BAT14-020D.pdf 데이터시트 (총 2 페이지) - 파일 다운로드 BAT14-020D 데이타시트 다운로드

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Silicon Schottky Diodes
q Beam lead technology
q Low dimension
q High performance
q Medium barrier
BAT 14- … D
ESD: Electrostatic discharge sensitive device, observe handling precautions!
Type
BAT 14-020 D
BAT 14-050 D
BAT 14-090 D
BAT 14-110 D
Marking
Ordering Code
Q62702-D1259
Q62702-D1268
Q62702-D1276
Q62702-D1285
Pin Configuration
Package1)
D
Maximum Ratings
Parameter
Reverse voltage
Forward current
Junction temperature
Storage temperature range
Operating temperature range
Symbol
VR
IF
Tj
Tstg
Top
Values
BAT 14-020 D BAT 14-090 D
BAT 14-050 D BAT 14-110 D
44
100 50
175
– 65 … + 150
– 65 … + 150
Unit
V
mA
˚C
1) For detailed information see chapter Package Outlines.
Semiconductor Group
1

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BBAATT1144- -…...D
Electrical Characteristics
at TA = 25 ˚C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min. typ. max.
DC Characteristics
Breakdown voltage
IR = 10 µA
Diode capacitance
VR = 0, f = 1 MHz
BAT 14-020 D
BAT 14-050 D
BAT 14-090 D
BAT 14-110 D
Forward voltage
IF = 1 mA
IF = 10 mA
BAT 14-020 D
BAT 14-050 D
BAT 14-090 D
BAT 14-110 D
BAT 14-020 D
BAT 14-050 D
BAT 14-090 D
BAT 14-110 D
Single sideband noise figure
FIF = 1.5 dB, PLO = 0 dBm, fIF = 10.7 MHz
f = 3.0 GHz
BAT 14-020 D
f = 6.0 GHz
BAT 14-050 D
f = 9.3 GHz
BAT 14-090 D
f = 16 GHz
BAT 14-110 D
Differential forward resistance
IF = 10 mA
IF = 50 mA
BAT 14-020 D
BAT 14-050 D
BAT 14-090 D
BAT 14-110 D
V(BR)
CT
VF
FSSB
rf
4
0.30
0.20
0.14
0.10
0.45
0.47
0.49
0.50
0.55
0.57
0.60
0.65
0.35
0.25
0.15
0.12
V
pF
V
dB
6.0 –
6.5 –
6.5 –
7.0 –
3.5 –
4.0 –
7.0 –
10.0 –
Semiconductor Group
2