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SEME
LAB
MECHANICAL DATA
Dimensions in mm (inches)
4
TO–263 PACKAGE
PIN 1 – GATE
PIN 2 – DRAIN
PIN 3 – SOURCE
PIN 4 – DRAIN
TetraFET
D1083UK
METAL GATE RF SILICON FET
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
4W – 28V – 200MHz
SINGLE ENDED
FEATURES
• SIMPLIFIED AMPLIFIER DESIGN
• SUITABLE FOR BROAD BAND
APPLICATIONS
• LOW Crss
• SIMPLE BIAS CIRCUITS
• LOW NOISE
• HIGH GAIN – 13dB MINIMUM
• SURFACE MOUNT
APPLICATIONS
LOW COST DC to 200 MHz
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated)
PD Power Dissipation
62.5W
BVDSS
Drain – Source Breakdown Voltage
70V
BVGSS
Gate – Source Breakdown Voltage
±20V
ID(sat)
Drain Current
5A
TSTG
Storage Temperature
–65 to 125°C
TJ Maximum Operating Junction Temperature
150°C
Semelab plc. Telephone (01455) 556565. Fax (01455) 552612. Email rf@semelab.co.uk
Prelim. 7/96

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SEME
LAB
D1083UK
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise stated)
Parameter
Test Conditions
Drain–Source
BVDSS Breakdown Voltage
VGS = 0
ID = 10mA
IDSS
Zero Gate Voltage
Drain Current
VDS = 28V
VGS = 0
IGSS Gate Leakage Current
VGS(th) Gate Threshold Voltage*
gfs Forward Transconductance*
GPS Common Source Power Gain
η Drain Efficiency
VSWR Load Mismatch Tolerance
VGS = 20V
ID = 10mA
VDS = 10V
VDS = 28V
PO = 4W
VDS = 0
VDS = VGS
ID = 1A
IDQ = 0.1A
f = 200MHz
Ciss Input Capacitance
VDS = 0V VGS = –5V f = 1MHz
Coss Output Capacitance
VDS = 28V VGS = 0 f = 1MHz
Crss Reverse Transfer Capacitance VDS = 28V VGS = 0 f = 1MHz
* Pulse Test: Pulse Duration = 300 µs , Duty Cycle 2%
THERMAL DATA
RTHj–case
Thermal Resistance Junction – Case
Min.
70
1
0.8
13
40
20:1
Typ.
Max. Unit
V
1 mA
1 µA
7V
S
dB
%
60
30 pF
2.5
Max. 2°C / W
Semelab plc. Telephone (01455) 556565. Fax (01455) 552612. Email rf@semelab.co.uk
Prelim. 7/96