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STS5N150
N-CHANNEL 150V - 0.045 - 5A SO-8
LOW GATE CHARGE STripFET™ POWER MOSFET
TARGET DATA
TYPE
VDSS
RDS(on)
ID
STS5N150
150 V <0.06
5A
s TYPICAL RDS(on) = 0.045
s EXTREMELY HIGH dv/dt CAPABILITY
s EXTREMELY LOW GATE CHARGE
DESCRIPTION
This MOSFET series realized with STMicroelectronics
unique STripFET process has specifically been designed
to minimize input capacitance and gate charge. It is
therefore suitable as primary switch in advanced high-
efficiency, high-frequency isolated DC-DC converters for
Telecom and Computer applications. It is also intended
for any applications with low gate drive requirements.
SO-8
APPLICATIONS
s HIGH-EFFICIENCY DC-DC CONVERTERS
s UPS AND MOTOR CONTROL
INTERNAL SCHEMATIC DIAGRAM
Ordering Information
SALES TYPE
STS5N150
MARKING
S5N150
PACKAGE
SO-8
PACKAGING
TAPE & REEL
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 k)
VGS Gate- source Voltage
ID Drain Current (continuous) at TC = 25°C
ID Drain Current (continuous) at TC = 100°C
IDM(•) Drain Current (pulsed)
Ptot Total Dissipation at TC = 25°C
Tstg Storage Temperature
Tj Operating Junction Temperature
(•) Pulse width limited by safe operating area.
Value
150
150
± 20
5
3
20
2.5
-55 to 150
June 2003
This is preliminary information on a new product forseen to be developped. Details are subject to change without notice
Unit
V
V
V
A
A
A
W
°C
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STS5N150
THERMAL DATA
Rthj-amb (*)Thermal Resistance Junction-ambient
(*) When Mounted on 1 inch2 FR-4 board, 2 oz of Cu and t [ 10 sec.
Max
50
ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified)
OFF
Symbol
Parameter
Test Conditions
Min. Typ.
V(BR)DSS Drain-source
Breakdown Voltage
ID = 250 µA, VGS = 0
150
IDSS
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
VDS = Max Rating TC = 125°C
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ± 20 V
°C/W
Max.
Unit
V
1
10
±100
µA
µA
nA
ON (*)
Symbol
VGS(th)
RDS(on)
Parameter
Gate Threshold Voltage
Static Drain-source On
Resistance
Test Conditions
VDS = VGS
ID = 250 µA
VGS = 10 V
ID = 2.5 A
Min.
2
Typ.
0.045
Max.
0.06
Unit
V
DYNAMIC
Symbol
gfs (*)
Ciss
Coss
Crss
Parameter
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
VDS = 75 V
ID = 5 A
VDS = 25V, f = 1 MHz, VGS = 0
Min.
Typ.
TBD
TBD
TBD
TBD
Max.
Unit
S
pF
pF
pF
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STS5N150
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol
Parameter
Test Conditions
td(on)
tr
Turn-on Delay Time
Rise Time
VDD = 75 V
ID = 2.5 A
RG = 4.7
VGS = 10 V
(Resistive Load, Figure 1)
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDD= 120V ID= 5A VGS= 10V
(see test circuit, Figure 2)
Min.
Typ.
TBD
TBD
TBD
TBD
TBD
Max.
28
Unit
ns
ns
nC
nC
nC
SWITCHING OFF
Symbol
Parameter
td(off)
tf
Turn-off Delay Time
Fall Time
Test Conditions
VDD = 75 V
ID = 2.5 A
RG = 4.7Ω,
VGS = 10 V
(Resistive Load, Figure 1)
Min.
Typ.
TBD
TBD
Max.
Unit
ns
ns
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
ISD
ISDM ()
Source-drain Current
Source-drain Current (pulsed)
VSD (*) Forward On Voltage
ISD = 5 A
VGS = 0
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
(*)Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
(•)Pulse width limited by safe operating area.
ISD = 5 A
di/dt = 100A/µs
VDD = 50 V
Tj = 150°C
(see test circuit, Figure 3)
Min.
Typ.
TBD
TBD
TBD
Max.
5
20
1.2
Unit
A
A
V
ns
nC
A
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STS5N150
Fig. 1: Switching Times Test Circuits For Resistive
Load
Fig. 2: Gate Charge test Circuit
Fig. 3: Test Circuit For Diode Recovery Behaviour
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DIM.
A
a1
a2
a3
b
b1
C
c1
D
E
e
e3
F
L
M
S
MIN.
0.1
0.65
0.35
0.19
0.25
4.8
5.8
3.8
0.4
SO-8 MECHANICAL DATA
mm
TYP.
1.27
3.81
MAX.
MIN.
1.75
0.25 0.003
1.65
0.85 0.025
0.48 0.013
0.25 0.007
0.5 0.010
45 (typ.)
5.0 0.188
6.2 0.228
4.0 0.14
1.27 0.015
0.6
8 (max.)
STS5N150
inch
TYP.
0.050
0.150
MAX.
0.068
0.009
0.064
0.033
0.018
0.010
0.019
0.196
0.244
0.157
0.050
0.023
0016023
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