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DISCRETE SEMICONDUCTORS
DATA SHEET
halfpage
M3D087
BAT120 series
Schottky barrier double diodes
Product specification
Supersedes data of 1998 Jan 21
1998 Oct 30

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Philips Semiconductors
Schottky barrier double diodes
Product specification
BAT120 series
FEATURES
Low switching losses
Capability of absorbing very high
surge current
Fast recovery time
Guard ring protected
Plastic SMD package.
APPLICATIONS
Low power switched-mode power
supplies
Rectification
Polarity protection.
PINNING
BAT120
PIN
ACS
1 k1 a1 a1
2 n.c. n.c. n.c.
3 k2 a2 k2
4 a1, a2 k1, k2 k1, a2
age 4
DESCRIPTION
Planar Schottky barrier double diodes
encapsulated in a SOT223 plastic
SMD package
MARKING
TYPE NUMBER
BAT120A
BAT120C
BAT120S
MARKING
CODE
AT120A
AT120C
AT120S
1
Top view
23
MSB002 - 1
Fig.1 Simplified outline
(SOT223) and pin
configuration.
page
4
13
2 n.c. MGL171
Fig.2 BAT120A diode
configuration (symbol).
page
4
13
2 n.c. MGL172
Fig.3 BAT120C diode
configuration (symbol).
page
4
13
2 n.c.
MGL173
Fig.4 BAT120S diode
configuration (symbol).
1998 Oct 30
2

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Philips Semiconductors
Schottky barrier double diodes
Product specification
BAT120 series
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
Per diode
VR continuous reverse voltage
IF continuous forward current
IFSM non-repetitive peak forward current
IRSM
Tstg
Tj
Tamb
non-repetitive peak reverse current
storage temperature
junction temperature
operating ambient temperature
tp < 10 ms; half sinewave;
JEDEC method
tp = 100 µs
MIN. MAX. UNIT
25 V
1A
10 A
0.5 A
65 +150 °C
125 °C
65 +125 °C
ELECTRICAL CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
Per diode
VF forward voltage
IR reverse current
Cd diode capacitance
Note
1. Pulse test: tp = 300 µs; δ = 0.02.
CONDITIONS
TYP. MAX. UNIT
see Fig.5
IF = 100 mA
260 300 mV
IF = 1 A
400 450 mV
VR = 20 V; note 1; see Fig.6
80
500 µA
VR = 25 V; note 1; see Fig.6
1
mA
VR = 20 V; Tj = 100 °C; note 1
10 mA
f = 1 MHz; VR = 4 V; see Fig.7 100
pF
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
Rth j-a
thermal resistance from junction to ambient note 1
Note
1. Refer to SOT223 standard mounting conditions.
VALUE
100
UNIT
K/W
1998 Oct 30
3

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Philips Semiconductors
Schottky barrier double diodes
GRAPHICAL DATA
104
handbook, halfpage
IF
(mA)
103
102
10
(1)
(2)
(3)
(4)
MBK572
1
0 0.2 0.4 0.6 0.8 1.0
VF (V)
(1) Tamb = 125 °C.
(2) Tamb = 100 °C.
(3) Tamb = 75 °C.
(4) Tamb = 25 °C.
Fig.5 Forward current as a function of forward
voltage; typical values.
Product specification
BAT120 series
104
handbook, halfpage
IR
(mA)
103
102
10
MBK573
(1)
(2)
(3)
(4)
1
0 10 20 VR (V) 30
(1) Tamb = 125 °C.
(2) Tamb = 100 °C.
(3) Tamb = 75 °C.
(4) Tamb = 25 °C.
Fig.6 Reverse current as a function of reverse
voltage; typical values.
103
handbook, halfpage
Cd
(pF)
102
MBK571
10
0 10 20 VR (V) 30
f = 1 MHz; Tamb = 25 °C.
Fig.7 Diode capacitance as a function of reverse
voltage; typical values.
1998 Oct 30
4

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Philips Semiconductors
Schottky barrier double diodes
PACKAGE OUTLINE
Plastic surface mounted package; collector pad for good heat transfer; 4 leads
Product specification
BAT120 series
SOT223
DB
E AX
y
b1
4
c
HE
vM A
1 23
e1 bp
e
wM B
A1
Q
A
detail X
Lp
0 2 4 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT A
A1 bp b1
c
D
E
e
e1 HE Lp
Q
v
w
y
mm
1.8 0.10 0.80 3.1 0.32 6.7
1.5 0.01 0.60 2.9 0.22 6.3
3.7
3.3
4.6
2.3
7.3
6.7
1.1
0.7
0.95
0.85
0.2
0.1
0.1
OUTLINE
VERSION
SOT223
1998 Oct 30
IEC
REFERENCES
JEDEC
EIAJ
5
EUROPEAN
PROJECTION
ISSUE DATE
96-11-11
97-02-28