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TetraFET
D1008UK
MECHANICAL DATA
B
(2 pls)
E
A
C2
1
3
54
G (4 pls)
F
K
D
PIN 1
PIN 3
PIN 5
HJ
I
DK
SOURCE (COMMON) PIN 2
DRAIN 2
GATE 1
PIN 4
MN
DRAIN 1
GATE 2
DIM mm
A 6.45
B 1.65R
C 45°
D 16.51
E 6.47
F 18.41
G 1.52
H 4.82
I 24.76
J 1.52
K 0.81R
M 0.13
N 2.16
Tol. Inches Tol.
0.13 0.254 0.005
0.13 0.065R 0.005
5° 45° 5°
0.76 0.650 0.03
0.13 0.255 0.005
0.13 0.725 0.005
0.13 0.060 0.005
0.25 0.190 0.010
0.13 0.975 0.005
0.13 0.060 0.005
0.13 0.032R 0.005
0.02 0.005 0.001
0.13 0.085 0.005
METAL GATE RF SILICON FET
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
80W – 28V – 500MHz
PUSH–PULL
FEATURES
• SIMPLIFIED AMPLIFIER DESIGN
• SUITABLE FOR BROAD BAND APPLICATIONS
• LOW Crss
• SIMPLE BIAS CIRCUITS
• LOW NOISE
• HIGH GAIN – 13 dB MINIMUM
APPLICATIONS
HF/VHF/UHF COMMUNICATIONS
from 1 MHz to 500 MHz
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
PD Power Dissipation
175W
BVDSS
Drain – Source Breakdown Voltage *
70V
BVGSS
Gate – Source Breakdown Voltage *
±20V
ID(sat)
Drain Current *
10A
Tstg Storage Temperature
–65 to 150°C
Tj Maximum Operating Junction Temperature
200°C
* Per Side
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
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D1008UK
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
Parameter
Test Conditions
Min.
Drain–Source
BVDSS Breakdown Voltage
PER SIDE
VGS = 0
ID = 100mA
70
IDSS
Zero Gate Voltage
Drain Current
VDS = 28V
VGS = 0
IGSS Gate Leakage Current
VGS(th) Gate Threshold Voltage *
gfs Forward Transconductance *
GPS
η
Common Source Power Gain
Drain Efficiency
VSWR Load Mismatch Tolerance
VGS = 20V
VDS = 0
ID = 10mA
VDS = VGS
VDS = 10V
ID = 2A
TOTAL DEVICE
PO = 80W
VDS = 28V
IDQ = 0.4A
f = 400MHz
1
1.6
13
50
20:1
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS = 28V
VDS = 28V
VDS = 28V
PER SIDE
VGS = –5V
VGS = 0
VGS = 0
f = 1MHz
f = 1MHz
f = 1MHz
Typ.
Max. Unit
V
2 mA
1 µA
7V
S
dB
%
120 pF
60 pF
5 pF
* Pulse Test: Pulse Duration = 300 µs , Duty Cycle 2%
HAZARDOUS MATERIAL WARNING
The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly
toxic and care must be taken during handling and mounting to avoid damage to this area.
THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE.
THERMAL DATA
RTHj–case
Thermal Resistance Junction – Case
Max. 1.0°C / W
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
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D1008UK
125 100
100 80
Pout 75
W 50
25
f1 = 400MHz
Idq = 0.4A
VDS = 28V
60
Drain
Efficiency
40 %
20
00
0 4 8 12 16 20
Pin W
Pout
Drain Efficiency
Figure 1 – Power Output and Efficiency
vs. Power Input.
-15
-20
-25
IMD3 -30
dBc
-35
-40
-45
-50
0
f1 = 400.0MHz
f2 = 400.1MHz
VDS = 28V
IDQ = 0.8A
20 40
Pout W PEP
60
80
Figure 3 – IMD vs. Output Power.
125 17
100
Pout 75
W 50
f1 = 400.0MHz
Idq = 0.4A
VDS = 28V
15
13
Gain
11 dB
25 9
07
0 4 8 12 16 20
Pin W
Pout
Gain
Figure 2 – Power Output & Gain
vs. Power Input.
D1008UK
OPTIMUM SOURCE AND LOAD IMPEDANCE
Frequency
MHz
ZS
ZL
400 1.5 + j0.2 5.0 + j2.0
Typical S Parameters
! Vds=28V, Idq=1A
# MHz S MA R 50
!Freq
MHz
100
200
300
400
500
600
700
800
900
1000
S11
mag
0.794
0.881
0.923
0.923
0.937
0.952
0.966
0.966
0.977
0.966
ang
-158
-167
-171
-176
-179
177
174
171
167
165
S21
mag
14.622
5.821
3.02
1.82
1.439
1.057
0.676
0.543
0.447
0.359
S12
ang mag
69 0.0115
42 0.0061
28 0.0068
18 0.117
15 0.0168
13 0.0234
10 0.0285
5 0.0335
1 0.0394
1 0.0432
S22
ang mag ang
-7 0.61 -145
3 0.794 -156
60 0.871 -162
77 0.902 -167
76 0.923 -169
75 0.945 -171
74 0.966 -174
69 0.955 -177
64 0.966 178
64 0.955 178
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
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