60NM50
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
Gate-Source Voltage
VDSS 500 V
VGSS ±30 V
Drain Current
Continuous
Pulsed (Note 2)
ID
IDM
60 A
240 A
Avalanche Current (Note 2)
Avalanche Energy
Single Pulsed (Note 3)
IAR
EAS
20
2400
A
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
14 V/ns
Power Dissipation
PD 390 W
Junction Temperature
Storage Temperature
TJ
TSTG
+150
-55 ~ +150
°C
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature.
3. L = 12mH, IAS = 20A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
4. ISD ≤ 30A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
SYMBOL
θJA
θJC
RATINGS
62
0.32
ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified)
UNIT
°С/W
°С/W
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate- Source Leakage Current
Forward
Reverse
BVDSS
IDSS
IGSS
ID=250µA, VGS=0V
VDS=500V, VGS=0V
VGS=+30V, VDS=0V
VGS=-30V, VDS=0V
500 V
10 µA
+100 nA
-100 nA
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-State Resistance
VGS(TH)
RDS(ON)
VDS=VGS, ID=250µA
VGS=10V, ID=30A
2.5 4.5 V
55 mΩ
DYNAMIC PARAMETERS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CISS
COSS
CRSS
VGS=0V, VDS=25V, f=1.0MHz
4450
3400
41
pF
pF
pF
SWITCHING PARAMETERS
Total Gate Charge (Note 1)
Gate to Source Charge
Gate to Drain Charge
Turn-ON Delay Time (Note 1)
Rise Time
Turn-OFF Delay Time
Fall-Time
QG
QGS
QGD
tD(ON)
tR
tD(OFF)
tF
VDS=50V, ID=1.3A, IG=100μA
VGS=10V (Note 1,2)
VDD=30V, ID=0.5A, RG=25Ω,
VGS=10V (Note 1,2)
498
28
118
176
600
1430
1060
nC
nC
nC
ns
ns
ns
ns
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
IS
Maximum Body-Diode Pulsed Current
ISM
Drain-Source Diode Forward Voltage (Note 1)
VSD IS=30A, VGS=0V
Body Diode Reverse Recovery Time (Note 1)
Body Diode Reverse Recovery Charge
trr IS=30A, VGS=0V,
Qrr dIF/dt=100A/µs
Notes: 1. Pulse Test : Pulse width ≤ 300μs, Duty cycle ≤ 2%.
2. Essentially independent of operating ambient temperature.
60
240
1.4
600
12.1
A
A
V
ns
µC
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R205-199.c