93LC76.pdf 데이터시트 (총 22 페이지) - 파일 다운로드 93LC76 데이타시트 다운로드

No Preview Available !

Not recommended for new designs –
Please use 93LC76C or 93LC86C.
93LC76/86
8K/16K 2.5V Microwire Serial EEPROM
Features:
• Single Supply with Programming Operation down
to 2.5V
• Low-Power CMOS Technology
- 1 mA active current typical
- 5 A standby current (typical) at 3.0V
• ORG Pin Selectable Memory Configuration
1024 x 8 or 512 x 16-Bit Organization (93LC76)
2048 x 8 or 1024 x 16-Bit Organization (93LC86)
• Self-Timed Erase and Write Cycles
(including auto-erase)
• Automatic ERAL before WRAL
• Power On/Off Data Protection Circuitry
• Industry Standard 3-Wire Serial I/O
• Device Status Signal during Erase/Write Cycles
• Sequential Read Function
• 1,000,000 Erase/Write Cycles Ensured
• Data Retention > 200 years
• 8-Pin PDIP/SOIC Package
• Temperature Ranges Available
- Commercial (C)
- Industrial (I)
0°C to +70°C
-40°C to +85°C
Description:
The Microchip Technology Inc. 93LC76/86 are 8K and
16K low voltage serial Electrically Erasable PROMs.
The device memory is configured as x8 or x16 bits
depending on the ORG pin setup. Advanced CMOS
technology makes these devices ideal for low power
nonvolatile memory applications. These devices also
have a Program Enable (PE) pin to allow the user to
write-protect the entire contents of the memory array.
The 93LC76/86 is available in standard 8-pin PDIP and
8-pin surface mount SOIC packages.
Package Types
PDIP Package
CS 1
CLK 2
DI 3
DO 4
SOIC Package
CS 1
CLK 2
DI 3
DO 4
8 VCC
7 PE
6 ORG
5 VSS
8 VCC
7 PE
6 ORG
5 VSS
Block Diagram
VCC VSS
Memory
Array
Data
Register
DI
Mode
PE
CS
Decode
Logic
CLK
Clock
Generator
Address
Decoder
Address
Counter
Output
Buffer
DO
2010 Microchip Technology Inc.
DS21131F-page 1

No Preview Available !

93LC76/86
1.0 ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings(†)
VCC.............................................................................................................................................................................7.0V
All inputs and outputs w.r.t. VSS ........................................................................................................ -0.6V to Vcc + 1.0V
Storage temperature ...............................................................................................................................-65°C to +150°C
Ambient temperature with power applied ................................................................................................-40°C to +125°C
Soldering temperature of leads (10 seconds) .......................................................................................................+300°C
ESD protection on all pins ..........................................................................................................................................4 kV
† NOTICE: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the
device. This is a stress rating only and functional operation of the device at these or any other conditions above those
indicated in the operational listings of this specification is not implied. Exposure to Absolute Maximum Rating
conditions for extended periods may affect device reliability.
1.1 AC Test Conditions
AC Waveform:
VLO = 2.0V
VHI = Vcc - 0.2V
VHI = 4.0V for
(Note 1)
(Note 2)
Timing Measurement Reference Level
Input
0.5 VCC
Output
0.5 VCC
Note 1: For VCC 4.0V
2: For VCC > 4.0V
DS21131F-page 2
2010 Microchip Technology Inc.

No Preview Available !

93LC76/86
TABLE 1-1: DC CHARACTERISTICS
DC CHARACTERISTICS
Applicable over recommended operating ranges shown below unless otherwise noted:
VCC = +2.5V to +6.0V
Commercial (C): TA = 0°C to +70°C
Industrial (I): TA = -40°C to +85°C
Parameter
Symbol
Min.
Max.
Units
Conditions
High-level input voltage
Low-level input voltage
Low-level output voltage
High-level output voltage
Input leakage current
Output leakage current
Pin capacitance
(all inputs/outputs)
Operating current
VIH1
VIH2
VIL1
VIL2
VOL1
VOL2
VOH1
VOH2
ILI
ILO
CINT
ICC write
ICC read
Standby current
ICCS
2.0
0.7 VCC
-0.3
-0.3
2.4
VCC-0.2
-10
-10
VCC + 1
VCC + 1
0.8
0.2 VCC
0.4
0.2
10
10
7
3
1
500
100
30
V
V
V
V
V
V
V
V
A
A
pF
mA
mA
A
A
A
Note 1: This parameter is periodically sampled and not 100% tested.
VCC 2.7V
VCC < 2.7V
VCC 2.7V
VCC < 2.7V
IOL = 2.1 mA; VCC = 4.5V
IOL =100 A; VCC = VCC Min.
IOH = -400 A; VCC = 4.5V
IOH = -100 A; VCC = VCC Min.
VIN = 0.1V to VCC
VOUT = 0.1V to VCC
(Note 1)
TA = +25°C, FCLK = 1 MHz
VCC = 5.5V
FCLK = 3 MHz; VCC = 5.5V
FCLK = 1 MHz; VCC = 3.0V
CLK = CS = 0V; VCC = 5.5V
CLK = CS = 0V; VCC = 3.0V
DI = PE = VSS
ORG = VSS or VCC
2010 Microchip Technology Inc.
DS21131F-page 3

No Preview Available !

93LC76/86
TABLE 1-2: AC CHARACTERISTICS
AC CHARACTERISTICS
Applicable over recommended operating ranges shown below unless otherwise noted:
VCC = +2.5V to +6.0V
Commercial (C): TA = 0°C to +70°C
Industrial (I): TA = -40°C to +85°C
Parameter
Symbol
Min.
Max.
Units
Conditions
Clock frequency
FCLK
— 3 MHz 4.5V VCC 6.0V
2 MHz 2.5V VCC 4.5V
Clock high time
TCKH
200 — ns 4.5V VCC 6.0V
300 ns 2.5V VCC 4.5V
Clock low time
TCKL
100 — ns 4.5V VCC 6.0V
200 ns 2.5V VCC 4.5V
Chip select setup time
TCSS
50 — ns 4.5V VCC 6.0V, Relative to CLK
100 ns 2.5V VCC 4.5V, Relative to CLK
Chip select hold time
TCSH
0 — ns —
Chip select low time
TCSL
250 — ns Relative to CLK
Data input setup time
TDIS
50 — ns 4.5V VCC 6.0V, Relative to CLK
100 ns 2.5V VCC <4.5V, Relative to CLK
Data input hold time
TDIH
50 — ns 4.5V VCC 6.0V, Relative to CLK
100 ns 2.5V VCC 4.5V, Relative to CLK
Data output delay time
TPD
— 100 ns 4.5V VCC 6.0V, CL = 100 pF
250 ns 2.5V VCC < 4.5V, CL = 100 pF
Data output disable time TCZ
— 100 ns 4.5V VCC 6.0V
500 ns 2.5V VCC < 4.5V (Note 1)
Status valid time
Tsv
— 200 ns 4.5V VCC 6.0V, CL = 100 pF
300 ns 2.5V VCC <4.5V, CL = 100 pF
Program cycle time
TWC
— 5 ms Erase/Write mode
TEC — 15 ms ERAL mode
TWL — 30 ms WRAL mode
Endurance
— 1M — cycles 25°C, Vcc = 5.0V, Block mode
(Note 2)
Note 1: This parameter is periodically sampled and not 100% tested.
2: This parameter is not tested but ensured by characterization. For endurance estimates in a specific appli-
cation, please consult the Total Endurance™ Model which can be obtained from Microchip’s web site at
www.microchip.com.
DS21131F-page 4
2010 Microchip Technology Inc.

No Preview Available !

93LC76/86
TABLE 1-3: INSTRUCTION SET FOR 93LC76: ORG=1 (1X16 ORGANIZATION)
Instruction SB Opcode
Address
Data In Data Out
READ
EWEN
ERASE
ERAL
WRITE
WRAL
EWDS
1 10 X A8 A7 A6 A5 A4 A3 A2 A1 A0 — D15 - D0
1 00 1 1 X X X X X X X X — High-Z
1 11 X A8 A7 A6 A5 A4 A3 A2 A1 A0 — (RDY/BSY)
1 00 1 0 X X X X X X X X — (RDY/BSY)
1 01 X A8 A7 A6 A5 A4 A3 A2 A1 A0 D15 - D0 (RDY/BSY)
1 00 0 1 X X X X X X X X D15 - D0 (RDY/BSY)
1 00 0 0 X X X X X X X X — High-Z
Req. CLK
Cycles
29
13
13
13
29
29
13
TABLE 1-4:
Instruction
READ
EWEN
ERASE
ERAL
WRITE
WRAL
EWDS
INSTRUCTION SET FOR 93LC76: ORG=0 (X8 ORGANIZATION)
SB Opcode
Address
Data In Data Out
1 10 X A9 A8 A7 A6 A5 A4 A3 A2 A1 A0 — D7 - D0
1 00 1 1 X X X X X X X X
— High-Z
1 11 X A9 A8 A7 A6 A5 A4 A3 A2 A1 A0 — (RDY/BSY)
1 00 1 0 X X X X X X X X
— (RDY/BSY)
1 01 X A9 A8 A7 A6 A5 A4 A3 A2 A1 A0 D7 - D0 (RDY/BSY)
1 00 0 1 X X X X X X X X
D7 - D0 (RDY/BSY)
1 00 0 0 X X X X X X X X
— High-Z
Req. CLK
Cycles
22
14
14
14
22
22
14
TABLE 1-5: INSTRUCTION SET FOR 93LC86: ORG=1 (X16 ORGANIZATION)
Instruction SB Opcode
Address
Data In Data Out
READ
EWEN
ERASE
ERAL
WRITE
WRAL
EWDS
1 10 A9 A8 A7 A6 A5 A4 A3 A2 A1 A0 — D15 - D0
1 00 1 1 X X X X X X X X — High-Z
1 11 A9 A8 A7 A6 A5 A4 A3 A2 A1 A0 — (RDY/BSY)
1 00 1 0 X X X X X X X X — (RDY/BSY)
1 01 A9 A8 A7 A6 A5 A4 A3 A2 A1 A0 D15 - D0 (RDY/BSY)
1 00 0 1 X X X X X X X X D15 - D0 (RDY/BSY)
1 00 0 0 X X X X X X X X — High-Z
Req. CLK
Cycles
29
13
13
13
29
29
13
TABLE 1-6:
Instruction
READ
EWEN
ERASE
ERAL
WRITE
WRAL
EWDS
INSTRUCTION SET FOR 93LC86: ORG=0 (X8 ORGANIZATION)
SB Opcode
Address
Data In
Data Out
Req. CLK
Cycles
1 10 A10 A9 A8 A7 A6 A5 A4 A3 A2 A1 A0 — D7 - D0
22
1 00 1 1 X X X X X X X X
— High-Z
14
1 11 A10 A9 A8 A7 A6 A5 A4 A3 A2 A1 A0 — (RDY/BSY) 14
1 00 1 0 X X X X X X X X
— (RDY/BSY)
14
1 01 A10 A9 A8 A7 A6 A5 A4 A3 A2 A1 A0 D7 - D0 (RDY/BSY) 22
1 00 0 1 X X X X X X X X
D7 - D0 (RDY/BSY)
22
1 00 0 0 X X X X X X X X
— High-Z
14
2010 Microchip Technology Inc.
DS21131F-page 5