D1010UK.pdf 데이터시트 (총 5 페이지) - 파일 다운로드 D1010UK 데이타시트 다운로드

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TetraFET
D1010UK
MECHANICAL DATA
C
(2 pls)
HD
1
B
2
3
54
E
(4 pls)
F
I
G
(typ)
P
(2 pls) A
PIN 1
PIN 3
PIN 5
NM
O
DR
SOURCE (COMMON)
DRAIN 2
GATE 1
JK
PIN 2
PIN 4
DRAIN 1
GATE 2
DIM Millimetres Tol.
A 19.05 0.50
B 10.77 0.13
C 45°
D 9.78 0.13
E 5.71 0.13
F 27.94 0.13
G 1.52R 0.13
H 10.16 0.13
I 22.22 MAX
J 0.13 0.02
K 2.72 0.13
M 1.70 0.13
N 5.08 0.50
O 34.03 0.13
P 1.57R 0.08
Inches
0.75
0.424
45°
0.385
0.225
1.100
0.060R
0.400
0.875
0.005
0.107
0.067
0.200
1.340
0.062R
Tol.
0.020
0.005
0.005
0.005
0.005
0.005
0.005
MAX
0.001
0.005
0.005
0.020
0.005
0.003
METAL GATE RF SILICON FET
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
125W – 28V – 500MHz
PUSH–PULL
FEATURES
• SIMPLIFIED AMPLIFIER DESIGN
• SUITABLE FOR BROAD BAND APPLICATIONS
• LOW Crss
• SIMPLE BIAS CIRCUITS
• LOW NOISE
• HIGH GAIN – 10 dB MINIMUM
APPLICATIONS
HF/VHF/UHF COMMUNICATIONS
from 1 MHz to 400 MHz
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
PD Power Dissipation
350W
BVDSS
Drain – Source Breakdown Voltage *
70V
BVGSS
Gate – Source Breakdown Voltage *
±20V
ID(sat)
Drain Current *
20A
Tstg Storage Temperature
–65 to 150°C
Tj Maximum Operating Junction Temperature
200°C
* Per Side
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Prelim. 01/01

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D1010UK
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
Parameter
Test Conditions
Min.
BVDSS
DrainSource Breakdown
Voltage
PER SIDE
VGS = 0
ID = 100mA
70
IDSS
Zero Gate Voltage
Drain Current
VDS = 28V
VGS = 0
IGSS
VGS(th)
gfs
GPS
h
VSWR
Gate Leakage Current
Gate Threshold Voltage*
Forward Transconductance*
TOTAL D
Common Source Power Gain
Drain Efficiency
Load Mismatch Tolerance
VGS = 20V
ID = 10mA
VDS = 10V
PO = 125W
VDS = 28V
f = 400MHz
VDS = 0
VDS = VGS
ID = 5A
IDQ = 2A
1
3.2
10
50
20:1
Ciss
Coss
Crss
Input Capacitance
VDS = 0
Output Capacitance
VDS = 28V
Reverse Transfer Capacitance VDS = 28V
PER SIDE
VGS = 5V
VGS = 0
VGS = 0
f = 1MHz
f = 1MHz
f = 1MHz
* Pulse Test: Pulse Duration = 300 ms , Duty Cycle £ 2%
Typ.
Max. Unit
V
4 mA
1 mA
7V
S
dB
%
240 pF
120 pF
10 pF
HAZARDOUS MATERIAL WARNING
The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly
toxic and care must be taken during handling and mounting to avoid damage to this area.
THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE.
THERMAL DATA
RTHjcase
Thermal Resistance Junction Case
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Max. 0.5°C / W
Prelim. 01/01

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D1010UK
180
160
140
120
Pout 100
W 80
60
40
20
0
0
90
80
70
60
50 Efficiency
Vds = 28V
Idq = 2A
f =400MHz
40 %
30
20
10
0
5 10 15 20
Pin W
Pout
Drain Efficiency
Figure 1 Power Output and Efficiency
vs. Power Input.
180
160
140
120
Pout 100
W 80
60
40
20
0
0
Vds = 28V
Idq = 2A
f =400MHz
5 10
Pin W
15
Pout
Gain
17
16
15
14
13 Gain
12 dB
11
10
9
8
20
Figure 2 Power Output & Gain
vs. Power Input.
0
-10
IMD3 -20
dBc
-30
f1 = 400 MHz
f2 = 400.1MHz
Idq= 2A
Vds = 28V
-40
-50
0
20 40 60 80 100 120 140 160 180
Pout W PEP
Figure 3 IMD vs. Output Power.
D1010UK
OPTIMUM SOURCE AND LOAD IMPEDANCE
Frequency
MHz
ZWS
ZWL
400 1.7 + j0.1 2.7 + j1
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Prelim. 01/01