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TetraFET
D1207UK
MECHANICAL DATA
AD
B
H
23
1
54
F
C
G
E
METAL GATE RF SILICON FET
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
20W – 12.5V – 1GHz
PUSH–PULL
I
PIN 1
PIN 3
PIN 5
NM
O
DQ
SOURCE (COMMON) PIN 2
DRAIN 2
PIN 4
GATE 1
JK
DRAIN 1
GATE 2
DIM mm
A 16.38
B 1.52
C 45°
D 6.35
E 3.30
F 14.22
G 1.27 x 45°
H 1.52
I 6.35
J 0.13
K 2.16
M 1.52
N 5.08
O 18.90
Tol.
0.26
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.02
0.13
0.13
MAX
0.13
Inches
0.645
0.060
45°
0.250
0.130
0.560
0.05 x 45°
0.060
0.250
0.005
0.085
0.060
0.200
0.744
Tol.
0.010
0.005
0.005
0.005
0.005
0.005
0.005
0.005
0.001
0.005
0.005
MAX
0.005
FEATURES
• SIMPLIFIED AMPLIFIER DESIGN
• SUITABLE FOR BROAD BAND APPLICATIONS
• VERY LOW Crss
• SIMPLE BIAS CIRCUITS
• LOW NOISE
• HIGH GAIN – 10 dB MINIMUM
APPLICATIONS
HF/VHF/UHF COMMUNICATIONS
from 1 MHz to 500 MHz
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
PD Power Dissipation
175W
BVDSS
Drain – Source Breakdown Voltage *
40V
BVGSS
Gate – Source Breakdown Voltage *
±20V
ID(sat)
Drain Current *
10A
Tstg Storage Temperature
–65 to 150°C
Tj Maximum Operating Junction Temperature
200°C
* Per Side
Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 10/95

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D1207UK
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
Parameter
Test Conditions
Min.
BVDSS
Drain–Source Breakdown
Voltage
PER SIDE
VGS = 0
ID = 10mA
40
IDSS
Zero Gate Voltage
Drain Current
VDS = 12.5V
VGS = 0
IGSS
VGS(th)
gfs
Gate Leakage Current
Gate Threshold Voltage*
Forward Transconductance*
VGS = 20V
ID = 10mA
VDS = 10V
VDS = 0
VDS = VGS
ID = 1A
1
0.8
GPS
η
VSWR
Common Source Power Gain
Drain Efficiency
Load Mismatch Tolerance
TOTAL DEVICE
PO = 20W
VDS = 12.5V
IDQ = 0.8A
f = 400MHz
10
50
20:1
Ciss
Coss
Crss
PER SIDE
Input Capacitance
VDS = 0
VGS = –5V f = 1MHz
Output Capacitance
VDS = 12.5V VGS = 0 f = 1MHz
Reverse Transfer Capacitance VDS = 12.5V VGS = 0 f = 1MHz
* Pulse Test: Pulse Duration = 300 µs , Duty Cycle 2%
Typ.
Max. Unit
V
1 mA
1 µA
7V
S
dB
%
60 pF
40 pF
4 pF
HAZARDOUS MATERIAL WARNING
The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly
toxic and care must be taken during handling and mounting to avoid damage to this area.
THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE.
THERMAL DATA
RTHj–case
Thermal Resistance Junction – Case
Max. 1.75°C / W
Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 10/95