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UNISONIC TECHNOLOGIES CO., LTD
08NM65-V
0.8A, 650V N-CHANNEL
SUPER-JUNCTION MOSFET
Power MOSFET
DESCRIPTION
The UTC 08NM65-V is a Super Junction MOSFET
Structure and is designed to have better characteristics, such
as fast switching time, low gate charge, low on-state
resistance and have a high rugged avalanche characteristics.
This power MOSFET is usually used at high speed
switching applications in power supplies, PWM motor controls,
high efficient DC to DC converters and bridge circuits.
FEATURES
* RDS(on) < 7.3@ VGS=10V, ID=0.4A
* High breakdown voltage
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
08NM65L-TN3-R
08NM65G-TN3-R
Note: Pin Assignment: G: Gate D: Drain S: Source
Package
TO-252
Pin Assignment
123
GDS
Packing
Tape Reel
MARKING
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08NM65-V
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TA =25°С, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
650
V
Gate-Source Voltage
Drain Current
Continuous
Pulsed
Peak Diode Recovery dv/dt (Note 3)
VGSS
ID
IDM
dv/dt
±30 V
0.8 A
1.6 A
1.6 V/ns
Power Dissipation
Junction Temperature
PD 28 W
TJ
+150
°C
Storage Temperature Range
TSTG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by maximum junction temperature.
3. ISD 0.8A, di/dt 200A/µs, VDD BVDSS, Starting TJ = 25°C
THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
SYMBOL
θJA
θJC
RATINGS
110
4.46
ELECTRICAL CHARACTERISTICS (TC =25°С, unless otherwise specified)
UNIT
°С/W
°С/W
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
Forward
Reverse
BVDSS
IDSS
IGSS
ID=250µA, VGS=0V
VDS=650V, VGS=0V
VGS=+30V, VDS=0V
VGS=-30V, VDS=0V
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-State Resistance
VGS(TH)
RDS(ON)
VDS=VGS, ID=250µA
VGS=10V, ID=0.4A
DYNAMIC PARAMETERS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CISS
COSS
CRSS
VGS=0V, VDS=25V, f=1.0MHz
SWITCHING PARAMETERS
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall-Time
QG
QGS
QGD
tD(ON)
tR
tD(OFF)
tF
VDS=100V, VGS=10V, ID=0.8A,
ID=3mA (Note 1, 2)
VDS=100V, VGS=10V, ID=0.8A,
RG=25(Note 1, 2)
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
IS
Maximum Body-Diode Pulsed Current
ISM
Drain-Source Diode Forward Voltage
VSD IS=0.8A, VGS=0V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
trr IS=0.8A, VGS=0V,
Qrr dIF/dt=100A/µs (Note 1)
Notes: 1. Pulse Test: Pulse width 300μs, Duty cycle2%.
2. Essentially independent of operating temperature.
MIN TYP MAX UNIT
650 V
10 µA
+100 nA
-100 nA
1.0 3.0 V
7.3
67 pF
45 pF
4 pF
7 nC
1.7 nC
1.5 nC
3.2 ns
3.6 ns
8.4 ns
44.8 ns
0.8
1.6
1.4
120
0.23
A
A
V
ns
µC
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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08NM65-V
TEST CIRCUITS AND WAVEFORMS
Power MOSFET
VGS
(Driver)
ISD
(D.U.T.)
VDS
(D.U.T.)
Peak Diode Recovery dv/dt Test Circuit
P.W.
Period
P. W.
D= Period
VGS= 10V
IFM, Body Diode Forward Current
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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Ver.A

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08NM65-V
TEST CIRCUITS AND WAVEFORMS
Power MOSFET
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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08NM65-V
TYPICAL CHARACTERISTICS
Power MOSFET
UNISONIC TECHNOLOGIES CO., LTD
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