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P0109DA
Datasheet
0.8 A 400 V high immunity sensitive SCR thyristor in TO-92
A
G
K
TO-92
G KA
Product status link
P0109DA
Product summary
IT(RMS)
0.8 A
VDRM/VRRM
400 V
IGT 1 µA
Tjmax.
125 °C
Features
• On-state rms current, IT(RMS) 0.8 A
• 125 °C max. Tj
• Ultra low 1 µA gate current
• Repetitive peak off-state voltage, VDRM/VRRM 400 V
ECOPACK2 compliant
Applications
• Gate driver for large Thyristors
• Overvoltage crowbar protection
• Ground fault circuit interrupters
• Arc fault circuit interrupter
• Standby mode power supplies
• Residual current detector
Description
Thanks to highly sensitive triggering levels, the 0.8 A P0109DA SCR thyristor is
suitable for all applications where available gate current is limited.
This device offers a high blocking voltage of 400 V, ideal for applications like
interrupters circuits.
The P0109DA is available in through-hole TO-92 package.
DS13154 - Rev 1 - January 2020
For further information contact your local STMicroelectronics sales office.
www.st.com

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P0109DA
Characteristics
1 Characteristics
Table 1. Absolute maximum ratings (limiting values)
Symbol
Parameters
IT(RMS)
On-state RMS current (180° conduction angle)
IT(AV)
Average on-state current (180° conduction angle)
ITSM
Non repetitive surge peak on-state current,
Tj initial = 25 °C
I2t I2t value for fusing
Critical rate of rise of on-state current
dl/dt
IG = 2 x IGT , tr ≤ 100 ns
VDRM / VRRM Repetitive peak off-state voltage
IGM Peak gate current
PG(AV)
Tstg
Average gate power dissipation
Storage junction temperature range
Tj Operating junction temperature range
tp = 8.3 ms
tp = 10 ms
tp = 10 ms
F = 60 Hz
tp = 20 µs
TL = 55 °C
Tj = 25 °C
Tj = 25 °C
Tj = 25 °C
Tj = 125 °C
Tj = 125 °C
Tj = 125 °C
Value
0.8
0.5
8
7
0.24
Unit
A
A
A
A2s
50 A/µs
400
1
0.1
-40 to +150
-40 to +125
V
A
W
°C
°C
Symbol
IGT
VGT
VGD
VRG
IH
IL
dV/dt
Table 2. Electrical characteristics (Tj = 25 °C, unless otherwise specified)
Parameters
Value Unit
VD = 12 V, RL = 33 Ω
Max.
Max.
1
0.8
µA
V
VD = VDRM, RL = 3.3 kΩ, RGK = 1 kΩ, Tj = 125 °C
IRG = 10 µA
IT = 50 mA, RGK = 1 kΩ
IG = 1.2 IGT, RGK = 1 kΩ
VD = 67 % VDRM, RGK = 1 kΩ, Tj = 125 °C
Min. 0.1
V
Min. 8
Max. 5
mA
Max. 6
mA
Min. 75 V/µs
Symbol
VT
VTO
Rd
IDRM
IRRM
Table 3. Static electrical characteristics
Test conditions
ITM = 1.6 A, tp = 380 µs
Threshold on-state voltage
Dynamic resistance
VD = VDRM
VR = VRRM
Tj
25 °C
125 °C
125 °C
25 °C
125 °C
Value Unit
Max. 1.95 V
Max. 0.95 V
Max. 600 mΩ
Max.
1
0.1
µA
mA
DS13154 - Rev 1
page 2/9

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Symbol
Rth(j-l)
Rth(j-a)
Junction to lead (DC)
Junction to ambient (DC)
Table 4. Thermal resistance
Parameters
P0109DA
Characteristics
Max.
value
Unit
80
°C/W
150
DS13154 - Rev 1
page 3/9

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P0109DA
Characteristics (curves)
1.1 Characteristics (curves)
Figure 1. Maximum power dissipation versus on-state
RMS current (full cycle)
P(W)
1.0
0.9 α = 180°
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0.0
0.1
IT(AV)(A)
0.2 0.3
0.4
360°
α
0.5 0.6
Figure 2. Average and DC on-state current versus lead
temperature
IT(AV)(A)
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0
25
D.C. (TO-92)
α = 180° (TO-92)
Tlead (°C)
50 75
100
125
Figure 3. Average and DC on-state current versus ambient Figure 4. Relative variation of thermal impedance versus
temperature
pulse duration
IT(AV)(A)
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0
D.C. (TO-92)
α = 180° (TO-92)
25
Tamb(°C)
50 75
100 125
K=[Z th(j-a) /Rth(j-a) ]
1.00
0.10
TO-92
0.01
1E-2
1E-1
tp(s)
1E+0
1E+1
1E+2
5E+2
Figure 5. Relative variation of holding current versus
gate-cathode resistance
Figure 6. Relative variation of gate voltage and gate,
holding and latching current versus junction temperature
20 IH[ RGK] / IH[ RGK = 1 kΩ]
18
16
14
12
10 Typical values
8
6
4
2
0
1E-2
RGK( kΩ)
1E-1
1E+0
Tj = 25°C
1E+1
6.0 IGT, V GT, I H, I L[Tj ] / IGT, V GT, I H, I L[Tj =25 ° C]
5.0
Relative variations
Typical values
4.0
3.0 IGT
2.0
IH and IL
(RGK =1 KΩ)
1.0 VGT
0.0
-40
-20
Tj(°C)
0 20 40 60 80 100 120 140
DS13154 - Rev 1
page 4/9

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P0109DA
Characteristics (curves)
Figure 7. Relative variation of static dV/dt immunity
versus gate-cathode resistance
Figure 8. Relative variation of dV/dt immunity versus gate-
cathode capacitance
10.0 dV/dt[R GK] / dV/dt[RGK = 1kΩ]
Typical values
1.0
Tj = 125°C
VD = 0.67 x VDRM
0.1
0
RGK( kΩ)
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
10 dV/dt[CGK] / dV/dt[RGK= 1kΩ, CGK = 0 F]
VD= 0.67 xV DRM
Tj = 125°C
RGK= 1kΩ
8
6
4
Typical values
2
CGK(nF)
0
01 2 3 4 5 6
7
Figure 9. Surge peak on-state current versus number of Figure 10. Non-repetitive surge peak on-state current for
cycles
sinusoidal pulse (tp< 10 ms)
ITSM(A)
8
7
6
5
4
3
2
1
0
1
Repetitive
Tamb = 36 °C
Non repetitive
Tj initial = 25°C
Number of cycles
1 0 100
tp = 10ms
One cycle
1000
100.0 ITSM(A)
10.0
1.0
0.1
0.01
Tj initial = 25°C
ITSM
tp(ms)
0.10
1.00
10.00
Figure 11. On-state characteristics (maximum values)
1E+1
ITM(A)
Tj max.:
Vt0 = 0.95 V
Rd = 600 mΩ
1E+0
Tj = max
1E-1
Maximum values
Tj = 25 °C
VTM(V)
1E-2
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
DS13154 - Rev 1
page 5/9