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TetraFET
D1021UK
MECHANICAL DATA
B
(2 pls)
E
A
C2
1
3
54
G (4 pls)
F
K
D
PIN 1
PIN 3
PIN 5
HJ
I
DK
SOURCE (COMMON) PIN 2
DRAIN 2
GATE 1
PIN 4
MN
DRAIN 1
GATE 2
DIM mm
A 6.45
B 1.65R
C 45°
D 16.51
E 6.47
F 18.41
G 1.52
H 4.82
I 24.76
J 1.52
K 0.81R
M 0.13
N 2.16
Tol. Inches Tol.
0.13 0.254 0.005
0.13 0.065R 0.005
5° 45° 5°
0.76 0.650 0.03
0.13 0.255 0.005
0.13 0.725 0.005
0.13 0.060 0.005
0.25 0.190 0.010
0.13 0.975 0.005
0.13 0.060 0.005
0.13 0.032R 0.005
0.02 0.005 0.001
0.13 0.085 0.005
METAL GATE RF SILICON FET
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
125W – 28V – 400MHz
PUSH–PULL
FEATURES
• SIMPLIFIED AMPLIFIER DESIGN
• SUITABLE FOR BROAD BAND APPLICATIONS
• LOW Crss
• SIMPLE BIAS CIRCUITS
• LOW NOISE
• HIGH GAIN – 13 dB MINIMUM
APPLICATIONS
HF/VHF/UHF COMMUNICATIONS
from 1 MHz to 400 MHz
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
PD Power Dissipation
350W
BVDSS
Drain – Source Breakdown Voltage *
70V
BVGSS
Gate – Source Breakdown Voltage *
±20V
ID(sat)
Drain Current *
20A
Tstg Storage Temperature
–65 to 150°C
Tj Maximum Operating Junction Temperature
200°C
* Per Side
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Prelim. 11/00

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D1021UK
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
Parameter
Test Conditions
Min.
DrainSource
BVDSS Breakdown Voltage
PER SIDE
VGS = 0
ID = 100mA
70
IDSS
Zero Gate Voltage
Drain Current
VDS = 28V
VGS = 0
IGSS Gate Leakage Current
VGS(th) Gate Threshold Voltage *
gfs Forward Transconductance *
GPS
h
Common Source Power Gain
Drain Efficiency
VSWR Load Mismatch Tolerance
VGS = 20V
VDS = 0
ID = 10mA
VDS = VGS
VDS = 10V
ID = 4A
TOTAL DEVICE
PO = 125W
VDS = 28V
IDQ = 1.6A
f = 400MHz
1
3.2
13
50
20:1
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
PER SIDE
VDS = 28V VGS = 5V f = 1MHz
VDS = 28V VGS = 0 f = 1MHz
VDS = 28V VGS = 0 f = 1MHz
Typ.
Max. Unit
V
4 mA
1 mA
7V
S
dB
%
240 pF
120 pF
10 pF
* Pulse Test: Pulse Duration = 300 ms , Duty Cycle £ 2%
HAZARDOUS MATERIAL WARNING
The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly
toxic and care must be taken during handling and mounting to avoid damage to this area.
THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE.
THERMAL DATA
RTHjcase
Thermal Resistance Junction Case
Max. 0.5°C / W
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Prelim. 11/00

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D1021UK




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Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Prelim. 11/00

No Preview Available !

D1021UK
 





 
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Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Prelim. 11/00

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D1021UK
G a te -B ia s
2 -1 8 p F
T1
620pF
1 -3 .5 p F
620pF
100K
22K
T2
T3
+28V
6x4mm
c o n ta c t
pad
D 1021U K
6x4mm
c o n ta c t p a d
27pF
1 0 p F 2 -1 8 p F
1 .5 K 1 0 0 u F
6"
6#
15
L2
100nF
680pF
L1
620pF
T6
620pF
2 -1 8 p F
6x4mm
c o n ta c t
pad
6 x 4m m
c o n ta c t p a d
D 1021U K
400MHz Test Fixture
T1 11cm 50 Ohm UT47 semi-rigid coax on Siemens B62152A1X1 2 hole ferrite core
T2,3,4,5 9cm 15 Ohm UT85-15 semi-rigid coax
T6 9.7cm 50 Ohm UT85 semi-rigid coax
L1 7 Turns 19swg enamelled copper wire 3.5mm internal diameter
L2 5.5 Turns 19swg enamelled copper wire on Fair-rite FT50 ferrite core
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Prelim. 11/00