BAT14-099R.pdf 데이터시트 (총 2 페이지) - 파일 다운로드 BAT14-099R 데이타시트 다운로드

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Silicon Crossover Ring Quad Schottky Diode
q Medium barrier diode for double balanced mixers,
phase detectors and modulators
BAT 14-099R
ESD: Electrostatic discharge sensitive device, observe handling precautions!
Type
Marking Ordering Code
(tape and reel)
BAT 14-099R S8
Q62702-A0042
Pin Configuration
Package1)
SOT-143
Maximum Ratings per Diode
Parameter
Forward current
Power dissipation, TS 70 ˚C
Storage temperature range
Operating temperature range
Thermal Resistance per Diode
Junction – ambient2)
Junction – soldering point
Symbol
IF
Ptot
Tstg
Top
Values
Unit
90 mA
100 mW
– 55 … + 150 ˚C
– 55 … + 150
Rth JA
Rth JS
1020
780
K/W
1) For detailed information see chapter Package Outlines.
2) Package mounted on alumina 15 mm × 16.7 mm to 0.7 mm.
Semiconductor Group
1
02.96

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BAT 14-099R
Electrical Characteristics per Diode
at TA = 25 ˚C, unless otherwise specified.
Parameter
Symbol
Forward voltage
IF = 1 mA
IF = 10 mA
Forward voltage matching1)
IF = 10 mA
Diode capacitance
VR = 0, f= 1 MHz
Forward resistance
IF = 10 mA / 50 mA
VF
VF
CT
RF
min.
Values
typ. max.
0.4
0.48
20
0.38
5.5 –
Unit
V
mV
pF
Forward current IF = f (VF)
Forward current IF = f (TS; TA*)
*Package mounted on alumina
1) VF is the difference between the lowest and the highest VF in the component.
Semiconductor Group
2