P0165EL
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
VDS = 0V, VGS = ±30V
650
2 3.1
4
V
±100 nA
Zero Gate Voltage Drain Current
IDSS
VDS = 650V, VGS = 0V
VDS = 520V, VGS = 0V , TJ = 55 °C
1
mA
10
Drain-Source On-State
Resistance1
RDS(ON)
VGS = 10V, ID = 0.15A
0.1 9.2 14
Ω
Forward Transconductance1
gfs
VDS = 10V, ID = 0.15A
1.2 S
DYNAMIC
Input Capacitance
Ciss
160
Output Capacitance
Coss
VGS = 0V, VDS = 25V, f = 1MHz
30 pF
Reverse Transfer Capacitance
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VDS = 520V, VGS = 10V,
ID = 0.3A
VDS = 325V, ID @ 0.3A
VGS = 10V, RGS = 25Ω
7
3.3
0.8 nC
0.6
40
95
nS
164
105
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current
Forward Voltage1
IS
VSD IF = 0.3A, VGS = 0V
1A
1.5 V
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = 0.3A, dl/dt = 100A / mS
1Pulse test : Pulse Width 300 msec, Duty Cycle 2％.
249 nS
0.63 uC
2Independent of operating temperature.
REV 1.0
2 2017/2/24
