BAS79B.pdf 데이터시트 (총 3 페이지) - 파일 다운로드 BAS79B 데이타시트 다운로드

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Silicon Switching Diodes
q Switching applications
q High breakdown voltage
q Common cathode
BAS 79 A
… BAS 79 D
Type
BAS 79 A
BAS 79 B
BAS 79 C
BAS 79 D
Marking
BAS 79 A
BAS 79 B
BAS 79 C
BAS 79 D
Ordering Code
(tape and reel)
Q62702-A914
Q62702-A915
Q62702-A916
Q62702-A917
Pin Configuration
Package1)
SOT-223
Maximum Ratings
Parameter
Symbol
Reverse voltage
VR
Peak reverse voltage
VRM
Forward current
IF
Peak forward current
IFM
Surge forward current, t = 1 µs
IFS
Total power dissipation, TS = 114 ˚C2) Ptot
Junction temperature
Tj
Storage temperature range
Tstg
BAS
79 A
50
50
Values
BAS BAS
79 B 79 C
100 200
100 200
1
1
10
1.2
150
– 65 … + 150
BAS
79 D
400
400
Unit
V
A
W
˚C
Thermal Resistance
Junction - ambient2)
Junction - soldering point
Rth JA
Rth JS
1) For detailed information see chapter Package Outlines.
2) Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.
170
30
K/W
Semiconductor Group
1
5.91

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BAS 79 A
… BAS 79 D
Electrical Characteristics
at TA = 25 ˚C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min. typ. max.
DC characteristics
Breakdown voltage
I(BR) = 100 µA
Forward voltage1)
IF = 1 A
IF = 2 A
Reverse current
VR = VR max
VR = VR max, TA = 150 ˚C
BAS 79 A
BAS 79 B
BAS 79 C
BAS 79 D
V(BR)
VF
IR
50 –
100 –
200 –
400 –
––
––
––
––
V
1.6
2
µA
1
50
AC characteristics
Diode capacitance
VR = 0, f = 1 MHz
Reverse recovery time
IF = 200 mA, IR = 200 mA, RL = 100
measured at IR = 20 mA
CD – 10 – pF
trr – 1 – µs
Test circuit for reverse recovery time
Pulse generator: tp = 5 µs, D = 0.05
tr = 0.6 ns, Rj = 50
Vp = VR + IF × Rj
Oscillograph: R = 50
tr = 0.35 ns
C 1 pF
1) Pulse test conditions: t 300 µs, D = 2 %.
Semiconductor Group
2

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Forward current IF = f (TA*; TS)
* Package mounted on epoxy
BAS 79 A
… BAS 79 D
Forward current IF = f (VF)
TA = 25 ˚C
Reverse current IR = f (TA)
VCE = 10 V
Semiconductor Group
3