DCR5980Z.pdf 데이터시트 (총 9 페이지) - 파일 다운로드 DCR5980Z 데이타시트 다운로드

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DCR5980Z
FEATURES
s Double Side Cooling
s High Surge Capability
s Low Inductance Internal Construction
APPLICATIONS
s High Power Converters
s DC Motor Control
s High Voltage Power Supplies
DCR5980Z
Phase Control Thyristor
Target Information
DS5482-1.1 February 2002
KEY PARAMETERS
VDRM
IT(AV)
ITSM
dV/dt
(max)
(max)
dI/dt
1800V
5985A
98000A
1000V/µs
250A/µs
VOLTAGE RATINGS
Part and Ordering
Number
DCR5980Z18
DCR5980Z16
DCR5980Z14
DCR5980Z12
Repetitive Peak
Voltages
VDRM and VDRM
V
1800
1600
1400
1200
Lower voltage grades available.
Conditions
Tvj = 0˚ to 125˚C,
IDRM = IRRM = 500mA,
V , V t = 10ms,
DRM RRM p
VDSM & VRSM =
V & V + 100V
DRM
RRM
respectively
ORDERING INFORMATION
When ordering, select the required part number shown in the
Voltage Ratings selection table.
For example:
DCR5980Z14
Note: Please use the complete part number when ordering and
quote this number in any future correspondance relating to your
order.
Outline type code: Z
(See Package Details for further information)
Fig. 1 Package outline
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DCR5980Z
CURRENT RATINGS
Tcase = 60˚C unless stated otherwise.
Symbol
Parameter
Double Side Cooled
I Mean on-state current
T(AV)
IT(RMS)
RMS value
IT Continuous (direct) on-state current
Single Side Cooled
IT(AV)
IT(RMS)
IT
Mean on-state current
RMS value
Continuous (direct) on-state current
Tcase = 80˚C unless stated otherwise.
Symbol
Parameter
Double Side Cooled
IT(AV) Mean on-state current
IT(RMS)
RMS value
IT Continuous (direct) on-state current
Single Side Cooled
IT(AV)
IT(RMS)
IT
Mean on-state current
RMS value
Continuous (direct) on-state current
Test Conditions
Half wave resistive load
-
-
Half wave resistive load
-
-
Test Conditions
Half wave resistive load
-
-
Half wave resistive load
-
-
Max. Units
5985
9400
8400
A
A
A
3820
6000
4920
A
A
A
Max. Units
4650
7300
6360
A
A
A
2910
4570
3630
A
A
A
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DCR5980Z
SURGE RATINGS
Symbol
Parameter
ITSM Surge (non-repetitive) on-state current
I2t I2t for fusing
I Surge (non-repetitive) on-state current
TSM
I2t I2t for fusing
DYNAMIC CHARACTERISTICS
Symbol
Parameter
IRRM/IRRM
dV/dt
Peak reverse and off-state current
Max. linear rate of rise of off-state voltage
dI/dt Rate of rise of on-state current
VT(TO)
rT
t
gd
Threshold voltage
On-state slope resistance
Delay time
IL Latching current
I Holding current
H
Test Conditions
10ms half sine, T = 125˚C
case
VR = 50% VRRM - 1/4 sine
10ms half sine, Tcase = 125˚C
VR = 0
Max. Units
78.0 kA
30.4 x 106 A2s
98.0 kA
48 x 106 A2s
Test Conditions
Min. Max. Units
At VRRM/VDRM, Tcase = 125˚C
To 67% V , T = 125˚C
DRM j
From 67% VDRM to 1100A Repetitive 50Hz
Gate source 1A,
Non-repetitive
-
-
-
-
500 mA
1000 V/µs
250 A/µs
500 A/µs
tr = 0.5µs, Tj = 125˚C
At T = 125˚C
vj
At Tvj = 125˚C
VD = 67% VDRM, gate source 20V, 10
tr = 0.5µs, Tj = 25˚C
Tj = 25˚C, VD = 5V
Tj = 25˚C, VG–K =
- 0.77 V
- 0.05 m
1.0 1.5 µs
150 750 mA
40 200 mA
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DCR5980Z
THERMAL AND MECHANICAL RATINGS
Symbol
Parameter
Rth(j-c)
Thermal resistance - junction to case
Rth(c-h)
Thermal resistance - case to heatsink
Tvj Virtual junction temperature
Tstg Storage temperature range
Fm Clamping force
Test Conditions
Double side cooled
DC
Single side cooled
Anode DC
Cathode DC
Clamping force 83.0kN Double side
(with mounting compound) Single side
On-state (conducting)
Reverse (blocking)
Min. Max. Units
- 0.0065 ˚CW
- 0.013 ˚CW
- 0.013 ˚CW
- 0.001 ˚CW
- 0.002 ˚CW
- 135 ˚C
- 125 ˚C
–55 125 ˚C
74.0 91.0 kN
GATE TRIGGER CHARACTERISTICS AND RATINGS
Symbol
Parameter
V
GT
IGT
VGD
VFGM
V
FGN
VRGM
I
FGM
PGM
PG(AV)
Gate trigger voltage
Gate trigger current
Gate non-trigger voltage
Peak forward gate voltage
Peak forward gate voltage
Peak reverse gate voltage
Peak forward gate current
Peak gate power
Mean gate power
Test Conditions
VDRM = 5V, Tcase = 25oC
VDRM = 5V, Tcase = 25oC
At V T = 125oC
DRM case
Anode positive with respect to cathode
Anode negative with respect to cathode
-
Anode positive with respect to cathode
See table, gate characteristics curve
-
Max.
3.5
500
0.25
30
0.25
5
30
150
10
Units
V
mA
V
V
V
V
A
W
W
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DCR5980Z
CURVES
8000
7000
6000
5000
4000
3000
2000
1000
0
0.7 0.75
0.8 0.85 0.9 0.95 1 1.05
Instant on-state voltage, VT - (V)
1.1 1.15
6000
5000
4000
3000
2000
1000
0
0
dc
1/2 wave
3 phase
6 phase
1000 2000 3000 4000 5000
Mean on-state current, IT(AV) - (A)
6000
Fig.2 Maximum (limit) on-state characteristics
VTM Equation:-
VTM = A + Bln (IT) + C.IT+D.IT
Where
A = 0.4624
B = 0.0275
C = 2.2501 x 10–5
D = 0.0032
these values are valid for Tj = 125˚C for IT 500A to 7000A
Fig.3 Power dissipation
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