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UNISONIC TECHNOLOGIES CO., LTD
60NM50
Preliminary
60A, 500V N-CHANNEL
SUPER-JUNCTION MOSFET
DESCRIPTION
The UTC 60NM50 is a Super Junction MOSFET Structure and is
designed to have better characteristics, such as fast switching time,
low gate charge, low on-state resistance and a high rugged
avalanche characteristics. This power MOSFET is usually used at
DC-DC, AC-DC converters for power applications.
FEATURES
* RDS(ON) < 55mΩ @ VGS=10V, ID=30A
* High Switching Speed
* 100% Avalanche Tested
SYMBOL
2.Drain
Power MOSFET
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
60NM50L-T47-T
60NM50G-T47-T
Note: Pin Assignment: G: Gate D: Drain S: Source
Package
TO-247
Pin Assignment
123
GDS
Packing
Tube
MARKING
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Copyright © 2017 Unisonic Technologies Co., Ltd
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60NM50
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
Gate-Source Voltage
VDSS 500 V
VGSS ±30 V
Drain Current
Continuous
Pulsed (Note 2)
ID
IDM
60 A
240 A
Avalanche Current (Note 2)
Avalanche Energy
Single Pulsed (Note 3)
IAR
EAS
20
2400
A
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
14 V/ns
Power Dissipation
PD 390 W
Junction Temperature
Storage Temperature
TJ
TSTG
+150
-55 ~ +150
°C
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature.
3. L = 12mH, IAS = 20A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
4. ISD ≤ 30A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
SYMBOL
θJA
θJC
RATINGS
62
0.32
ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified)
UNIT
°С/W
°С/W
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate- Source Leakage Current
Forward
Reverse
BVDSS
IDSS
IGSS
ID=250µA, VGS=0V
VDS=500V, VGS=0V
VGS=+30V, VDS=0V
VGS=-30V, VDS=0V
500 V
10 µA
+100 nA
-100 nA
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-State Resistance
VGS(TH)
RDS(ON)
VDS=VGS, ID=250µA
VGS=10V, ID=30A
2.5 4.5 V
55 mΩ
DYNAMIC PARAMETERS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CISS
COSS
CRSS
VGS=0V, VDS=25V, f=1.0MHz
4450
3400
41
pF
pF
pF
SWITCHING PARAMETERS
Total Gate Charge (Note 1)
Gate to Source Charge
Gate to Drain Charge
Turn-ON Delay Time (Note 1)
Rise Time
Turn-OFF Delay Time
Fall-Time
QG
QGS
QGD
tD(ON)
tR
tD(OFF)
tF
VDS=50V, ID=1.3A, IG=100μA
VGS=10V (Note 1,2)
VDD=30V, ID=0.5A, RG=25Ω,
VGS=10V (Note 1,2)
498
28
118
176
600
1430
1060
nC
nC
nC
ns
ns
ns
ns
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
IS
Maximum Body-Diode Pulsed Current
ISM
Drain-Source Diode Forward Voltage (Note 1)
VSD IS=30A, VGS=0V
Body Diode Reverse Recovery Time (Note 1)
Body Diode Reverse Recovery Charge
trr IS=30A, VGS=0V,
Qrr dIF/dt=100A/µs
Notes: 1. Pulse Test : Pulse width ≤ 300μs, Duty cycle ≤ 2%.
2. Essentially independent of operating ambient temperature.
60
240
1.4
600
12.1
A
A
V
ns
µC
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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60NM50
Preliminary
TEST CIRCUITS AND WAVEFORMS
Power MOSFET
VGS
(Driver)
ISD
(D.U.T.)
VDS
(D.U.T.)
Peak Diode Recovery dv/dt Test Circuit
P.W.
Period
P. W.
D= Period
VGS= 10V
IFM, Body Diode Forward Current
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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60NM50
Preliminary
TEST CIRCUITS AND WAVEFORMS (Cont.)
Power MOSFET
Gate Charge Test Circuit
12V
200nF
50kΩ
VGS
300nF
Same Type
as DUT
Gate Charge Waveforms
VGS
QG
10V
VDS
QGS
QGD
3mA
DUT
Charge
Unclamped Inductive Switching Test Circuit
VDS
RG ID
L
10V
tP
DUT
VDD
Unclamped Inductive Switching Waveforms
BVDSS
IAS
EAS=
1
2
LIAS2
BVDSS
BVDSS-VDD
ID(t)
VDD VDS(t)
tP Time
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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60NM50
Preliminary
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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