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4N25, 4N26, 4N27, 4N28, 4N35, 4N36, 4N37, 4N38
H11A1, H11A2, H11A3, H11A4, H11A5
DC Input 6-Pin Phototransistor Optocoupler
Features
High isolation 5000 VRMS
CTR flexibility available see order information
DC input with transistor output
Operating temperature range - 55 °C to 110 °C
Regulatory Approvals
UL - UL1577 (E364000)
VDE - EN60747-5-5(VDE0884-5)
CQC GB4943.1, GB8898
IEC60065, IEC60950
Applications
Switch mode power supplies
Computer peripheral interface
Microprocessor system interface
Description
The 4N25, 4N26, 4N27, 4N28, 4N35, 4N36, 4N37,
4N38, H11A1, H11A2, H11A3, H11A4, H11A5 series
consists of a photo transistor optically coupled to a
gallium arsenide Infrared-emitting diode in a 6-lead
DIP package different lead forming options.
Package Outline
Schematic
Note: Different bending options available. See package
dimension.
CT Micro
Proprietary & Confidential
Page 1
Rev 2
Apr, 2016

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4N25, 4N26, 4N27, 4N28, 4N35, 4N36, 4N37, 4N38
H11A1, H11A2, H11A3, H11A4, H11A5
DC Input 6-Pin Phototransistor Optocoupler
Absolute Maximum Rating at 25oC
Symbol
Parameters
VISO Isolation voltage
TOPR Operating temperature
TSTG Storage temperature
TSOL Soldering temperature
Emitter
IF
IF(TRANS)
Forward current
Peak transient current (≤1μs P.W,300pps)
VR Reverse voltage
PD Power dissipation
Detector
PD Power dissipation
BVCEO Collector-Emitter Breakdown Voltage
BVCBO Collector-Base Breakdown Voltage
BVECO Emitter-Collector Breakdown Voltage
BVEBO Emitter-Base Breakdown Voltage
Ratings
5000
-55 ~ +110
-55 ~ +150
260
60
1
6
100
150
80
80
7
7
Units
VRMS
oC
oC
oC
Notes
mA
A
V
mW
mW
V
V
V
V
CT Micro
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Page 2
Rev 2
Apr, 2016

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4N25, 4N26, 4N27, 4N28, 4N35, 4N36, 4N37, 4N38
H11A1, H11A2, H11A3, H11A4, H11A5
DC Input 6-Pin Phototransistor Optocoupler
Electrical Characteristics TA = 25°C (unless otherwise specified)
Emitter Characteristics
Symbol
Parameters
Test Conditions
Min Typ Max Units Notes
VF Forward voltage
IF=10mA
1.24 1.4
V
IR Reverse Current
VR = 6V
- - 5 µA
CIN Input Capacitance
f= 1MHz
- 45 - pF
Detector Characteristics
Symbol
Parameters
Test Conditions
BVCEO Collector-Emitter Breakdown
IC= 0.1mA
BVECO Emitter-Collector Breakdown
IE= 0.1mA
BVCBO Collector-Base Breakdown
IC= 0.1mA
BVEBO Emitter-Base Breakdown
IE= 0.1mA
Collector-Emitter 4N25,4N26,4N27,4N28
VCE= 10V, IF=0mA
ICEO Dark Current
H11A1,A2,A3,A4,A5
4N35,4N36,4N37,4N38 VCE=60V, IF=0mA
ICBO Collector-Base Dark Current
VCB= 10V, IF=0mA
Min Typ Max Units Notes
80 - - V
7- - V
80 - - V
7- - V
nA
- - 50
- - 50 nA
- - 20 nA
Transfer Characteristics
Symbol
Parameters
4N35
4N25,4N26, 4N38,
CTR
Current
Transfer
Ratio
H11A2, H11A3
4N27, 4N28, H11A4
H11A1
H11A5
4N36
4N37
4N25,4N26,
Collector-E 4N27,4N28
VCE(SAT)
mitter
Saturation
4N35,4N36,4N37
H11A1,H11A2,
Voltage
H11A3,H11A4,H11A5
4N38
Test Conditions
IF= 10mA, VCE= 10V
IF= 2mA, VCE= 5V
IF= 50mA, IC= 2mA
IF= 10mA, IC= 0.5mA
IF= 20mA, IC= 4mA
CT Micro
Proprietary & Confidential
Page 3
Min Typ Max Units Notes
100 -
-
20 -
-
10 -
50 -
-
%
-
30 -
-
130 - 260
200 - 400
- - 0.5
- - 0.3
V
- - 0.4
- - 1.0
Rev 2
Apr, 2016

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4N25, 4N26, 4N27, 4N28, 4N35, 4N36, 4N37, 4N38
H11A1, H11A2, H11A3, H11A4, H11A5
DC Input 6-Pin Phototransistor Optocoupler
Transfer Characteristics
RIO Isolation Resistance
CIO Isolation Capacitance
VIO= 500VDC
f= 1MHz
1x1011
0.25
pF
Switching Characteristics
Symbol
Parameters
Test Conditions
Min Typ Max Units Notes
Turn On
ton
Time
4N25,4N26,4N27,4N28 IF= 10mA, VCC= 10V, RL=
H11A1,A2,A3,A4,A5
100
Ic= 2mA, VCC= 10V, RL=
4N35,4N36,4N37,4N38
100
-
-
4.3 9.8
9.8 11.5
µs
Turn Off
toff
Time
4N25,4N26,4N27,4N28 IF= 10mA, VCC= 10V, RL=
H11A1,A2,A3,A4,A5
100
Ic= 2mA, VCC= 10V, RL=
4N35,4N36,4N37,4N38
100
-
-
3.9 9.8
6.9 11.5
µs
CT Micro
Proprietary & Confidential
Page 4
Rev 2
Apr, 2016

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4N25, 4N26, 4N27, 4N28, 4N35, 4N36, 4N37, 4N38
H11A1, H11A2, H11A3, H11A4, H11A5
DC Input 6-Pin Phototransistor Optocoupler
Typical Characteristic Curves
CT Micro
Proprietary & Confidential
Page 5
Rev 2
Apr, 2016