H11B255.pdf 데이터시트 (총 13 페이지) - 파일 다운로드 H11B255 데이타시트 다운로드

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4N29, 4N30, 4N31, 4N32, 4N33
H11B1, H11B2, H11B3, H11B255, TIL113
DC Input 6-Pin Photodarlington Optocoupler
Features
High isolation 5000 VRMS
CTR flexibility available see order information
DC input with transistor output
Temperature range - 55 °C to 100 °C
Regulatory Approvals
UL - UL1577 (E364000)
VDE - EN60747-5-5(VDE0884-5)
CQC GB4943.1, GB8898
IEC60065, IEC60950
Applications
Switch mode power supplies
Computer peripheral interface
Microprocessor system interface
Description
The 4N29, 4N30, 4N31, 4N32, 4N33, H11B1,
H11B2, H11B3, H11B255, and TIL113 series
consists of a photodarlington transistor optically
coupled to a gallium arsenide Infrared-emitting diode
in a 4-lead DIP package with bending option.
Package Outline
Schematic
Note: Different bending options available. See package
dimension.
CT Microelectronics
Proprietary & Confidential
Page 1
Rev 1
Apr, 2014

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4N29, 4N30, 4N31, 4N32, 4N33
H11B1, H11B2, H11B3, H11B255, TIL113
DC Input 6-Pin Photodarlington Optocoupler
Absolute Maximum Rating at 25oC
Symbol
Parameters
VISO Isolation voltage
TOPR Operating temperature
TSTG Storage temperature
TSOL Soldering temperature
Emitter
IF
IF(TRANS)
Forward current
Peak transient current (≤1μs P.W,300pps)
VR Reverse voltage
PD Power dissipation
Detector
PD Power dissipation
BVCEO Collector-Emitter Breakdown Voltage
BVCBO Collector-Base Breakdown Voltage
BVECO Emitter-Collector Breakdown Voltage
BVEBO Emitter-Base Breakdown Voltage
Ratings
5000
-55 ~ +100
-55 ~ +150
260
60
1
6
120
150
55
55
7
7
Units
VRMS
0C
0C
0C
Notes
mA
A
V
mW
mW
V
V
V
V
CT Microelectronics
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Page 2
Rev 1
Apr, 2014

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4N29, 4N30, 4N31, 4N32, 4N33
H11B1, H11B2, H11B3, H11B255, TIL113
DC Input 6-Pin Photodarlington Optocoupler
Electrical Characteristics TA = 25°C (unless otherwise specified)
Emitter Characteristics
Symbol
Parameters
VF Forward voltage
VF Forward voltage H11B3
IR Reverse Current
CIN Input Capacitance
Test Conditions
IF=10mA
IF=50mA
VR = 6V
f= 1MHz
Min Typ Max Units Notes
1.24 1.4
V
1.45 1.5
V
- - 5 µA
- 45 - pF
Detector Characteristics
Symbol
Parameters
BVCEO Collector-Emitter Breakdown
BVECO Emitter-Collector Breakdown
BVCBO Collector-Base Breakdown
ICEO Collector-Emitter Dark Current
Test Conditions
IC= 100µA
IE= 100µA
IC= 100µA
VCE= 10V, IF=0mA
Min Typ Max Units Notes
55 - - V
7- -V
55 - - V
- - 100 nA
Transfer Characteristics
Symbol
Parameters
4N29, 4N30
4N31
CTR
Current
Transfer
Ratio
4N32, 4N33
H11B1
H11B2
H11B3
H11B255
TIL113
Collector- 4N29, 4N30, 4N32,
Emitter
4N33
VCE(SAT)
Saturation
Voltage
4N31, TIL113
H11B1, H11B2,
H11B3
H11B255
RIO Isolation Resistance
CIO Isolation Capacitance
Test Conditions
IF= 10mA, VCE= 10V
IF= 1mA, VCE= 10V
IF= 10mA, VCE= 5V
IF= 10mA, VCE= 1V
IF= 8mA, IC= 2mA
IF= 8mA, IC= 2mA
IF= 1mA, IC= 1mA
IF=50mA, IC= 50mA
VIO= 500VDC
f= 1Mhz
CT Microelectronics
Proprietary & Confidential
Page 3
Min Typ
100 -
50 -
500 -
500 -
200 -
100 -
100 -
300 -
--
--
--
-
1x1011
-
0.25
Max Units Notes
-
-
-
-
%
-
-
-
-
1.0
1.2
V
1.0
1.0
pF
Rev 1
Apr, 2014

No Preview Available !

4N29, 4N30, 4N31, 4N32, 4N33
H11B1, H11B2, H11B3, H11B255, TIL113
DC Input 6-Pin Photodarlington Optocoupler
Switching Characteristics
Symbol
Parameters
Test Conditions
4N29, 4N30,
4N31, 4N32,
TON Turn On Time 4N33, TIL113
IF= 200mA, Ic= 50mA, RL=
100
H11B1, H11B2, IF= 10mA, VCC= 10V, RL=
H11B3, H11B255 100
4N29, 4N30,
TOFF
4N31
4N32, 4N33,
Turn Off Time
TIL113
IF= 200mA, Ic= 50mA, RL=
100
H11B1, H11B2, IF= 10mA, VCC= 10V, RL=
H11B3, H11B255 100
Min Typ Max Units Notes
- - 4.7
µs
- 24 -
- - 30
- - 90 µs
- 17 -
CT Microelectronics
Proprietary & Confidential
Page 4
Rev 1
Apr, 2014

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4N29, 4N30, 4N31, 4N32, 4N33
H11B1, H11B2, H11B3, H11B255, TIL113
DC Input 6-Pin Photodarlington Optocoupler
Typical Characteristic Curves
CT Microelectronics
Proprietary & Confidential
Page 5
Rev 1
Apr, 2014