadrant
T1035
BTA10-xCW
BTB10-xCW
T1050
BTA10-xBW
BTB10-xBW
Unit
IGT
VGT
VGD
IH
VD = 12 V, RL = 33 Ω
VD = VDRM, RL = 3,3 kΩ, Tj = 125 °C
IT = 500 mA
IL IG = 1.2 IGT
dV/dt(2) VD = 67 % VDRM gate open, Tj = 125 °C
I - II - III Max.
I - II - III Max.
I - II - III Min.
I - II - III Max.
I - III Max.
II Max.
Min.
35
1.3
0.2
35
50
80 60
500
50
50
70
80
1000
mA
V
V
mA
mA
V/µs
DS3165 - Rev 9
page 2/12

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BTA10, BTB10, T1035, T1050
Characteristics
Symbol
Parameters
Quadrant
(dI/dt)c(2) Without snubber, Tj = 125 °C
1. Minimum IGT is guaranteed at 5 % of IGT max.
2. For both polarities of A2 referenced to A1
Min.
T1035
BTA10-xCW
BTB10-xCW
5.5
T1050
BTA10-xBW
BTB10-xBW
Unit
9 A/ms
Table 4. Electrical characteristics (Tj = 25 °C, unless otherwise specified) - standard Triac (4 quadrants)
Symbol
Parameters
IGT(1)
VGT
VGD
IH(2)
VD = 12 V, RL = 33 Ω
VD = VDRM, RL = 3,3 kΩ, Tj = 125 °C
IT = 500 mA
IL IG = 1.2 IGT
dV/dt(2)
VD = 67 % VDRM gate open, Tj = 125 °C
(dV/dt)c(2) (dI/dt)c = 4.4 A/ms, Tj = 125 °C
1. Minimum IGT is guaranteed at 5 % of IGT max.
2. For both polarities of A2 referenced to A1
Quadrant
I - II - III
IV
All
I - II - III
I - II - III
I - III
II
Max.
Max.
Max.
Min.
Max.
Max.
Max.
Min.
Min.
Value
CB
25 50
50 100
1.3
0.2
25 50
40 50
80 100
200 400
5 10
Unit
mA
V
V
mA
mA
V/µs
V/µs
Table 5. Thermal resistance
Symbol
Rth(j-c) (typ.)
Rth(j-a) (max.)
Parameters
Junction to case (AC)
Junction to ambient (S(1) = 2 cm²)
Junction to ambient
TO-220AB / D²PAK
TO-220AB insulated
D²PAK
TO-220AB / TO-220AB ins
1. Copper surface under tab.
Value
1.5
2.4
45
60
Unit
°C/W
DS3165 - Rev 9
page 3/12

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BTA10, BTB10, T1035, T1050
Characteristics (curves)
1.1 Characteristics (curves)
Figure 2. Maximum power dissipation versus on-state
RMS current (full cycle)
P(W)
13
12
11
10
9
8
7
6
5
4
3
2
1 IT(RMS)(A)
0
012345
6 7 8 9 10
Figure 3. RMS on-state current versus case temperature
(full cycle)
IT(RMS) (A)
12
11
10
9
8
7
6
5
4
3
2
1
0
0 25
BTB/T10
BTA
Tc(°C)
50 75
100 125
Figure 4. Relative variation of thermal impedance versus
pulse duration
K = [Zth/Rth]
1E+0
Zth(j-c)
Figure 5. On-state characteristics (maximum values)
ITM(A)
100
Tj max.
Vto = 0.85 V
Rd = 40 mΩ
Tj = Tj max.
1E-1
Zth(j-a)
10
Tj = 25 °C
1E-2
1E-3
1E-2
1E-1
tp(s)
1E+0
1E+1
1E+2
5E+2
1
0.5 1.0
VTM(V)
1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
Figure 6. Surge peak on-state current versus number of
cycles
ITSM(A)
110
100
90
80
70
60
50
40
30
20
10
0
1
Non repetitive
Tj initial=25°C
Repetitive
TC=95°C
Number of cycles
10 100
t=20ms
One cycle
1000
Figure 7. Non repetitive surge peak on-state current
versus sinusoidal pulse width (tP < 10 ms)
ITSM(A)
1000
Tj initial=25°C
100
dI/dt limitation:
50A/µs
ITSM
10
0.01
tp(ms)
0.10
1.00
10.00
DS3165 - Rev 9
page 4/12

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BTA10, BTB10, T1035, T1050
Characteristics (curves)
Figure 8. Relative variation of gate trigger current, holding
current and latching current versus junction temperature
(typical values)
Figure 9. Relative variation of critical rate of decrease of
main current versus (dV/dt)c (typical values)
IGT,IH,IL[Tj] / IGT,IH,IL[Tj = 25 °C]
2.5
2.0
IGT
1.5
1.0 IH and IL
0.5
0.0 Tj (°C)
-40 -20 0 20 40 60 80 100 120 140
(dl/dt)c [(dV/dt)c / specified (dl/dt)c
2.0
1.8
C
1.6
B
1.4
1.2
1.0
0.8
0.6
0.4
0.1
(dV/dt)c (V/µs)
1.0 10.0
BW/CW/T10xx
100.0
Figure 10. Relative variation of critical rate of decrease of Figure 11. D²PAK thermal resistance junction to ambient
main current versus junction temperature
versus copper surface under tab
(dl/dt)c [Tj] / (dl/dt)c [Tj = 125 °C]
6
5
4
3
2
1
0 Tj(°C)
0 25 50 75
100 125
80 Rth(j-a) (°C/W)
70
60
D²PAK
Epoxy printed board FR4, copper thickness = 35 µm
50
40
30
20
10
0
0
SCu(cm²)
5 10 15 20 25 30 35 40
DS3165 - Rev 9
page 5/12