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DISCRETE SEMICONDUCTORS
DATA SHEET
ook, halfpage
M3D087
BAT140 series
Schottky barrier double diodes
Product specification
File under Discrete Semiconductors, SC01
1997 Oct 03

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Philips Semiconductors
Schottky barrier double diodes
Product specification
BAT140 series
FEATURES
Low switching losses
Capability of absorbing very high
surge current
Fast recovery time
Guard ring protected
Plastic SMD package.
APPLICATIONS
Low power switched-mode power
supplies
Rectification
Polarity protection.
PINNING
PIN
A
1 k1
2 n.c.
3 k2
4 a1, a2
BAT140
C
a1
n.c.
a2
k1, k2
S
a1
n.c.
k2
k1, a2
age 4
DESCRIPTION
Planar Schottky barrier double diodes
encapsulated in a SOT223 plastic
SMD package.
MARKING
TYPE NUMBER
BAT140A
BAT140C
BAT140S
MARKING
CODE
AT140A
AT140C
AT140S
1
Top view
23
MSB002 - 1
Fig.1 Simplified outline
(SOT223) and pin
configuration.
page
4
13
2 n.c. MGL171
Fig.2 BAT140A diode
configuration (symbol).
page
4
1
3
2 n.c. MGL172
Fig.3 BAT140C diode
configuration (symbol).
page
1
4
3
2 n.c.
MGL173
Fig.4 BAT140S diode
configuration (symbol).
1997 Oct 03
2

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Philips Semiconductors
Schottky barrier double diodes
Product specification
BAT140 series
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN. MAX. UNIT
Per diode
VR
IF
IF(AV)
IFSM
continuous reverse voltage
continuous forward current
average forward current
non-repetitive peak forward current
Tamb = 65 °C;
Rth j-a = 80 K/W; note 1;
VR(equiv) = 0.2 V; note 2
t = 8.3 µs half sinewave;
JEDEC method
IRSM
non-repetitive peak reverse current tp = 100 µs
Tstg storage temperature
Tj junction temperature
40 V
1A
1A
10 A
0.5 A
65 +150 °C
125 °C
Notes
1. Refer to SOT223 standard mounting conditions.
2. For Schottky barrier diodes thermal run-away has to be considered, as in some applications, the reverse power
losses PR are a significant part of the total power losses. Nomograms for determination of the reverse power losses
PR and IF(AV) rating will be available on request.
ELECTRICAL CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
Per diode
VF forward voltage
IR reverse current
Cd diode capacitance
Note
1. Pulsed test: tp = 300 µs; δ = 0.02.
CONDITIONS
see Fig.5
IF = 100 mA; note 1
IF = 1 A; note 1
VR = 10 V; note 1; see Fig.6
VR = 40 V; note 1; see Fig.6
VR = 4 V; f = 1 MHz; see Fig.7
TYP. MAX. UNIT
280 330 mV
460 500 mV
15 40 µA
60 300 µA
65 80 pF
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
Rth j-a
thermal resistance from junction to ambient note 1
Note
1. Refer to SOT223 standard mounting conditions.
VALUE
100
UNIT
K/W
1997 Oct 03
3

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Philips Semiconductors
Schottky barrier double diodes
GRAPHICAL DATA
handboo1k,0h4alfpage
IF
(mA)
10 3
10 2
10
(1)
(2)
(3)
(4)
MLC388
1
0 0.2 0.4 0.6 0.8 1.0
VF (V)
(1) Tamb = 125 °C.
(2) Tamb = 100 °C.
(3) Tamb = 75 °C.
(4) Tamb = 25 °C.
Fig.5 Forward current as a function of forward
voltage; typical values.
Product specification
BAT140 series
handboo1k,0h4alfpage
IR
(µA)
10 3
10 2
10
MLC389
(1)
(2)
(3)
(4)
1
0 10 20 30 VR(V) 40
(1) Tamb = 125 °C.
(2) Tamb = 100 °C.
(3) Tamb = 75 °C.
(4) Tamb = 25 °C.
Fig.6 Reverse current as a function of reverse
voltage; typical values.
10 3
handbook, halfpage
Cd
(pF)
10 2
MLC390
10
0
8 16 24 32 VR(V) 40
f = 1 MHz.
Fig.7 Diode capacitance as a function of reverse
voltage; typical values.
1997 Oct 03
4

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Philips Semiconductors
Schottky barrier double diodes
PACKAGE OUTLINE
Plastic surface mounted package; collector pad for good heat transfer; 4 leads
Product specification
BAT140 series
SOT223
DB
E AX
y
b1
4
c
HE
vM A
1 23
e1 bp
e
wM B
A1
Q
A
detail X
Lp
0 2 4 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT A
A1 bp b1
c
D
E
e
e1 HE Lp
Q
v
w
y
mm
1.8 0.10 0.80 3.1 0.32 6.7
1.5 0.01 0.60 2.9 0.22 6.3
3.7
3.3
4.6
2.3
7.3
6.7
1.1
0.7
0.95
0.85
0.2
0.1
0.1
OUTLINE
VERSION
SOT223
1997 Oct 03
IEC
REFERENCES
JEDEC
EIAJ
5
EUROPEAN
PROJECTION
ISSUE DATE
96-11-11
97-02-28