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TetraFET
D1007UK
MECHANICAL DATA
B
(2 pls)
E
A
C2
1
3
54
G (4 pls)
F
K
D
PIN 1
PIN 3
PIN 5
HJ
I
DK
SOURCE (COMMON) PIN 2
DRAIN 2
PIN 4
GATE 1
MN
DRAIN 1
GATE 2
DIM mm
A 6.45
B 1.65R
C 45°
D 16.51
E 6.47
F 18.41
G 1.52
H 4.82
I 24.76
J 1.52
K 0.81R
M 0.13
N 2.16
Tol. Inches Tol.
0.13 0.254 0.005
0.13 0.065R 0.005
5° 45° 5°
0.76 0.650 0.03
0.13 0.255 0.005
0.13 0.725 0.005
0.13 0.060 0.005
0.25 0.190 0.010
0.13 0.975 0.005
0.13 0.060 0.005
0.13 0.032R 0.005
0.02 0.005 0.001
0.13 0.085 0.005
METAL GATE RF SILICON FET
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
40W – 28V – 500MHz
PUSH–PULL
FEATURES
• SIMPLIFIED AMPLIFIER DESIGN
• SUITABLE FOR BROAD BAND APPLICATIONS
• LOW Crss
• USEFUL PO at 1 GHz
• LOW NOISE
• HIGH GAIN – 13 dB MINIMUM
APPLICATIONS
HF/VHF/UHF COMMUNICATIONS
from 1 MHz to 1 GHz
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
PD Power Dissipation
100W
BVDSS
Drain – Source Breakdown Voltage *
70V
BVGSS
Gate – Source Breakdown Voltage *
±20V
ID(sat)
Drain Current *
5A
Tstg Storage Temperature
–65 to 150°C
Tj Maximum Operating Junction Temperature
200°C
* Per Side
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Prelim. 6/00

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D1007UK
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
Parameter
Test Conditions
Min.
DrainSource
BVDSS Breakdown Voltage
PER SIDE
VGS = 0
ID = 100mA
70
IDSS
Zero Gate Voltage
Drain Current
VDS = 28V
VGS = 0
IGSS Gate Leakage Current
VGS(th) Gate Threshold Voltage *
gfs Forward Transconductance *
GPS
h
Common Source Power Gain
Drain Efficiency
VSWR Load Mismatch Tolerance
VGS = 20V
VDS = 0
ID = 10mA
VDS = VGS
VDS = 10V
ID = 1A
TOTAL DEVICE
PO = 40W
VDS = 28V
IDQ = 0.4A
f = 400MHz
1
0.8
13
50
20:1
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
PER SIDE
VDS = 28V VGS = 5V f = 1MHz
VDS = 28V VGS = 0 f = 1MHz
VDS = 28V VGS = 0 f = 1MHz
Typ.
Max. Unit
V
1 mA
1 mA
7V
S
dB
%
60 pF
30 pF
2.5 pF
* Pulse Test: Pulse Duration = 300 ms , Duty Cycle £ 2%
HAZARDOUS MATERIAL WARNING
The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly
toxic and care must be taken during handling and mounting to avoid damage to this area.
THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE.
THERMAL DATA
RTHjcase
Thermal Resistance Junction Case
Max. 1.75°C / W
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Prelim. 6/00

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D1007UK
60 80
50 70
40
P out
30
W
20
10
60
D r a in E ffic ie n c y
50
%
f = 400M H z
Id q = 0 .4 A
V ds = 28V
40
30
0 20
0 2 4 6 8 10 12
P in W
Pout
D r a in E ffic ie n c y
Figure 1
Power Output and efficiency vs. Power Input.
60 18
50 16
40
P out
30
W
20
10
f = 400M H z
Id q = 0 .4 A
V ds = 28V
14
G a in
12 dB
10
8
06
0 2 4 6 8 10 12
P in W
Pout
G a in
Figure 2
Power Output and Gain vs. Power Input.
0
-1 0
-2 0
IM D 3
-3 0
dB c
-4 0
-5 0
-6 0
0
OPTIMUM SOURCE AND LOAD IMPEDANCE
f1 = 4 0 0 M H z
f2 = 4 0 0 .1 M H z
Id q = 0 .4 A
V ds = 28V
10 20 30 40 50 60
P out W PEP
IM D 3
Frequency
MHz
400MHZ
ZS
W
10.7 - j35.4
Figure 3
IMD Vs. Output Power.
Typical S Parameters
! VDS = 28V, IDQ = 1A
# MHZ S MA R 50
!Freq
!MHz
100
200
300
400
500
600
700
800
900
1000
S11
mag
0.767
0.813
0.841
0.861
0.882
0.902
0.923
0.912
0.923
0.923
ang
-135
-153
-161
-169
-175
180
174
170
164
161
S21
mag
22.646
10.116
5.623
3.548
2.820
2.093
1.365
1.096
0.902
0.724
ang
88
57
39
25
20
14
9
2
-3
-4
S12
mag
0.0155
0.0099
0.0076
0.0130
0.0210
0.0285
0.0376
0.0457
0.0484
0.0596
ang
9
4
49
79
78
78
77
66
66
64
S22
mag
0.531
0.692
0.794
0.841
0.875
0.910
0.944
0.944
0.933
0.944
ang
-103
-131
-143
-151
-156
-161
-166
-170
-176
-177
ZL
W
13.8 - j22.2
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Prelim. 6/00