BAT15-03W.pdf 데이터시트 (총 16 페이지) - 파일 다운로드 BAT15-03W 데이타시트 다운로드

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Silicon Schottky Diodes
Low barrier type for DBS mixer applications
up to 12 GHz, phase detectors and modulators
Low noise figure
Pb-free (RoHS compliant) package
BAT15...
BAT15-02EL
BAT15-02ELS
BAT15-03W

BAT15-04W
!
, ,

BAT15-05W
!
, ,

BAT15-099
"!
, ,

BAT15-099R
"!
, ,! ," ,

ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type
BAT15-02EL
BAT15-02ELS
BAT15-03W
BAT15-04W
BAT15-05W
BAT15-099
BAT15-099R
Package
TSLP-2-19
TSSLP-2-3
SOD323
SOT323
SOT323
SOT143
SOT143
Configuration
single, leadless
single, leadless
single
series
common cathode
anti-parallel pair
cross-over ring
LS(nH)
0.4
0.2
1.8
1.4
1.4
2
2
Marking
NN
S underline
white P
S8s
S5s
S5s
S6s
1 2015-01-27

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BAT15...
Maximum Ratings at TA = 25 °C, unless otherwise specified
Parameter
Symbol
Diode reverse voltage
Forward current
Total power dissipation
BAT15-02ELS, TS 73 °C
BAT15-02EL, TS 76 °C
BAT15-03W, TS 70 °C
BAT15-04W, TS 68 °C
BAT15-05W, TS 65 °C
BAT15-099, TS 48 °C
BAT15-099R, TS 67 °C
VR
IF
Ptot
Junction temperature
Operating temperature range
Storage temperature
Tj
Top
Tstg
Thermal Resistance
Parameter
Junction - soldering point1)
BAT15-02ELS
BAT15-02EL
BAT15-03W
BAT15-04W
BAT15-05W
BAT15-099
BAT15-099R
Symbol
RthJS
Value
4
110
100
100
100
100
100
100
100
150
-55 ... 150
-55 ... 150
Value
770
780
795
820
850
1020
830
1For calculation of RthJA please refer to Application Note AN077 (Thermal Resistance Calculation)
Unit
V
mA
°C
Unit
2 2015-01-27

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BAT15...
Electrical Characteristics at TA = 25 °C, unless otherwise specified
Parameter
Symbol
Values
min. typ. max.
DC Characteristics
Breakdown voltage
I(BR) = 100 µA
Reverse current
VR = 1 V
Forward voltage
IF = 1 mA
IF = 10 mA
Forward voltage matching1)
IF = 10 mA
V(BR)
IR
VF
VF
4- -
- -5
0.16
0.25
-
0.23
0.32
-
0.32
0.41
20
AC Characteristics
Diode capacitance
CT
VR = 0 V, f = 1 MHz, BAT15-02ELS
- - 0.23
VR = 0 V, f = 1 MHz, BAT15-099R
- - 0.5
VR = 0 V, f = 1 MHz, all others types
- - 0.35
Differential forward resistance
IF = 10 mA / 50 mA
RF - 5.5 -
1VF is the difference between lowest and highest VF in a multiple diode component.
Unit
V
µA
V
mV
pF
3 2015-01-27

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BAT15...
Diode capacitance CT = ƒ (VR)
f = 1MHz
Reverse current IR = ƒ(VR)
TA = Parameter
0.5
C T pF
0.4
0.3
0.2
0.1
EHD07082
10 3
ΙR µA
10 2
10 1
10 0
EHD07081
TA =125 C
85 C
25 C
0.0
0
2
Forward current IF = ƒ (VF)
TA = Parameter
V
VR
4
10 -1
0
12
3V
VR
4
Forward current IF = ƒ (TS)
BAT15-02EL
10 2 BAT 15-099R
ΙF mA
10 1
10 0
10 -1
10 -2
0.0
EHD07077
120
mA
100
TA = -40 ˚C
25 ˚C
85 ˚C
125 ˚C
90
80
70
60
50
40
30
20
10
0.5
V 1.0
00 15 30 45 60 75 90 105 120 °C 150
VF TS
4 2015-01-27

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BAT15...
Forward current IF = ƒ (TS)
BAT15-02ELS
Forward current IF = ƒ (TS)
BAT15-03W
120
mA
100
90
80
70
60
50
40
30
20
10
00 15 30 45 60 75 90 105 120 °C 150
TS
120
mA
100
90
80
70
60
50
40
30
20
10
00 15 30 45 60 75 90 105 120 °C 150
TS
Forward current IF = ƒ (TS)
BAT15-04W
Forward current IF = ƒ (TS)
BAT15-05W
120
mA
120
mA
100
90
80
70
60
50
40
30
20
10
00 15 30 45 60 75 90 105 120 °C 150
TS
100
90
80
70
60
50
40
30
20
10
00 15 30 45 60 75 90 105 120 °C 150
TS
5 2015-01-27